JPS6322729U - - Google Patents

Info

Publication number
JPS6322729U
JPS6322729U JP11688486U JP11688486U JPS6322729U JP S6322729 U JPS6322729 U JP S6322729U JP 11688486 U JP11688486 U JP 11688486U JP 11688486 U JP11688486 U JP 11688486U JP S6322729 U JPS6322729 U JP S6322729U
Authority
JP
Japan
Prior art keywords
support substrate
counter electrode
reaction chamber
thin film
magnetic poles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11688486U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11688486U priority Critical patent/JPS6322729U/ja
Publication of JPS6322729U publication Critical patent/JPS6322729U/ja
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical Vapour Deposition (AREA)

Description

【図面の簡単な説明】
第１図は本考案プラズマＣＶＤ装置の一実施例
を示す模式図、第２図は本考案の要部である磁極
の配置状態を示す上面図、第３図は本考案に於け
る電子の移動を説明するための模式図、第４図は
４０cm×４０cm当りの磁極組数と薄膜の膜厚変動
幅との関係を示す曲線図、を夫々示している。 １……反応室、３・４……上部・下部対向電極
、５……支持基板、９Ｎ，９Ｓ……磁極。

Claims (1)

    【実用新案登録請求の範囲】
  1. 減圧し得る反応室、該反応室に導入された反応
    ガスを分解するためのプラズマを発生する対向電
    極、該対向電極間にあつて一方の対向電極に近接
    して設けられ上記反応ガスの分解により形成され
    る薄膜を支持する支持基板、該支持基板と離れた
    他方の対向電極の背部に少なくとも１００cm2当
    りに一組設けられた複数組の磁極、を備え、上記
    対向電極間の電界に対してほぼ直交する方向に磁
    界を供給することを特徴としたプラズマＣＶＤ装
    置。
JP11688486U 1986-07-30 1986-07-30 Pending JPS6322729U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11688486U JPS6322729U (ja) 1986-07-30 1986-07-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11688486U JPS6322729U (ja) 1986-07-30 1986-07-30

Publications (1)

Publication Number Publication Date
JPS6322729U true JPS6322729U (ja) 1988-02-15

Family

ID=31001891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11688486U Pending JPS6322729U (ja) 1986-07-30 1986-07-30

Country Status (1)

Country Link
JP (1) JPS6322729U (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56121629A (en) * 1980-02-29 1981-09-24 Canon Inc Film forming method
JPS58132920A (ja) * 1982-02-01 1983-08-08 Kanegafuchi Chem Ind Co Ltd アモルフアスシリコン系半導体の製造方法
JPS59161812A (ja) * 1983-03-07 1984-09-12 Hitachi Ltd プラズマｃｖｄ装置
JPS60234313A (ja) * 1984-05-07 1985-11-21 Hitachi Ltd プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56121629A (en) * 1980-02-29 1981-09-24 Canon Inc Film forming method
JPS58132920A (ja) * 1982-02-01 1983-08-08 Kanegafuchi Chem Ind Co Ltd アモルフアスシリコン系半導体の製造方法
JPS59161812A (ja) * 1983-03-07 1984-09-12 Hitachi Ltd プラズマｃｖｄ装置
JPS60234313A (ja) * 1984-05-07 1985-11-21 Hitachi Ltd プラズマ処理装置

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