JPS6368228U - - Google Patents
Info
- Publication number
- JPS6368228U JPS6368228U JP16415786U JP16415786U JPS6368228U JP S6368228 U JPS6368228 U JP S6368228U JP 16415786 U JP16415786 U JP 16415786U JP 16415786 U JP16415786 U JP 16415786U JP S6368228 U JPS6368228 U JP S6368228U
- Authority
- JP
- Japan
- Prior art keywords
- enhancement type
- channel enhancement
- drive
- type mosfet
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000011084 recovery Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Electronic Switches (AREA)
Description
第１図はこの考案による半導体装置の一実施例
を示す回路図、第２図は第１図の動作説明に供す
るパルストランスの入、出力信号の波形図、第３
図および第４図は従来の半導体装置の例を示す回
路図である。
１……ｎチヤンネルエンハンスメント形パワー
ＭＯＳＦＥＴ、２，３……ドライブ用ｎチヤンネ
ルエンハンスメント形ＭＯＳＦＥＴ、５，６……
フアーストリカバリーダイオード。
FIG. 1 is a circuit diagram showing an embodiment of a semiconductor device according to this invention, FIG. 2 is a waveform diagram of input and output signals of a pulse transformer to explain the operation of FIG. 1, and FIG.
1 and 4 are circuit diagrams showing examples of conventional semiconductor devices. 1...N-channel enhancement type power MOSFET, 2, 3...N-channel enhancement type MOSFET for drive, 5, 6...
Fast recovery diode.
Claims (1)
ーＭＯＳＦＥＴのゲートに第１のドライブ用ｎチ
ヤンネルエンハンスメント形ＭＯＳＦＥＴのドレ
インと第２のドライブ用ｎチヤンネルエンハンス
メント形ＭＯＳＦＥＴのゲートを接続し、前記メ
インのｎチヤンネルエンハンスメント形パワーＭ
ＯＳＦＥＴのソースに前記第２のドライブ用ｎチ
ヤンネルエンハンスメント形ＭＯＳＦＥＴのドレ
インを接続し、前記第１のドライブ用ｎチヤンネ
ルエンハンスメント形ＭＯＳＦＥＴのゲートと前
記第２のドライブ用ｎチヤンネルエンハンスメン
ト形ＭＯＳＦＥＴのソースを接続し、かつ前記第
１および第２のドライブ用ｎチヤンネルエンハン
スメント形ＭＯＳＦＥＴのそれぞれのドレイン・
ソースに逆並列にフアーストリカバリーダイオー
ドを接続した構成を１ユニツトとして１ユニツト
または組み合わされた複数ユニツトをモールドパ
ツケージ内に収めたことを特徴とする半導体装置
。 The drain of the first drive n-channel enhancement type MOSFET and the gate of the second drive n-channel enhancement type MOSFET are connected to the gate of the main n-channel enhancement type power MOSFET, and the main n-channel enhancement type power M
The drain of the second drive n-channel enhancement type MOSFET is connected to the source of the OSFET, and the gate of the first drive n-channel enhancement type MOSFET is connected to the source of the second drive n-channel enhancement type MOSFET. and the respective drains of the first and second drive n-channel enhancement type MOSFETs.
A semiconductor device characterized in that one unit or a plurality of combined units are housed in a molded package, with a first recovery diode connected in antiparallel to a source as one unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16415786U JPS6368228U (en) | 1986-10-23 | 1986-10-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16415786U JPS6368228U (en) | 1986-10-23 | 1986-10-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6368228U true JPS6368228U (en) | 1988-05-09 |
Family
ID=31093015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16415786U Pending JPS6368228U (en) | 1986-10-23 | 1986-10-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6368228U (en) |
-
1986
- 1986-10-23 JP JP16415786U patent/JPS6368228U/ja active Pending