JPS64785A - Manufacture of mask semiconductor laser - Google Patents

Manufacture of mask semiconductor laser

Info

Publication number
JPS64785A
JPS64785A JP62166617A JP16661787A JPS64785A JP S64785 A JPS64785 A JP S64785A JP 62166617 A JP62166617 A JP 62166617A JP 16661787 A JP16661787 A JP 16661787A JP S64785 A JPS64785 A JP S64785A
Authority
JP
Japan
Prior art keywords
mask
insulating layer
semiconductor laser
laser
emission hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62166617A
Other languages
English (en)
Other versions
JPH01785A (ja
Inventor
Hiroshi Kobayashi
Haruhiko Machida
Masato Harigai
Yasushi Ide
Jun Aketo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61178140A external-priority patent/JP2511890B2/ja
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP62166617A priority Critical patent/JPS64785A/ja
Priority to US07/080,389 priority patent/US4840922A/en
Publication of JPH01785A publication Critical patent/JPH01785A/ja
Publication of JPS64785A publication Critical patent/JPS64785A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0286—Coatings with a reflectivity that is not constant over the facets, e.g. apertures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP62166617A 1986-07-29 1987-07-03 Manufacture of mask semiconductor laser Pending JPS64785A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62166617A JPS64785A (en) 1986-07-29 1987-07-03 Manufacture of mask semiconductor laser
US07/080,389 US4840922A (en) 1986-07-29 1987-07-29 Method of manufacturing masked semiconductor laser

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP61178140A JP2511890B2 (ja) 1986-07-29 1986-07-29 マスク半導体レ−ザ−の製作方法
JP5778487 1987-03-12
JP62-57784 1987-03-12
JP62166617A JPS64785A (en) 1986-07-29 1987-07-03 Manufacture of mask semiconductor laser

Publications (2)

Publication Number Publication Date
JPH01785A JPH01785A (ja) 1989-01-05
JPS64785A true JPS64785A (en) 1989-01-05

Family

ID=27296377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62166617A Pending JPS64785A (en) 1986-07-29 1987-07-03 Manufacture of mask semiconductor laser

Country Status (2)

