JPH0210470U - - Google Patents
Info
- Publication number
- JPH0210470U JPH0210470U JP8426588U JP8426588U JPH0210470U JP H0210470 U JPH0210470 U JP H0210470U JP 8426588 U JP8426588 U JP 8426588U JP 8426588 U JP8426588 U JP 8426588U JP H0210470 U JPH0210470 U JP H0210470U
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- gas
- tube
- growth
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012808 vapor phase Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の一実施例を示す断面図、第２
図は従来装置を示す断面図である。 １…反応管、２…加熱炉、３，４…成長室、５
，６…原料ソース、７，８…原料ガス導入管、９
…基板保持治具、１０…基板、１１…内管。
図は従来装置を示す断面図である。 １…反応管、２…加熱炉、３，４…成長室、５
，６…原料ソース、７，８…原料ガス導入管、９
…基板保持治具、１０…基板、１１…内管。
Claims (1)
- 気相エピタキシアル成長装置において、反応後
のガスが通る成長室下流側の反応管の内周に、反
応後のガスから該反応管を隔離させる内管を設置
したことを特徴とする気相エピタキシアル成長装
置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8426588U JPH0210470U (ja) | 1988-06-25 | 1988-06-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8426588U JPH0210470U (ja) | 1988-06-25 | 1988-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0210470U true JPH0210470U (ja) | 1990-01-23 |
Family
ID=31308962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8426588U Pending JPH0210470U (ja) | 1988-06-25 | 1988-06-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0210470U (ja) |
-
1988
- 1988-06-25 JP JP8426588U patent/JPH0210470U/ja active Pending