JPS6361122U - - Google Patents

Info

Publication number
JPS6361122U
JPS6361122U JP15588186U JP15588186U JPS6361122U JP S6361122 U JPS6361122 U JP S6361122U JP 15588186 U JP15588186 U JP 15588186U JP 15588186 U JP15588186 U JP 15588186U JP S6361122 U JPS6361122 U JP S6361122U
Authority
JP
Japan
Prior art keywords
diffusion furnace
semiconductor manufacturing
inert gas
cover
loading mechanism
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15588186U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15588186U priority Critical patent/JPS6361122U/ja
Publication of JPS6361122U publication Critical patent/JPS6361122U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の一実施例を示す図であり第2
図は従来の半導体製造用拡散炉システムを示す図
である。 図において、6はボートパドル、7はウエハ、
10は拡散炉、11はカバー、12は不活性ガス
供給手段である。
FIG. 1 is a diagram showing an embodiment of the present invention, and FIG.
The figure shows a conventional diffusion furnace system for semiconductor manufacturing. In the figure, 6 is a boat paddle, 7 is a wafer,
10 is a diffusion furnace, 11 is a cover, and 12 is an inert gas supply means.

Claims (1)

【実用新案登録請求の範囲】 (1) ボートパドルに載せられたウエハをボート
ローデイング機構により拡散炉内に入れ、拡散炉
内でこのウエハの酸化または拡散を行なう半導体
製造用拡散炉システムにおいて、 前記拡散炉の入口と前記ボートローデイング機
構とを覆うカバーと、 前記カバー内に不活性ガスを供給する不活性ガ
ス供給手段と、 を備えたことを特徴とする半導体製造用拡散炉シ
ステム。 (2) 前記不活性ガスがNガスである実用新案
登録請求の範囲第1項記載の半導体製造用拡散炉
システム。
[Scope of Claim for Utility Model Registration] (1) In a diffusion furnace system for semiconductor manufacturing in which a wafer placed on a boat paddle is loaded into a diffusion furnace by a boat loading mechanism, and the wafer is oxidized or diffused in the diffusion furnace, A diffusion furnace system for semiconductor manufacturing, comprising: a cover that covers an inlet of the diffusion furnace and the boat loading mechanism; and an inert gas supply means that supplies inert gas into the cover. (2) The diffusion furnace system for semiconductor manufacturing according to claim 1, wherein the inert gas is N2 gas.
JP15588186U 1986-10-09 1986-10-09 Pending JPS6361122U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15588186U JPS6361122U (en) 1986-10-09 1986-10-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15588186U JPS6361122U (en) 1986-10-09 1986-10-09

Publications (1)

Publication Number Publication Date
JPS6361122U true JPS6361122U (en) 1988-04-22

Family

ID=31076983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15588186U Pending JPS6361122U (en) 1986-10-09 1986-10-09

Country Status (1)

Country Link
JP (1) JPS6361122U (en)

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