JPS62165317A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS62165317A
JPS62165317A JP626186A JP626186A JPS62165317A JP S62165317 A JPS62165317 A JP S62165317A JP 626186 A JP626186 A JP 626186A JP 626186 A JP626186 A JP 626186A JP S62165317 A JPS62165317 A JP S62165317A
Authority
JP
Japan
Prior art keywords
layer
single crystal
substrate
gallium arsenide
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP626186A
Other languages
English (en)
Japanese (ja)
Other versions
JPH022285B2 (2
Inventor
Junji Saito
淳二 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP626186A priority Critical patent/JPS62165317A/ja
Publication of JPS62165317A publication Critical patent/JPS62165317A/ja
Publication of JPH022285B2 publication Critical patent/JPH022285B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP626186A 1986-01-17 1986-01-17 半導体装置の製造方法 Granted JPS62165317A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP626186A JPS62165317A (ja) 1986-01-17 1986-01-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP626186A JPS62165317A (ja) 1986-01-17 1986-01-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS62165317A true JPS62165317A (ja) 1987-07-21
JPH022285B2 JPH022285B2 (2) 1990-01-17

Family

ID=11633519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP626186A Granted JPS62165317A (ja) 1986-01-17 1986-01-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS62165317A (2)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01161874A (ja) * 1987-12-18 1989-06-26 Hitachi Ltd 半導体装置とその製造方法
JPH0412091A (ja) * 1990-04-26 1992-01-16 Nikko Kyodo Co Ltd 半導体結晶のエピタキシャル成長方法
CN102299175A (zh) * 2011-08-29 2011-12-28 中国电子科技集团公司第十三研究所 InAlN/GaN异质结有源区的埋层结构和激活方法
CN102856373A (zh) * 2012-09-29 2013-01-02 电子科技大学 高电子迁移率晶体管

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01161874A (ja) * 1987-12-18 1989-06-26 Hitachi Ltd 半導体装置とその製造方法
JPH0412091A (ja) * 1990-04-26 1992-01-16 Nikko Kyodo Co Ltd 半導体結晶のエピタキシャル成長方法
CN102299175A (zh) * 2011-08-29 2011-12-28 中国电子科技集团公司第十三研究所 InAlN/GaN异质结有源区的埋层结构和激活方法
CN102856373A (zh) * 2012-09-29 2013-01-02 电子科技大学 高电子迁移率晶体管

Also Published As

Publication number Publication date
JPH022285B2 (2) 1990-01-17

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Legal Events

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