MD2610G2 - Спocоб получения пористой поверхности полупроводника - Google Patents

Спocоб получения пористой поверхности полупроводника Download PDF

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Publication number
MD2610G2
MD2610G2 MDA20040097A MD20040097A MD2610G2 MD 2610 G2 MD2610 G2 MD 2610G2 MD A20040097 A MDA20040097 A MD A20040097A MD 20040097 A MD20040097 A MD 20040097A MD 2610 G2 MD2610 G2 MD 2610G2
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MD
Moldova
Prior art keywords
porous surface
semiconductor porous
process semiconductor
surface obtaining
mask
Prior art date
Application number
MDA20040097A
Other languages
English (en)
Romanian (ro)
Other versions
MD2610F1 (en
Inventor
Эдуард МОНАЙКО
Ион ТИГИНЯНУ
Вячеслав ПОПА
Олеся ВОЛЧУК
Original Assignee
Ион ТИГИНЯНУ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ион ТИГИНЯНУ filed Critical Ион ТИГИНЯНУ
Priority to MDA20040097A priority Critical patent/MD2610G2/ru
Publication of MD2610F1 publication Critical patent/MD2610F1/xx
Publication of MD2610G2 publication Critical patent/MD2610G2/ru

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  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

Изобретение относится к технологии полупроводников, в частности к способам получения пористых поверхностей полупроводников.Сущность изобретения заключается в том, что на поверхность полупроводника наносят маску, селективно покрывающую её, и проводят электрохимическое травление. Новизна изобретения состоит в том, что маска выполнена из фоторезиста.
MDA20040097A 2004-04-28 2004-04-28 Спocоб получения пористой поверхности полупроводника MD2610G2 (ru)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20040097A MD2610G2 (ru) 2004-04-28 2004-04-28 Спocоб получения пористой поверхности полупроводника

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20040097A MD2610G2 (ru) 2004-04-28 2004-04-28 Спocоб получения пористой поверхности полупроводника

Publications (2)

Publication Number Publication Date
MD2610F1 MD2610F1 (en) 2004-11-30
MD2610G2 true MD2610G2 (ru) 2005-06-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20040097A MD2610G2 (ru) 2004-04-28 2004-04-28 Спocоб получения пористой поверхности полупроводника

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MD (1) MD2610G2 (ru)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD2982G2 (ru) * 2005-08-10 2006-10-31 Институт Прикладной Физики Академии Наук Молдовы Cпособ получения полупроводниковых наноструктур
MD3811G2 (ru) * 2007-11-06 2009-08-31 Институт Прикладной Физики Академии Наук Молдовы Способ получения полупроводниковых наноструктурных зон
MD193Z (ru) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Способ получения полисульфидной плёнки

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2254275A1 (en) * 1998-11-20 2000-05-20 Patrik Schmuki Selective electrochemical process for creating semiconductor nano- and micro-patterns

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2254275A1 (en) * 1998-11-20 2000-05-20 Patrik Schmuki Selective electrochemical process for creating semiconductor nano- and micro-patterns

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD2982G2 (ru) * 2005-08-10 2006-10-31 Институт Прикладной Физики Академии Наук Молдовы Cпособ получения полупроводниковых наноструктур
MD3811G2 (ru) * 2007-11-06 2009-08-31 Институт Прикладной Физики Академии Наук Молдовы Способ получения полупроводниковых наноструктурных зон
MD193Z (ru) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Способ получения полисульфидной плёнки

Also Published As

Publication number Publication date
MD2610F1 (en) 2004-11-30

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KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees