JPS627263B2 - - Google Patents
Info
- Publication number
- JPS627263B2 JPS627263B2 JP57119914A JP11991482A JPS627263B2 JP S627263 B2 JPS627263 B2 JP S627263B2 JP 57119914 A JP57119914 A JP 57119914A JP 11991482 A JP11991482 A JP 11991482A JP S627263 B2 JPS627263 B2 JP S627263B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- bias
- film
- nitride thin
- metal nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11991482A JPS5913608A (ja) | 1982-07-12 | 1982-07-12 | 金属窒化物薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11991482A JPS5913608A (ja) | 1982-07-12 | 1982-07-12 | 金属窒化物薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5913608A JPS5913608A (ja) | 1984-01-24 |
| JPS627263B2 true JPS627263B2 (de) | 1987-02-16 |
Family
ID=14773308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11991482A Granted JPS5913608A (ja) | 1982-07-12 | 1982-07-12 | 金属窒化物薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5913608A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6393861A (ja) * | 1986-10-06 | 1988-04-25 | Nec Corp | 低応力薄膜の堆積方法 |
| JP2602276B2 (ja) * | 1987-06-30 | 1997-04-23 | 株式会社日立製作所 | スパツタリング方法とその装置 |
| JPH089769B2 (ja) * | 1987-07-09 | 1996-01-31 | 松下電器産業株式会社 | 組成変調窒化合金膜の作製法 |
| JP4765001B2 (ja) * | 2005-06-22 | 2011-09-07 | 富士電機株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5938307B2 (ja) * | 1978-09-12 | 1984-09-14 | 富士通株式会社 | 金属化合物被膜の形成方法 |
-
1982
- 1982-07-12 JP JP11991482A patent/JPS5913608A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5913608A (ja) | 1984-01-24 |
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