JPS64765A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number: JPS64765A
Authority: JP; Japan
Prior art keywords: silicon layer; polycrystalline silicon; type polycrystalline; self; aligning manner
Prior art date: 1987-06-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP15568487A

Other languages

English (en)

Other versions

JPH01765A (ja

Inventor

Tomoyuki Furuhata

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Seiko Epson Corp

Original Assignee

Seiko Epson Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-06-23

Filing date

1987-06-23

Publication date

1989-01-05

1987-06-23 Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp

1987-06-23 Priority to JP15568487A priority Critical patent/JPS64765A/ja

1989-01-05 Publication of JPH01765A publication Critical patent/JPH01765A/ja

1989-01-05 Publication of JPS64765A publication Critical patent/JPS64765A/ja

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title abstract 2
229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 6
239000012535 impurity Substances 0.000 abstract 4
239000003990 capacitor Substances 0.000 abstract 2
238000009792 diffusion process Methods 0.000 abstract 2
230000003071 parasitic effect Effects 0.000 abstract 2
238000001459 lithography Methods 0.000 abstract 1
239000000758 substrate Substances 0.000 abstract 1

JP15568487A 1987-06-23 1987-06-23 Semiconductor device Pending JPS64765A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP15568487A JPS64765A (en)	1987-06-23	1987-06-23	Semiconductor device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP15568487A JPS64765A (en)	1987-06-23	1987-06-23	Semiconductor device

Publications (2)

Publication Number	Publication Date
JPH01765A JPH01765A (ja)	1989-01-05
JPS64765A true JPS64765A (en)	1989-01-05

Family

ID=15611299

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP15568487A Pending JPS64765A (en)	1987-06-23	1987-06-23	Semiconductor device

Country Status (1)

Country	Link
JP (1)	JPS64765A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0297027A (ja) *	1988-10-03	1990-04-09	Mitsubishi Electric Corp	半導体装置の製造方法
US4992388A (en) *	1989-12-10	1991-02-12	Motorola, Inc.	Short channel IGFET process
US5134452A (en) *	1990-04-03	1992-07-28	Mitsubishi Denki Kabushiki Kaisha	MIS type FET semiconductor device with gate insulating layer having a high dielectric breakdown strength
US5371024A (en) *	1988-09-30	1994-12-06	Kabushiki Kaisha Toshiba	Semiconductor device and process for manufacturing the same
US5606152A (en) *	1992-10-28	1997-02-25	The Furukawa Electric Co., Ltd.	Multilayer insulated wire and a manufacturing method therefor
US8210643B2 (en)	2007-05-14	2012-07-03	Brother Kogyo Kabushiki Kaisha	Liquid droplet jetting apparatus

1987
- 1987-06-23 JP JP15568487A patent/JPS64765A/ja active Pending

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5371024A (en) *	1988-09-30	1994-12-06	Kabushiki Kaisha Toshiba	Semiconductor device and process for manufacturing the same
JPH0297027A (ja) *	1988-10-03	1990-04-09	Mitsubishi Electric Corp	半導体装置の製造方法
US4992388A (en) *	1989-12-10	1991-02-12	Motorola, Inc.	Short channel IGFET process
US5134452A (en) *	1990-04-03	1992-07-28	Mitsubishi Denki Kabushiki Kaisha	MIS type FET semiconductor device with gate insulating layer having a high dielectric breakdown strength
US5606152A (en) *	1992-10-28	1997-02-25	The Furukawa Electric Co., Ltd.	Multilayer insulated wire and a manufacturing method therefor
US8210643B2 (en)	2007-05-14	2012-07-03	Brother Kogyo Kabushiki Kaisha	Liquid droplet jetting apparatus

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