JPS62129070U - - Google Patents
Info
- Publication number
- JPS62129070U JPS62129070U JP1766086U JP1766086U JPS62129070U JP S62129070 U JPS62129070 U JP S62129070U JP 1766086 U JP1766086 U JP 1766086U JP 1766086 U JP1766086 U JP 1766086U JP S62129070 U JPS62129070 U JP S62129070U
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- vapor phase
- phase growth
- growth apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 2
- 239000002994 raw material Substances 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の一実施例を示す説明図、第２
図は従来の気相成長装置の一例の構成を示す説明
図である。 １…反応管、２…Ｇａソース、３…基板ホルダ
、４…基板、５…ソース反応室、６…ヒータ、７
…ガス導入口、８…ガス排出口、９…バツフル、
１０…管、１１…ガス吹出し口。
図は従来の気相成長装置の一例の構成を示す説明
図である。 １…反応管、２…Ｇａソース、３…基板ホルダ
、４…基板、５…ソース反応室、６…ヒータ、７
…ガス導入口、８…ガス排出口、９…バツフル、
１０…管、１１…ガス吹出し口。
Claims (1)
- 反応管内で、ソース材料と原料ガスを反応させ
、生成された生成ガスよりなる混合ガスを基板上
に導き、該基板上にエピタキシヤル膜を成長させ
る気相成長装置において、前記原料ガスを前記ソ
ース材料表面上に均一な分布に吹きつけるための
複数個のガス吹出し口を有する管を備えたことを
特徴とする気相成長装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1766086U JPS62129070U (ja) | 1986-02-10 | 1986-02-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1766086U JPS62129070U (ja) | 1986-02-10 | 1986-02-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62129070U true JPS62129070U (ja) | 1987-08-15 |
Family
ID=30810620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1766086U Pending JPS62129070U (ja) | 1986-02-10 | 1986-02-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62129070U (ja) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5488071A (en) * | 1977-12-26 | 1979-07-12 | Fujitsu Ltd | Vapor-phase growth method of compound semiconductor |
-
1986
- 1986-02-10 JP JP1766086U patent/JPS62129070U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5488071A (en) * | 1977-12-26 | 1979-07-12 | Fujitsu Ltd | Vapor-phase growth method of compound semiconductor |
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