JPS6436769A - Plasma treatment device - Google Patents

Plasma treatment device

Info

Publication number
JPS6436769A
JPS6436769A JP63103093A JP10309388A JPS6436769A JP S6436769 A JPS6436769 A JP S6436769A JP 63103093 A JP63103093 A JP 63103093A JP 10309388 A JP10309388 A JP 10309388A JP S6436769 A JPS6436769 A JP S6436769A
Authority
JP
Japan
Prior art keywords
reactive gas
reaction chamber
substrate
magnetic field
vacuum vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63103093A
Other languages
English (en)
Other versions
JPH0672306B2 (ja
Inventor
Naoki Hirose
Takashi Inushima
Toru Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JPS6436769A publication Critical patent/JPS6436769A/ja
Publication of JPH0672306B2 publication Critical patent/JPH0672306B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00—Coating processes
    • Y10S427/103—Diamond-like carbon coating, i.e. DLC
    • Y10S427/104—Utilizing low energy electromagnetic radiation, e.g. microwave, radio wave, IR, UV, visible, actinic laser

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP63103093A 1987-04-27 1988-04-26 プラズマ処理装置およびプラズマ処理方法 Expired - Lifetime JPH0672306B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP62-104024 1987-04-27
JP10402587 1987-04-27
JP62-104025 1987-04-27
JP10402487 1987-04-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP7242484A Division JP2715277B2 (ja) 1995-08-28 1995-08-28 薄膜形成装置

Publications (2)

Publication Number Publication Date
JPS6436769A true JPS6436769A (en) 1989-02-07
JPH0672306B2 JPH0672306B2 (ja) 1994-09-14

Family

ID=26444581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63103093A Expired - Lifetime JPH0672306B2 (ja) 1987-04-27 1988-04-26 プラズマ処理装置およびプラズマ処理方法

Country Status (2)

Country Link
US (7) US4926791A (ja)
JP (1) JPH0672306B2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
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JPH03261137A (ja) * 1990-03-12 1991-11-21 Akira Oota マイクロ波プラズマ発生装置
US5266146A (en) * 1990-09-20 1993-11-30 Hitachi, Ltd. Microwave-powered plasma-generating apparatus and method
JP2023515564A (ja) * 2020-02-24 2023-04-13 エム・セブン・ディー コーポレーション ダイヤモンド成長のためのプラズマ成形

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US5203959A (en) * 1987-04-27 1993-04-20 Semiconductor Energy Laboratory Co., Ltd. Microwave plasma etching and deposition method employing first and second magnetic fields
US4926791A (en) * 1987-04-27 1990-05-22 Semiconductor Energy Laboratory Co., Ltd. Microwave plasma apparatus employing helmholtz coils and ioffe bars
KR920002864B1 (ko) * 1987-07-20 1992-04-06 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리방법 및 그 장치
JPH0668152B2 (ja) * 1988-01-27 1994-08-31 株式会社半導体エネルギー研究所 薄膜形成装置
EP0402867B1 (en) * 1989-06-15 1995-03-01 Sel Semiconductor Energy Laboratory Co., Ltd. Apparatus for microwave processing in a magnetic field
JP2711580B2 (ja) * 1990-01-12 1998-02-10 アルプス電気株式会社 成形金型の製造方法
US5071670A (en) * 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
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US20100257037A1 (en) * 2001-12-14 2010-10-07 Matz William R Method and system for targeted incentives
US6163055A (en) * 1997-03-24 2000-12-19 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
US6927826B2 (en) * 1997-03-26 2005-08-09 Semiconductor Energy Labaratory Co., Ltd. Display device
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US6313587B1 (en) 1998-01-13 2001-11-06 Fusion Lighting, Inc. High frequency inductive lamp and power oscillator
US6137237A (en) 1998-01-13 2000-10-24 Fusion Lighting, Inc. High frequency inductive lamp and power oscillator
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JPH11307782A (ja) 1998-04-24 1999-11-05 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6390019B1 (en) * 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
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US6475836B1 (en) * 1999-03-29 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
FR2795906B1 (fr) * 1999-07-01 2001-08-17 Commissariat Energie Atomique Procede et dispositif de depot par plasma a la resonance cyclotron electronique de couches de tissus de nonofibres de carbone et couches de tissus ainsi obtenus
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US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
JP4008728B2 (ja) * 2002-03-20 2007-11-14 株式会社 液晶先端技術開発センター プラズマ処理装置
US20080096800A1 (en) * 2004-03-12 2008-04-24 Biodel, Inc. Rapid mucosal gel or film insulin compositions
MX350703B (es) 2009-05-13 2017-09-14 Sio2 Medical Products Inc Metodo de gasificacion para inspeccionar una superficie revestida.
WO2013170052A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US8301408B2 (en) * 2010-03-09 2012-10-30 Invensys Systems, Inc. Temperature prediction transmitter
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
EP2776603B1 (en) 2011-11-11 2019-03-06 SiO2 Medical Products, Inc. PASSIVATION, pH PROTECTIVE OR LUBRICITY COATING FOR PHARMACEUTICAL PACKAGE, COATING PROCESS AND APPARATUS
JP5836144B2 (ja) * 2012-01-31 2015-12-24 東京エレクトロン株式会社 マイクロ波放射機構および表面波プラズマ処理装置
US20150297800A1 (en) 2012-07-03 2015-10-22 Sio2 Medical Products, Inc. SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS
CA2890066C (en) 2012-11-01 2021-11-09 Sio2 Medical Products, Inc. Coating inspection method
US9903782B2 (en) 2012-11-16 2018-02-27 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
JP6382830B2 (ja) 2012-11-30 2018-08-29 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 医療シリンジ、カートリッジ等上でのｐｅｃｖｄ堆積の均一性制御
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
US9662450B2 (en) 2013-03-01 2017-05-30 Sio2 Medical Products, Inc. Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus
EP2971228B1 (en) 2013-03-11 2023-06-21 Si02 Medical Products, Inc. Coated packaging
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
US20160017490A1 (en) 2013-03-15 2016-01-21 Sio2 Medical Products, Inc. Coating method
US9435031B2 (en) 2014-01-07 2016-09-06 International Business Machines Corporation Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same
WO2015148471A1 (en) 2014-03-28 2015-10-01 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
US10151025B2 (en) * 2014-07-31 2018-12-11 Seagate Technology Llc Helmholtz coil assisted PECVD carbon source
EP3337915B1 (en) 2015-08-18 2021-11-03 SiO2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03261137A (ja) * 1990-03-12 1991-11-21 Akira Oota マイクロ波プラズマ発生装置
US5266146A (en) * 1990-09-20 1993-11-30 Hitachi, Ltd. Microwave-powered plasma-generating apparatus and method
JP2023515564A (ja) * 2020-02-24 2023-04-13 エム・セブン・ディー コーポレーション ダイヤモンド成長のためのプラズマ成形

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US20030021910A1 (en) 2003-01-30
US5858259A (en) 1999-01-12
US6838126B2 (en) 2005-01-04
US6217661B1 (en) 2001-04-17
US20050106331A1 (en) 2005-05-19
US5685913A (en) 1997-11-11
JPH0672306B2 (ja) 1994-09-14
US4926791A (en) 1990-05-22
US6423383B1 (en) 2002-07-23

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