JPS6373355U - - Google Patents
Info
- Publication number
- JPS6373355U JPS6373355U JP16850586U JP16850586U JPS6373355U JP S6373355 U JPS6373355 U JP S6373355U JP 16850586 U JP16850586 U JP 16850586U JP 16850586 U JP16850586 U JP 16850586U JP S6373355 U JPS6373355 U JP S6373355U
- Authority
- JP
- Japan
- Prior art keywords
- bias voltage
- voltage application
- vacuum chamber
- ion plating
- application electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007733 ion plating Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims 4
- 238000001704 evaporation Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- 230000005284 excitation Effects 0.000 claims 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
第１図はイオンプレーテイング装置の模式断面
図であり、第２図は本考案の切り込み形状の直流
バイアス電圧印加電極の断面形状図であり、第３
図は第２図の平面形状（膜の付着面）図である。
第４図は本考案の突起形成直流バイアス電圧印加
電極の断面形状図で、第５図は第４図の平面形状
（膜の付着面）図である。
１，２…直流バイアス電圧印加電極、１１…溝
、２１…突起。
FIG. 1 is a schematic cross-sectional view of the ion plating apparatus, FIG. 2 is a cross-sectional view of the notch-shaped DC bias voltage application electrode of the present invention, and FIG.
This figure is a plan view of the planar shape (film attachment surface) of FIG. 2.
FIG. 4 is a cross-sectional view of the protrusion-forming DC bias voltage applying electrode of the present invention, and FIG. 5 is a plan view of the plan view (film attachment surface) of FIG. 4. 1, 2...DC bias voltage application electrode, 11...groove, 21...protrusion.
Claims (1)
空槽内で該蒸発源るつぼに対向する位置に設けら
れ、被成膜体を保持する基板ホルダと該被成膜体
基板の上部に設けた直流バイアス電圧印加電極と
、該蒸発源るつぼと該基板との間に設けられ、高
周波電源より給電される高周波励起用コイルと、
該真空槽内へガスを供給するためのガス導入部と
を有するイオンプレーテイング装置において、 直流バイアス電圧印加電極板に切り込みまたは
突起を設けて絶縁膜の付着しない部分を設けたこ
とを特徴とするイオンプレーテイング装置。 (2) 該直流バイアス電圧印加電極は斜めに切り
込み部を設けられている実用新案登録請求の範囲
第１項記載のイオンプレーテイング装置。 (3) 該直流バイアス電圧印加電極は突起部を設
けられている実用新案登録請求の範囲第１項記載
のイオンプレーテイング装置。[Scope of Claim for Utility Model Registration] (1) A vacuum chamber, an evaporation source crucible disposed within the vacuum chamber, and an evaporation source crucible disposed in the vacuum chamber at a position opposite to the evaporation source crucible, which supports a film-forming object. a DC bias voltage application electrode provided on the upper part of the substrate holder and the substrate to be film-formed; a high-frequency excitation coil provided between the evaporation source crucible and the substrate and supplied with power from a high-frequency power source;
The ion plating apparatus has a gas introduction section for supplying gas into the vacuum chamber, characterized in that a notch or protrusion is provided in the DC bias voltage application electrode plate to provide a portion to which an insulating film does not adhere. Ion plating equipment. (2) The ion plating apparatus according to claim 1, wherein the DC bias voltage application electrode is provided with an oblique notch. (3) The ion plating apparatus according to claim 1, wherein the DC bias voltage application electrode is provided with a protrusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16850586U JPS6373355U (en) | 1986-11-01 | 1986-11-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16850586U JPS6373355U (en) | 1986-11-01 | 1986-11-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6373355U true JPS6373355U (en) | 1988-05-16 |
Family
ID=31101438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16850586U Pending JPS6373355U (en) | 1986-11-01 | 1986-11-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6373355U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63109159A (en) * | 1986-10-23 | 1988-05-13 | Babcock Hitachi Kk | Method for deposition of metal for catalyst on inorganic carrier having pores |
-
1986
- 1986-11-01 JP JP16850586U patent/JPS6373355U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63109159A (en) * | 1986-10-23 | 1988-05-13 | Babcock Hitachi Kk | Method for deposition of metal for catalyst on inorganic carrier having pores |