JPS6430260A - Read-only memory device - Google Patents

Read-only memory device

Info

Publication number
JPS6430260A
JPS6430260A JP62187201A JP18720187A JPS6430260A JP S6430260 A JPS6430260 A JP S6430260A JP 62187201 A JP62187201 A JP 62187201A JP 18720187 A JP18720187 A JP 18720187A JP S6430260 A JPS6430260 A JP S6430260A
Authority
JP
Japan
Prior art keywords
impurity diffused
side ends
electrode
layers
type threshold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62187201A
Other languages
Japanese (ja)
Inventor
Kenji Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62187201A priority Critical patent/JPS6430260A/en
Publication of JPS6430260A publication Critical patent/JPS6430260A/en
Pending legal-status Critical Current

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  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To make the length of an electrode shorter than usual so as not only to be adequate for the dense integration but also improved in operational speed by a method wherein the form of an impurity diffused layer which gives an enhancement type threshold voltage is made to be such a form as its one end intersects obliquely one end of an electrode as they are viewed in a plane figure. CONSTITUTION:An element isolation insulating film 14 is formed on a p-type silicon substrate 1, boron ions are implanted into the whole face, a resist film is deposited on a region which gives a depression type threshold (BTD), and impurity diffused layers 15 and 151 are formed by implanting aresenic ions. In this processes, the layers 15 and 151 are formed in such a manner as one side ends of them intersect one side ends of gate electrodes 6 and 12 and both side ends of an electrode formed in the later process as they are viewed in a plane figure. In addition, a boron ion implanted region other than the impurity diffused layers 15 and 151 which give VTD is made to be impurity diffused layers 14, 141, and 142 which give an enhancement type threshold voltage (VTE).
JP62187201A 1987-07-27 1987-07-27 Read-only memory device Pending JPS6430260A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62187201A JPS6430260A (en) 1987-07-27 1987-07-27 Read-only memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62187201A JPS6430260A (en) 1987-07-27 1987-07-27 Read-only memory device

Publications (1)

Publication Number Publication Date
JPS6430260A true JPS6430260A (en) 1989-02-01

Family

ID=16201862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62187201A Pending JPS6430260A (en) 1987-07-27 1987-07-27 Read-only memory device

Country Status (1)

Country Link
JP (1) JPS6430260A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0310555U (en) * 1989-06-17 1991-01-31
JPH03142876A (en) * 1989-10-27 1991-06-18 Sony Corp Read only memory device and manufacture thereof
JPH0479179A (en) * 1990-07-19 1992-03-12 Pfu Ltd Socket connector for stacking package

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0310555U (en) * 1989-06-17 1991-01-31
JPH03142876A (en) * 1989-10-27 1991-06-18 Sony Corp Read only memory device and manufacture thereof
JPH0479179A (en) * 1990-07-19 1992-03-12 Pfu Ltd Socket connector for stacking package

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