JPS64769A - Vertical field-effect transistor - Google Patents
Vertical field-effect transistorInfo
- Publication number
- JPS64769A JPS64769A JP63034446A JP3444688A JPS64769A JP S64769 A JPS64769 A JP S64769A JP 63034446 A JP63034446 A JP 63034446A JP 3444688 A JP3444688 A JP 3444688A JP S64769 A JPS64769 A JP S64769A
- Authority
- JP
- Japan
- Prior art keywords
- base
- drain region
- interval
- region
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 3
- 230000005684 electric field Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To improve breakdown strength and to improve operating speed, by providing An additional region, which has a reverse conductivity type with respect to a drain region and is not in contact with a base region, in the drain region at the intermediate position in the diagonal direction of neighboring base regions.
CONSTITUTION: An intermediate position, i.e., a point A, is located in the diagonal direction of neighboring base regions 3 and directly beneath a mesh shaped gate electrode 5. An ion implanted impurity layer, which has a reverse conductivity type with respect to a drain region 2, is formed in said N- drain region 2 at the point A in the main surface of the N- drain region 2. Said layer is constituted as an electric field alleviating layer 8. In a vertical type field effect transistor having said constitution, the yield of part, where base-to-base interval is larger than the interval between the neighboring base region 3, can be prevented. Thus, the base-to-base interval is made uniform to the optimum base-to-base interval. The breakdown strength of the field effect transistor is kept at breakdown strength, which is determined with the optimum base-to- base interval.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63034446A JPS64769A (en) | 1987-02-16 | 1988-02-16 | Vertical field-effect transistor |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3142687 | 1987-02-16 | ||
| JP62-31426 | 1987-02-16 | ||
| JP63034446A JPS64769A (en) | 1987-02-16 | 1988-02-16 | Vertical field-effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01769A JPH01769A (en) | 1989-01-05 |
| JPS64769A true JPS64769A (en) | 1989-01-05 |
Family
ID=26369892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63034446A Pending JPS64769A (en) | 1987-02-16 | 1988-02-16 | Vertical field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS64769A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5136349A (en) * | 1989-08-30 | 1992-08-04 | Siliconix Incorporated | Closed cell transistor with built-in voltage clamp |
| WO1993011567A1 (en) * | 1991-11-25 | 1993-06-10 | Harris Corporation | Power fet with shielded channels |
| US5420450A (en) * | 1992-09-10 | 1995-05-30 | Kabushiki Kaisha Toshiba | Semiconductor device having stable breakdown voltage in wiring area |
| EP0778620A3 (en) * | 1995-12-07 | 1997-12-29 | Kabushiki Kaisha Toshiba | Vertical MOS type semiconductor device |
| US7833863B1 (en) | 2003-12-02 | 2010-11-16 | Vishay-Siliconix | Method of manufacturing a closed cell trench MOSFET |
| US8183629B2 (en) | 2004-05-13 | 2012-05-22 | Vishay-Siliconix | Stacked trench metal-oxide-semiconductor field effect transistor device |
| US8368126B2 (en) | 2007-04-19 | 2013-02-05 | Vishay-Siliconix | Trench metal oxide semiconductor with recessed trench material and remote contacts |
| US10032901B2 (en) | 2009-10-30 | 2018-07-24 | Vishay-Siliconix | Semiconductor device with trench-like feed-throughs |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS607764A (en) * | 1983-06-13 | 1985-01-16 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Semiconductor device |
-
1988
- 1988-02-16 JP JP63034446A patent/JPS64769A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS607764A (en) * | 1983-06-13 | 1985-01-16 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Semiconductor device |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5136349A (en) * | 1989-08-30 | 1992-08-04 | Siliconix Incorporated | Closed cell transistor with built-in voltage clamp |
| WO1993011567A1 (en) * | 1991-11-25 | 1993-06-10 | Harris Corporation | Power fet with shielded channels |
| US5243211A (en) * | 1991-11-25 | 1993-09-07 | Harris Corporation | Power fet with shielded channels |
| US5420450A (en) * | 1992-09-10 | 1995-05-30 | Kabushiki Kaisha Toshiba | Semiconductor device having stable breakdown voltage in wiring area |
| EP0778620A3 (en) * | 1995-12-07 | 1997-12-29 | Kabushiki Kaisha Toshiba | Vertical MOS type semiconductor device |
| US6002153A (en) * | 1995-12-07 | 1999-12-14 | Kabushiki Kaisha Toshiba | MOS type semiconductor device with a current detecting function |
| US7833863B1 (en) | 2003-12-02 | 2010-11-16 | Vishay-Siliconix | Method of manufacturing a closed cell trench MOSFET |
| US8183629B2 (en) | 2004-05-13 | 2012-05-22 | Vishay-Siliconix | Stacked trench metal-oxide-semiconductor field effect transistor device |
| US8368126B2 (en) | 2007-04-19 | 2013-02-05 | Vishay-Siliconix | Trench metal oxide semiconductor with recessed trench material and remote contacts |
| US8883580B2 (en) | 2007-04-19 | 2014-11-11 | Vishay-Siliconix | Trench metal oxide semiconductor with recessed trench material and remote contacts |
| US10032901B2 (en) | 2009-10-30 | 2018-07-24 | Vishay-Siliconix | Semiconductor device with trench-like feed-throughs |
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