JPS6234427U - - Google Patents

Info

Publication number
JPS6234427U
JPS6234427U JP1985125538U JP12553885U JPS6234427U JP S6234427 U JPS6234427 U JP S6234427U JP 1985125538 U JP1985125538 U JP 1985125538U JP 12553885 U JP12553885 U JP 12553885U JP S6234427 U JPS6234427 U JP S6234427U
Authority
JP
Japan
Prior art keywords
depth
semiconductor substrate
wet etching
pattern
alignment mark
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1985125538U
Other languages
English (en)
Other versions
JPH0322903Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985125538U priority Critical patent/JPH0322903Y2/ja
Publication of JPS6234427U publication Critical patent/JPS6234427U/ja
Application granted granted Critical
Publication of JPH0322903Y2 publication Critical patent/JPH0322903Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

【図面の簡単な説明】
第１図ａ，ｂ，ｃは本考案の実施例を断面構造
を示したもので第２図ａ，ｂ、第３図は従来の目
合わせパターンを使用した場合のイオン注入用マ
スク形成法を示したものである。第４図ａ，ｂ，
ｃは、目合わせマーク部分の本考案の実施例（第
４図ｂ）と従来例（第４図ａ，ｃ）の比較を示し
た断面図である。 これらの図において１は半導体基板、２は目合
わせマーク、３は金属（Ａｕ）層、４は素子部、
５はＰＲマスクパターン、６は金属（Ａｕ）除去
部、７は金属（Ａｕ）マスク部である。

Claims (1)

    【実用新案登録請求の範囲】
  1. 半導体基板表面上に１μｍから２μｍの厚さの
    金属パターンをウエツトエツチングあるいはドラ
    イエツチングによつて所望の位置に形成する工程
    において用いる目合わせマークを、前記半導体基
    板表面にウエツトエツチングにより深さ５０００
    ű１０００Åに堀り込まれたパターンから形成
    することを特徴とする半導体プロセス用目合せマ
    ーク。
JP1985125538U 1985-08-15 1985-08-15 Expired JPH0322903Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985125538U JPH0322903Y2 (ja) 1985-08-15 1985-08-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985125538U JPH0322903Y2 (ja) 1985-08-15 1985-08-15

Publications (2)

Publication Number Publication Date
JPS6234427U true JPS6234427U (ja) 1987-02-28
JPH0322903Y2 JPH0322903Y2 (ja) 1991-05-20

Family

ID=31018519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985125538U Expired JPH0322903Y2 (ja) 1985-08-15 1985-08-15

Country Status (1)

Country Link
JP (1) JPH0322903Y2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109817605A (zh) * 2018-05-29 2019-05-28 苏州能讯高能半导体有限公司 半导体器件及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109817605A (zh) * 2018-05-29 2019-05-28 苏州能讯高能半导体有限公司 半导体器件及其制备方法
CN109817605B (zh) * 2018-05-29 2025-02-28 苏州能讯高能半导体有限公司 半导体器件及其制备方法

Also Published As

Publication number Publication date
JPH0322903Y2 (ja) 1991-05-20

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