JPS6184867A - Ｉｇｆｅｔの製造方法 - Google Patents

Ｉｇｆｅｔの製造方法

Info

Publication number
JPS6184867A
JPS6184867A JP60214398A JP21439885A JPS6184867A JP S6184867 A JPS6184867 A JP S6184867A JP 60214398 A JP60214398 A JP 60214398A JP 21439885 A JP21439885 A JP 21439885A JP S6184867 A JPS6184867 A JP S6184867A
Authority
JP
Japan
Prior art keywords
substrate
region
source
junction
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60214398A
Other languages
English (en)
Japanese (ja)
Inventor
ロレンス　アラン　グツドマン
ジヨン　パトリツク　ラツセル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS6184867A publication Critical patent/JPS6184867A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP60214398A 1984-09-27 1985-09-26 Ｉｇｆｅｔの製造方法 Pending JPS6184867A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65510984A 1984-09-27 1984-09-27
US655109 1996-05-29

Publications (1)

Publication Number Publication Date
JPS6184867A true JPS6184867A (ja) 1986-04-30

Family

ID=24627549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60214398A Pending JPS6184867A (ja) 1984-09-27 1985-09-26 Ｉｇｆｅｔの製造方法

Country Status (4)

Country Link
JP (1) JPS6184867A (fr)
DE (1) DE3533808A1 (fr)
FR (1) FR2570880A1 (fr)
GB (1) GB2165091B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01181571A (ja) * 1988-01-11 1989-07-19 Nippon Denso Co Ltd 導電変調型ｍｏｓｆｅｔ
JPH01235277A (ja) * 1988-03-15 1989-09-20 Nec Corp 縦型電界効果トランジスタ

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2193597A (en) * 1986-08-08 1988-02-10 Philips Electronic Associated Method of manufacturing a vertical DMOS transistor
JPS63302535A (ja) * 1987-06-03 1988-12-09 Mitsubishi Electric Corp ガリウム砒素集積回路
JP2510710B2 (ja) * 1988-12-13 1996-06-26 三菱電機株式会社 絶縁体基板上の半導体層に形成されたｍｏｓ型電界効果トランジスタ
KR20100135521A (ko) * 2009-06-17 2010-12-27 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
CN106206300A (zh) * 2015-04-29 2016-12-07 北大方正集团有限公司 垂直双扩散金属-氧化物半导体场效应晶体管及加工方法
CN109817707A (zh) * 2019-01-15 2019-05-28 上海华虹宏力半导体制造有限公司 Rc-igbt结构及其制造方法
FI131276B1 (en) * 2023-07-17 2025-01-22 Kyocera Tech Oy IMPLEMENTATIONS TO SILICON
CN117238969A (zh) * 2023-11-13 2023-12-15 深圳基本半导体有限公司 碳化硅mosfet器件及其制备方法与应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363983A (en) * 1976-11-19 1978-06-07 Toshiba Corp Semiconductor device
JPS543480A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device
DE2930780C2 (de) * 1979-07-28 1982-05-27 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur Herstellung eines VMOS-Transistors
DE3240162C2 (de) * 1982-01-04 1996-08-01 Gen Electric Verfahren zum Herstellen eines doppelt-diffundierten Leistungs-MOSFET mit Source-Basis-Kurzschluß
US4503598A (en) * 1982-05-20 1985-03-12 Fairchild Camera & Instrument Corporation Method of fabricating power MOSFET structure utilizing self-aligned diffusion and etching techniques
JPS5957477A (ja) * 1982-09-27 1984-04-03 Fujitsu Ltd 半導体装置
CA1216968A (fr) * 1983-09-06 1987-01-20 Victor A.K. Temple Dispositif a semiconducteur a grille isolee a court-circuit base-source ameliore et methode de fabrication de ce court-circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01181571A (ja) * 1988-01-11 1989-07-19 Nippon Denso Co Ltd 導電変調型ｍｏｓｆｅｔ
JPH01235277A (ja) * 1988-03-15 1989-09-20 Nec Corp 縦型電界効果トランジスタ

Also Published As

Publication number Publication date
DE3533808A1 (de) 1986-04-03
GB2165091A (en) 1986-04-03
GB2165091B (en) 1988-04-20
FR2570880A1 (fr) 1986-03-28
GB8523651D0 (en) 1985-10-30

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