KR970077384A - 극초단파 전자 부품 및 그 제조 방법 - Google Patents

극초단파 전자 부품 및 그 제조 방법 Download PDF

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Publication number
KR970077384A
KR970077384A KR1019970018570A KR19970018570A KR970077384A KR 970077384 A KR970077384 A KR 970077384A KR 1019970018570 A KR1019970018570 A KR 1019970018570A KR 19970018570 A KR19970018570 A KR 19970018570A KR 970077384 A KR970077384 A KR 970077384A
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South Korea
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sealing resin
microwave
chip
lead frame
electronic components
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KR1019970018570A
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KR100291227B1 (ko
Inventor
세이지 이찌까와
도모아끼 히로까와
도모아끼 기무라
다꾸 사또
준이찌 다나까
겐지 우찌다
마사또시 오오하라
다께오 오기하라
사또시 무라따
쓰또무 구보따
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가네꼬 히사시
닛뽕덴끼 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H10W74/473—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins containing a filler
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

극초단파 전자 부품은 몰드 수지 패키지에 봉지된 극초단파칩을 갖는다. 극초단파 전자 부품은 극초단파칩을 봉지하는 제1실링층 및 제1실링층을 봉지하는 제2실링층을 포함한다. 제1실링층은 제1실링층은 유전율을 저하시키는 효과가 있는 공극 부재 및 미소 기포를 포함한다. 또한, 극초단파 전자부품을 제조하는 방법을 개시한다.

Description

극초단파 전자 부품 및 그 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1e도는 본 발명의 제1실시예에 다른 극초단파 전자 부품의 단면도를 도시한 도면, 제1a도 내지 제1e도는 극초단파 전자 부품을 제조하는 본 발명의 제3실시예에 따른 공정을 설명하기 위해 도시한 부분 단면도.

Claims (5)

  1. 제1실링 수지층내에 봉지된 극초단파칩, 및 상기 제1실링 수지층을 봉지하는 제2실링 수지층으로 이루어지며, 상기 제1실링 수지층이 복수개의 공극을 포함하는 것을 특징으로 하는 극초단파 전자 부품.
  2. 제1항에 있어서, 상기 극초단파칩은 반도체 기판 및 전극 또는 상기 반도체 기판의 표면상에 실장된 전극 패드로 이루어지도록 이루어지며, 상기 전극 또는 플랜지를 갖는 전극 패드가 상기 전극 또는 전극 패드의 상단으로부터 상기 반도체 기판의 상기 표면으로 평행하게 확장되는 것을 특징으로 하는 극초단파 전자 부품.
  3. 리드 프레임상에 실장되고 배선 본딩에 의해서 전기적으로 접속되는 극초단파칩을 갖는 극초단파 전자 부품을 제조하는 방법에 있어서, 실링 수지에 의해서 봉지되는 극초단파칩은, 1차 로드 금형 세트의 제1몰드 캐비티에 극초단파칩 및 리드 프레임을 배치하는 단계, 제1실링 수지내에 공극을 생성시키기 위한 제1조건하에서 상기 제1몰드 캐비티로 제1실링 수지를 유입하는 단계, 상기 1차 몰드 금형 세트로부터 경화된 제1실링 수지내에 봉지된 극초단파칩 및 리드 프레임을 제거하는 단계, 제2몰드 금형 세트의 제2몰드 캐비티내에 경화된 제1실링 수지로 봉지된 극초단파칩 및 리드프레임을 배치시키는 단계, 상기 극초단파칩 및 리드 프레임을 봉지하는 제1실링 수지를 봉지하기 위하여 제2실링 수지내에 공극이 없도록 제조하는 제2조건하에서 상기 제2몰드 캐비티로 제2실링 수지를 유입하는 단계, 및 극초단파 전자 부품의 제2금형 세트로부터 수지로 봉지된 칩 및 리드 프레임을 제거하는 단계로 이루어지는 것을 특징으로 하는 극초단파 전자 부품을 제조하는 방법.
  4. 제3항에 있어서, 상기 제1조건은 실링 수지가 유입되는 통상적인 압력보다 낮은 압력으로 이루어지는 것을 특징으로 하는 방법.
  5. 제3항에 있어서, 상기 제1실링 수지 및 제2실링 수지는 같은 종류의 수지인 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970018570A 1996-05-14 1997-05-13 고주파전자부품및그제조방법 Expired - Fee Related KR100291227B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-118831 1996-05-14
JP8118831A JP2871591B2 (ja) 1996-05-14 1996-05-14 高周波用電子部品および高周波用電子部品の製造方法

Publications (2)

Publication Number Publication Date
KR970077384A true KR970077384A (ko) 1997-12-12
KR100291227B1 KR100291227B1 (ko) 2001-07-12

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Country Status (5)

Country Link
US (2) US5889232A (ko)
EP (1) EP0807971A3 (ko)
JP (1) JP2871591B2 (ko)
KR (1) KR100291227B1 (ko)
TW (1) TW371786B (ko)

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Also Published As

Publication number Publication date
EP0807971A2 (en) 1997-11-19
JPH09307028A (ja) 1997-11-28
EP0807971A3 (en) 1999-07-28
US5889232A (en) 1999-03-30
JP2871591B2 (ja) 1999-03-17
US5970322A (en) 1999-10-19
TW371786B (en) 1999-10-11
KR100291227B1 (ko) 2001-07-12

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