KR970002425B1 - Apparatus made of silica for semiconductor device fabrication - Google Patents

Apparatus made of silica for semiconductor device fabrication Download PDF

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Publication number
KR970002425B1
KR970002425B1 KR93011122A KR930011122A KR970002425B1 KR 970002425 B1 KR970002425 B1 KR 970002425B1 KR 93011122 A KR93011122 A KR 93011122A KR 930011122 A KR930011122 A KR 930011122A KR 970002425 B1 KR970002425 B1 KR 970002425B1
Authority
KR
South Korea
Prior art keywords
silica
semiconductor device
device fabrication
apparatus made
fabrication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR93011122A
Other languages
English (en)
Other versions
KR940006182A (ko
Inventor
Masanori Kobayashi
Ken Yamazaki
Tsutomu Ogawa
Yoshiko Okui
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
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Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of KR940006182A publication Critical patent/KR940006182A/ko
Application granted granted Critical
Publication of KR970002425B1 publication Critical patent/KR970002425B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/13—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Glass Compositions (AREA)
  • Chemical Vapour Deposition (AREA)
KR93011122A 1992-06-19 1993-06-17 Apparatus made of silica for semiconductor device fabrication Expired - Fee Related KR970002425B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP16146292 1992-06-19
JP92-161462 1992-06-19
JP93-60342 1993-03-19
JP06034293A JP3253734B2 (ja) 1992-06-19 1993-03-19 半導体装置製造用の石英製装置

Publications (2)

Publication Number Publication Date
KR940006182A KR940006182A (ko) 1994-03-23
KR970002425B1 true KR970002425B1 (en) 1997-03-05

Family

ID=26401411

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93011122A Expired - Fee Related KR970002425B1 (en) 1992-06-19 1993-06-17 Apparatus made of silica for semiconductor device fabrication

Country Status (5)

Country Link
US (1) US5395452A (ko)
EP (1) EP0574935B1 (ko)
JP (1) JP3253734B2 (ko)
KR (1) KR970002425B1 (ko)
DE (1) DE69322546T2 (ko)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE502094C2 (sv) * 1991-08-16 1995-08-14 Sandvik Ab Metod för diamantbeläggning med mikrovågsplasma
JPH088194A (ja) * 1994-06-16 1996-01-12 Kishimoto Sangyo Kk 気相成長機構および熱処理機構における加熱装置
US5882722A (en) * 1995-07-12 1999-03-16 Partnerships Limited, Inc. Electrical conductors formed from mixtures of metal powders and metallo-organic decompositions compounds
US7625420B1 (en) * 1997-02-24 2009-12-01 Cabot Corporation Copper powders methods for producing powders and devices fabricated from same
US6338809B1 (en) 1997-02-24 2002-01-15 Superior Micropowders Llc Aerosol method and apparatus, particulate products, and electronic devices made therefrom
TW460943B (en) * 1997-06-11 2001-10-21 Applied Materials Inc Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions
JPH11238728A (ja) * 1997-12-16 1999-08-31 Fujitsu Ltd 半導体デバイスの製造の際に使用される熱処理治具及びその製造法
US20030148024A1 (en) * 2001-10-05 2003-08-07 Kodas Toivo T. Low viscosity precursor compositons and methods for the depositon of conductive electronic features
KR100345304B1 (ko) * 2000-10-12 2002-07-25 한국전자통신연구원 수직형 초고진공 화학증착장치
US7629017B2 (en) * 2001-10-05 2009-12-08 Cabot Corporation Methods for the deposition of conductive electronic features
US7524528B2 (en) * 2001-10-05 2009-04-28 Cabot Corporation Precursor compositions and methods for the deposition of passive electrical components on a substrate
US20060159838A1 (en) * 2005-01-14 2006-07-20 Cabot Corporation Controlling ink migration during the formation of printable electronic features
KR20040077655A (ko) * 2001-10-19 2004-09-06 슈페리어 마이크로파우더스 엘엘씨 전자 형상 증착용 테잎 조성물
US7553512B2 (en) * 2001-11-02 2009-06-30 Cabot Corporation Method for fabricating an inorganic resistor
US7824466B2 (en) 2005-01-14 2010-11-02 Cabot Corporation Production of metal nanoparticles
US8383014B2 (en) 2010-06-15 2013-02-26 Cabot Corporation Metal nanoparticle compositions
US8167393B2 (en) * 2005-01-14 2012-05-01 Cabot Corporation Printable electronic features on non-uniform substrate and processes for making same
CN101102905B (zh) * 2005-01-14 2011-01-12 卡伯特公司 防伪特征件、其使用及其制造方法
US20060158497A1 (en) * 2005-01-14 2006-07-20 Karel Vanheusden Ink-jet printing of compositionally non-uniform features
TW200640596A (en) * 2005-01-14 2006-12-01 Cabot Corp Production of metal nanoparticles
WO2006076603A2 (en) * 2005-01-14 2006-07-20 Cabot Corporation Printable electrical conductors
US7533361B2 (en) * 2005-01-14 2009-05-12 Cabot Corporation System and process for manufacturing custom electronics by combining traditional electronics with printable electronics
US8334464B2 (en) * 2005-01-14 2012-12-18 Cabot Corporation Optimized multi-layer printing of electronics and displays
WO2006076614A1 (en) * 2005-01-14 2006-07-20 Cabot Corporation A process for manufacturing application specific printable circuits (aspc's) and other custom electronic devices
US20130168377A1 (en) * 2011-12-29 2013-07-04 Stmicroelectronics Pte Ltd. Adapter for coupling a diffusion furnace system
CN113889403A (zh) * 2021-12-08 2022-01-04 陕西亚成微电子股份有限公司 一种栅氧化层生长方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55126542A (en) * 1979-03-23 1980-09-30 Fujitsu Ltd Melting crucible for glass for optical transmission line
JPS5858292B2 (ja) * 1980-01-21 1983-12-24 株式会社日立製作所 シリカガラスの製造方法
JPS5849290B2 (ja) * 1980-08-18 1983-11-02 富士通株式会社 石英反応管
JPS61222534A (ja) * 1985-03-28 1986-10-03 Anelva Corp 表面処理方法および装置
US4830982A (en) * 1986-12-16 1989-05-16 American Telephone And Telegraph Company Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
GB8702834D0 (en) * 1987-02-09 1987-03-18 Tsl Group Plc Improving sag resistance of component
JPH068181B2 (ja) * 1987-03-26 1994-02-02 信越石英株式会社 半導体工業用石英ガラス製品
JP2610050B2 (ja) * 1989-08-29 1997-05-14 信越石英株式会社 半導体熱処理用石英ガラス管
JPH0729798B2 (ja) * 1989-08-31 1995-04-05 信越石英株式会社 半導体熱処理用複合石英ガラス管の製造方法
JP2927857B2 (ja) * 1990-01-19 1999-07-28 株式会社東芝 基板加熱装置

Also Published As

Publication number Publication date
KR940006182A (ko) 1994-03-23
JPH0669145A (ja) 1994-03-11
DE69322546D1 (de) 1999-01-28
DE69322546T2 (de) 1999-04-29
JP3253734B2 (ja) 2002-02-04
EP0574935A1 (en) 1993-12-22
EP0574935B1 (en) 1998-12-16
US5395452A (en) 1995-03-07

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