NL8202470A - Hoogfrequentschakelinrichting en halfgeleiderinrichting voor toepassing in een dergelijke inrichting. - Google Patents

Hoogfrequentschakelinrichting en halfgeleiderinrichting voor toepassing in een dergelijke inrichting. Download PDF

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Publication number
NL8202470A
NL8202470A NL8202470A NL8202470A NL8202470A NL 8202470 A NL8202470 A NL 8202470A NL 8202470 A NL8202470 A NL 8202470A NL 8202470 A NL8202470 A NL 8202470A NL 8202470 A NL8202470 A NL 8202470A
Authority
NL
Netherlands
Prior art keywords
semiconductor
semiconductor body
metal pattern
semiconductor device
zone
Prior art date
Application number
NL8202470A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8202470A priority Critical patent/NL8202470A/nl
Priority to DE19833320275 priority patent/DE3320275A1/de
Priority to CA000430318A priority patent/CA1213079A/en
Priority to GB8316270A priority patent/GB2123209B/en
Priority to IT2164183A priority patent/IT1170151B/it
Priority to AU15837/83A priority patent/AU557136B2/en
Priority to FR8310036A priority patent/FR2529013B1/fr
Priority to JP58107976A priority patent/JPS594064A/ja
Publication of NL8202470A publication Critical patent/NL8202470A/nl
Priority to US06/913,615 priority patent/US4739389A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/698—Semiconductor materials that are electrically insulating, e.g. undoped silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
NL8202470A 1982-06-18 1982-06-18 Hoogfrequentschakelinrichting en halfgeleiderinrichting voor toepassing in een dergelijke inrichting. NL8202470A (nl)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NL8202470A NL8202470A (nl) 1982-06-18 1982-06-18 Hoogfrequentschakelinrichting en halfgeleiderinrichting voor toepassing in een dergelijke inrichting.
DE19833320275 DE3320275A1 (de) 1982-06-18 1983-06-04 Hf-schaltungsanordnung und halbleiteranordnung zum gebrauch in einer derartigen anordnung
CA000430318A CA1213079A (en) 1982-06-18 1983-06-14 Microwave semiconductor device working together with another semiconductor device for reference potential
GB8316270A GB2123209B (en) 1982-06-18 1983-06-15 High-frequency circuit
IT2164183A IT1170151B (it) 1982-06-18 1983-06-15 Complesso circuitale ad alta frequenza e dispositivo semiconduttore per l'impiego in tale complesso
AU15837/83A AU557136B2 (en) 1982-06-18 1983-06-16 Hf circuit construction
FR8310036A FR2529013B1 (fr) 1982-06-18 1983-06-17 Circuit a haute frequence et dispositif semi-conducteur pour equiper un tel circuit
JP58107976A JPS594064A (ja) 1982-06-18 1983-06-17 高周波回路装置
US06/913,615 US4739389A (en) 1982-06-18 1986-09-26 High-frequency circuit arrangement and semiconductor device for use in such an arrangement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8202470 1982-06-18
NL8202470A NL8202470A (nl) 1982-06-18 1982-06-18 Hoogfrequentschakelinrichting en halfgeleiderinrichting voor toepassing in een dergelijke inrichting.

Publications (1)

Publication Number Publication Date
NL8202470A true NL8202470A (nl) 1984-01-16

Family

ID=19839906

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8202470A NL8202470A (nl) 1982-06-18 1982-06-18 Hoogfrequentschakelinrichting en halfgeleiderinrichting voor toepassing in een dergelijke inrichting.

Country Status (9)

Country Link
US (1) US4739389A (it)
JP (1) JPS594064A (it)
AU (1) AU557136B2 (it)
CA (1) CA1213079A (it)
DE (1) DE3320275A1 (it)
FR (1) FR2529013B1 (it)
GB (1) GB2123209B (it)
IT (1) IT1170151B (it)
NL (1) NL8202470A (it)

