JPS6234427U - - Google Patents
Info
- Publication number
- JPS6234427U JPS6234427U JP1985125538U JP12553885U JPS6234427U JP S6234427 U JPS6234427 U JP S6234427U JP 1985125538 U JP1985125538 U JP 1985125538U JP 12553885 U JP12553885 U JP 12553885U JP S6234427 U JPS6234427 U JP S6234427U
- Authority
- JP
- Japan
- Prior art keywords
- depth
- semiconductor substrate
- wet etching
- pattern
- alignment mark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims 2
- 238000001312 dry etching Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第１図ａ，ｂ，ｃは本考案の実施例を断面構造
を示したもので第２図ａ，ｂ、第３図は従来の目
合わせパターンを使用した場合のイオン注入用マ
スク形成法を示したものである。第４図ａ，ｂ，
ｃは、目合わせマーク部分の本考案の実施例（第
４図ｂ）と従来例（第４図ａ，ｃ）の比較を示し
た断面図である。
これらの図において１は半導体基板、２は目合
わせマーク、３は金属（Ａｕ）層、４は素子部、
５はＰＲマスクパターン、６は金属（Ａｕ）除去
部、７は金属（Ａｕ）マスク部である。
Figures 1a, b, and c show the cross-sectional structure of an embodiment of the present invention, and Figures 2a, b, and 3 show a method for forming an ion implantation mask using a conventional alignment pattern. This is what is shown. Figure 4 a, b,
4c is a sectional view showing a comparison of the alignment mark portion of the embodiment of the present invention (FIG. 4b) and the conventional example (FIGS. 4a and 4c). In these figures, 1 is a semiconductor substrate, 2 is an alignment mark, 3 is a metal (Au) layer, 4 is an element part,
5 is a PR mask pattern, 6 is a metal (Au) removed portion, and 7 is a metal (Au) mask portion.
Claims (1)
金属パターンをウエツトエツチングあるいはドラ
イエツチングによつて所望の位置に形成する工程
において用いる目合わせマークを、前記半導体基
板表面にウエツトエツチングにより深さ５０００
ű１０００Åに堀り込まれたパターンから形成
することを特徴とする半導体プロセス用目合せマ
ーク。 Alignment marks used in the process of forming a metal pattern with a thickness of 1 μm to 2 μm at a desired position on the surface of a semiconductor substrate by wet etching or dry etching are etched to a depth of 5000 mm on the surface of the semiconductor substrate by wet etching.
An alignment mark for semiconductor processing, characterized in that it is formed from a pattern drilled to a depth of ű1000 Å.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985125538U JPH0322903Y2 (en) | 1985-08-15 | 1985-08-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985125538U JPH0322903Y2 (en) | 1985-08-15 | 1985-08-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6234427U true JPS6234427U (en) | 1987-02-28 |
| JPH0322903Y2 JPH0322903Y2 (en) | 1991-05-20 |
Family
ID=31018519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985125538U Expired JPH0322903Y2 (en) | 1985-08-15 | 1985-08-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0322903Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817605A (en) * | 2018-05-29 | 2019-05-28 | 苏州能讯高能半导体有限公司 | Semiconductor device and method of making the same |
-
1985
- 1985-08-15 JP JP1985125538U patent/JPH0322903Y2/ja not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817605A (en) * | 2018-05-29 | 2019-05-28 | 苏州能讯高能半导体有限公司 | Semiconductor device and method of making the same |
| CN109817605B (en) * | 2018-05-29 | 2025-02-28 | 苏州能讯高能半导体有限公司 | Semiconductor device and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0322903Y2 (en) | 1991-05-20 |
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