Country Link
US (1) US4840922A (ja)
JP (1) JPS64785A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02222588A (ja) * 1989-02-23 1990-09-05 Ricoh Co Ltd マスク半導体レーザの製作方法
JPH0378283A (ja) * 1989-08-21 1991-04-03 Ricoh Co Ltd マスク半導体レーザの作製方法
JP2000022277A (ja) * 1998-06-29 2000-01-21 Toshiba Corp 発光素子及びその製造方法
US6835963B2 (en) 1999-12-22 2004-12-28 Kabushiki Kaisha Toshiba Light-emitting element and method of fabrication thereof
US7103082B2 (en) 2001-05-31 2006-09-05 Nichia Corporation Semiconductor laser element
JP2020129653A (ja) * 2019-02-08 2020-08-27 シャープ株式会社 発光素子及びその製造方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2633451B1 (fr) * 1988-06-24 1990-10-05 Labo Electronique Physique Procede de realisation de dispositifs semiconducteurs incluant au moins une etape de gravure ionique reactive
US5208468A (en) * 1989-02-03 1993-05-04 Sharp Kabushiki Kaisha Semiconductor laser device with a sulfur-containing film provided between the facet and the protective film
JP2941364B2 (ja) * 1990-06-19 1999-08-25 株式会社東芝 半導体レーザ装置
US5137844A (en) * 1991-04-05 1992-08-11 Polaroid Corporation Process to adjust output of light emitters
US5625617A (en) * 1995-09-06 1997-04-29 Lucent Technologies Inc. Near-field optical apparatus with a laser having a non-uniform emission face
JP2000357339A (ja) * 1999-06-14 2000-12-26 Minolta Co Ltd 近接場光発生装置
EP1104031B1 (en) * 1999-11-15 2012-04-11 Panasonic Corporation Nitride semiconductor laser diode and method of fabricating the same
JP4160226B2 (ja) 1999-12-28 2008-10-01 株式会社東芝 半導体レーザ装置
US7042810B2 (en) * 2000-01-31 2006-05-09 Kabushiki Kaisha Toshiba Thermally-assisted magnetic recording head, method of manufacturing the same, and thermally-assisted magnetic recording apparatus
US6610447B2 (en) * 2001-03-30 2003-08-26 Intel Corporation Extreme ultraviolet mask with improved absorber
US7211296B2 (en) * 2003-08-22 2007-05-01 Battelle Memorial Institute Chalcogenide glass nanostructures
US7764722B2 (en) * 2007-02-26 2010-07-27 Nichia Corporation Nitride semiconductor laser element
KR101125334B1 (ko) * 2010-04-09 2012-03-27 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
DE102010015197A1 (de) * 2010-04-16 2012-01-19 Osram Opto Semiconductors Gmbh Laserlichtquelle
JP6048189B2 (ja) 2013-02-08 2016-12-21 株式会社リコー 投影システム、画像生成プログラム、情報処理装置及び画像生成方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849738A (en) * 1973-04-05 1974-11-19 Bell Telephone Labor Inc Multilayer antireflection coatings for solid state lasers
US3866238A (en) * 1973-06-01 1975-02-11 North Electric Co Laser diode for use with film memory system
US4001719A (en) * 1975-08-13 1977-01-04 Bell Telephone Laboratories, Incorporated Fabrication of a self-aligned mirror on a solid-state laser for controlling filamentation
US4178564A (en) * 1976-01-15 1979-12-11 Rca Corporation Half wave protection layers on injection lasers
US4100508A (en) * 1977-02-22 1978-07-11 Rca Corporation Semiconductor laser having fundamental lateral mode selectivity
JPS55115386A (en) * 1979-02-26 1980-09-05 Hitachi Ltd Semiconductor laser unit
US4317086A (en) * 1979-09-13 1982-02-23 Xerox Corporation Passivation and reflector structure for electroluminescent devices
JPS5889890A (ja) * 1981-11-24 1983-05-28 Hitachi Ltd レ−ザ−ダイオ−ド
US4751708A (en) * 1982-03-29 1988-06-14 International Business Machines Corporation Semiconductor injection lasers
US4656638A (en) * 1983-02-14 1987-04-07 Xerox Corporation Passivation for surfaces and interfaces of semiconductor laser facets or the like
JPS59211292A (ja) * 1983-05-16 1984-11-30 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS609189A (ja) * 1983-06-28 1985-01-18 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS60149183A (ja) * 1984-01-17 1985-08-06 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
JPS60214578A (ja) * 1984-04-10 1985-10-26 Fujitsu Ltd 半導体発光装置
JPS61140190A (ja) * 1984-12-12 1986-06-27 Canon Inc 半導体レ−ザ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02222588A (ja) * 1989-02-23 1990-09-05 Ricoh Co Ltd マスク半導体レーザの製作方法
JPH0378283A (ja) * 1989-08-21 1991-04-03 Ricoh Co Ltd マスク半導体レーザの作製方法
JP2000022277A (ja) * 1998-06-29 2000-01-21 Toshiba Corp 発光素子及びその製造方法
US6835963B2 (en) 1999-12-22 2004-12-28 Kabushiki Kaisha Toshiba Light-emitting element and method of fabrication thereof
US7103082B2 (en) 2001-05-31 2006-09-05 Nichia Corporation Semiconductor laser element
US7796663B2 (en) 2001-05-31 2010-09-14 Nichia Corporation Semiconductor laser device
JP2020129653A (ja) * 2019-02-08 2020-08-27 シャープ株式会社 発光素子及びその製造方法

Also Published As

Publication number Publication date
US4840922A (en) 1989-06-20

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