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DE3382183D1 (de) * 1982-12-23 1991-04-04 Sumitomo Electric Industries Monolithische integrierte mikrowellenschaltung und verfahren zum auswaehlen derselben.
US4577213A (en) * 1984-03-05 1986-03-18 Honeywell Inc. Internally matched Schottky barrier beam lead diode
US4675717A (en) * 1984-10-09 1987-06-23 American Telephone And Telegraph Company, At&T Bell Laboratories Water-scale-integrated assembly
JPS61292383A (ja) * 1985-06-20 1986-12-23 Sony Corp 集積回路装置
CH668667A5 (de) * 1985-11-15 1989-01-13 Bbc Brown Boveri & Cie Leistungshalbleitermodul.
US5060048A (en) * 1986-10-22 1991-10-22 Siemens Aktiengesellschaft & Semikron GmbH Semiconductor component having at least one power mosfet
FR2608318B1 (fr) * 1986-12-16 1989-06-16 Thomson Semiconducteurs Dispositif semi-conducteur a faible bruit en hyperfrequence, monte dans un boitier
JPS6414949A (en) * 1987-07-08 1989-01-19 Nec Corp Semiconductor device and manufacture of the same
US4901136A (en) * 1987-07-14 1990-02-13 General Electric Company Multi-chip interconnection package
JPH02184054A (ja) * 1989-01-11 1990-07-18 Toshiba Corp ハイブリッド型樹脂封止半導体装置
US4967258A (en) * 1989-03-02 1990-10-30 Ball Corporation Structure for use in self-biasing and source bypassing a packaged, field-effect transistor and method for making same
EP0393220B1 (en) * 1989-04-20 1994-07-13 International Business Machines Corporation Integrated circuit package
JPH0777261B2 (ja) * 1989-07-10 1995-08-16 三菱電機株式会社 固体撮像装置及びその組立方法
US5244833A (en) * 1989-07-26 1993-09-14 International Business Machines Corporation Method for manufacturing an integrated circuit chip bump electrode using a polymer layer and a photoresist layer
DE68927931T2 (de) * 1989-07-26 1997-09-18 Ibm Verfahren zur Herstellung einer Packungsstruktur für einen integrierten Schaltungschip
JPH0724270B2 (ja) * 1989-12-14 1995-03-15 株式会社東芝 半導体装置及びその製造方法
EP0460554A1 (en) * 1990-05-30 1991-12-11 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
US5049978A (en) * 1990-09-10 1991-09-17 General Electric Company Conductively enclosed hybrid integrated circuit assembly using a silicon substrate
US5153408A (en) * 1990-10-31 1992-10-06 International Business Machines Corporation Method and structure for repairing electrical lines
DE4108154A1 (de) * 1991-03-14 1992-09-17 Telefunken Electronic Gmbh Elektronische baugruppe und verfahren zur herstellung von elektronischen baugruppen
EP0506122A3 (en) * 1991-03-29 1994-09-14 Matsushita Electric Industrial Co Ltd Power module
US5151769A (en) * 1991-04-04 1992-09-29 General Electric Company Optically patterned RF shield for an integrated circuit chip for analog and/or digital operation at microwave frequencies
JPH0583017A (ja) * 1991-09-24 1993-04-02 Mitsubishi Electric Corp マイクロ波集積回路装置
US5596171A (en) * 1993-05-21 1997-01-21 Harris; James M. Package for a high frequency semiconductor device and methods for fabricating and connecting the same to an external circuit
US5665649A (en) * 1993-05-21 1997-09-09 Gardiner Communications Corporation Process for forming a semiconductor device base array and mounting semiconductor devices thereon
JP2638514B2 (ja) * 1994-11-11 1997-08-06 日本電気株式会社 半導体パッケージ
DE19720300B4 (de) * 1996-06-03 2006-05-04 CiS Institut für Mikrosensorik gGmbH Elektronisches Hybrid-Bauelement und Verfahren zu seiner Herstellung
WO1998020553A1 (en) * 1996-11-05 1998-05-14 Philips Electronics N.V. Semiconductor device with a high-frequency bipolar transistor on an insulating substrate
JP3859340B2 (ja) * 1998-01-06 2006-12-20 三菱電機株式会社 半導体装置
EP1487019A1 (en) * 2003-06-12 2004-12-15 Koninklijke Philips Electronics N.V. Electronic device and method of manufacturing thereof
US9214909B2 (en) * 2005-07-29 2015-12-15 Mks Instruments, Inc. High reliability RF generator architecture

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US3022472A (en) * 1958-01-22 1962-02-20 Bell Telephone Labor Inc Variable equalizer employing semiconductive element
LU38614A1 (it) * 1959-05-06
DE1591501A1 (de) * 1967-06-06 1970-02-26 Siemens Ag Integrierter Halbleiterschaltkreis
US3577037A (en) * 1968-07-05 1971-05-04 Ibm Diffused electrical connector apparatus and method of making same
JPS4947713B1 (it) * 1970-04-27 1974-12-17
JPS50147292A (it) * 1974-05-15 1975-11-26
US4023198A (en) * 1974-08-16 1977-05-10 Motorola, Inc. High frequency, high power semiconductor package
US3996603A (en) * 1974-10-18 1976-12-07 Motorola, Inc. RF power semiconductor package and method of manufacture
US4122479A (en) * 1975-01-31 1978-10-24 Hitachi, Ltd. Optoelectronic device having control circuit for light emitting element and circuit for light receiving element integrated in a semiconductor body
JPS5293285A (en) * 1976-02-02 1977-08-05 Hitachi Ltd Structure for semiconductor device
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JPS5411666A (en) * 1977-06-28 1979-01-27 Nec Corp Microwave high output transistor
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JPS57166068A (en) * 1981-04-07 1982-10-13 Toshiba Corp Semiconductor device
EP0062725B1 (de) * 1981-04-14 1984-09-12 Deutsche ITT Industries GmbH Verfahren zum Herstellen eines integrierten Planartransistors
US4463322A (en) * 1981-08-14 1984-07-31 Texas Instruments Incorporated Self-biasing for FET-driven microwave VCOs

Also Published As

Publication number Publication date
CA1213079A (en) 1986-10-21
FR2529013B1 (fr) 1987-04-17
JPS594064A (ja) 1984-01-10
AU557136B2 (en) 1986-12-04
GB8316270D0 (en) 1983-07-20
IT8321641A1 (it) 1984-12-15
GB2123209B (en) 1986-01-02
DE3320275A1 (de) 1983-12-22
US4739389A (en) 1988-04-19
FR2529013A1 (fr) 1983-12-23
GB2123209A (en) 1984-01-25
AU1583783A (en) 1983-12-22
IT1170151B (it) 1987-06-03
IT8321641A0 (it) 1983-06-15

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
A85 Still pending on 85-01-01
BI The patent application has been withdrawn