PL3916771T3 - Podłoże opakowaniowe i urządzenie półprzewodnikowe zawierające takie podłoże - Google Patents
Podłoże opakowaniowe i urządzenie półprzewodnikowe zawierające takie podłożeInfo
- Publication number
- PL3916771T3 PL3916771T3 PL20769733.5T PL20769733T PL3916771T3 PL 3916771 T3 PL3916771 T3 PL 3916771T3 PL 20769733 T PL20769733 T PL 20769733T PL 3916771 T3 PL3916771 T3 PL 3916771T3
- Authority
- PL
- Poland
- Prior art keywords
- same
- semiconductor device
- packaging substrate
- packaging
- substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
- H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
- H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/63—Vias, e.g. via plugs
- H10W70/635—Through-vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
- H10W70/692—Ceramics or glasses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962817027P | 2019-03-12 | 2019-03-12 | |
| US201962817003P | 2019-03-12 | 2019-03-12 | |
| US201962816984P | 2019-03-12 | 2019-03-12 | |
| US201962825216P | 2019-03-28 | 2019-03-28 | |
| US201962826144P | 2019-03-29 | 2019-03-29 | |
| US201962826122P | 2019-03-29 | 2019-03-29 | |
| PCT/KR2020/003476 WO2020185016A1 (ko) | 2019-03-12 | 2020-03-12 | 패키징 기판 및 이를 포함하는 반도체 장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL3916771T3 true PL3916771T3 (pl) | 2025-09-01 |
Family
ID=72427150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL20769733.5T PL3916771T3 (pl) | 2019-03-12 | 2020-03-12 | Podłoże opakowaniowe i urządzenie półprzewodnikowe zawierające takie podłoże |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US11652039B2 (pl) |
| EP (1) | EP3916771B1 (pl) |
| JP (2) | JP7228697B2 (pl) |
| KR (2) | KR102396184B1 (pl) |
| CN (2) | CN115440697B (pl) |
| ES (1) | ES3033139T3 (pl) |
| PL (1) | PL3916771T3 (pl) |
| WO (1) | WO2020185016A1 (pl) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11652039B2 (en) * | 2019-03-12 | 2023-05-16 | Absolics Inc. | Packaging substrate with core layer and cavity structure and semiconductor device comprising the same |
| WO2022000191A1 (zh) * | 2020-06-29 | 2022-01-06 | 庆鼎精密电子（淮安）有限公司 | 内埋式电路板及其制作方法 |
| CN112867243A (zh) * | 2021-01-06 | 2021-05-28 | 英韧科技(上海)有限公司 | 多层电路板 |
| KR102515303B1 (ko) * | 2021-04-30 | 2023-03-29 | 앱솔릭스 인코포레이티드 | 패키징 기판 및 이를 포함하는 반도체 장치 |
| US11854922B2 (en) * | 2021-06-21 | 2023-12-26 | Texas Instruments Incorporated | Semicondutor package substrate with die cavity and redistribution layer |
| JP2023544669A (ja) * | 2021-08-30 | 2023-10-25 | アブソリックス インコーポレイテッド | パッケージング基板、半導体パッケージ、パッケージング基板の製造方法、及び半導体パッケージの製造方法 |
| US12604744B2 (en) | 2021-09-13 | 2026-04-14 | Intel Corporation | Integration of glass core into electronic substrates for fine pitch die tiling |
| US20230079607A1 (en) * | 2021-09-13 | 2023-03-16 | Intel Corporation | Fine bump pitch die to die tiling incorporating an inverted glass interposer |
| KR102613002B1 (ko) * | 2021-09-30 | 2023-12-13 | 한국전자기술연구원 | 반도체 패키지 및 그 제조방법 |
| US20230197697A1 (en) * | 2021-12-16 | 2023-06-22 | Intel Corporation | Microelectronic assemblies with glass substrates and thin film capacitors |
| US20230197646A1 (en) * | 2021-12-21 | 2023-06-22 | Intel Corporation | Low loss microstrip and stripline routing with blind trench vias for high speed signaling on a glass core |
| US12464759B2 (en) * | 2022-08-18 | 2025-11-04 | Macom Technology Solutions Holdings, Inc. | High electron mobility transistors having reduced drain current drift and methods of fabricating such devices |
| CN116130456A (zh) * | 2022-09-14 | 2023-05-16 | 珠海越亚半导体股份有限公司 | 一种芯片高密度互连封装结构及其制作方法 |
| KR102855264B1 (ko) * | 2022-11-22 | 2025-09-03 | 앱솔릭스 인코포레이티드 | 패키징 기판 및 이를 포함하는 반도체 패키지 |
| CN115732425A (zh) * | 2022-11-30 | 2023-03-03 | 北京京东方光电科技有限公司 | 埋入式封装基板及其制备方法、埋入式封装器件 |
| KR102947530B1 (ko) * | 2023-05-15 | 2026-04-01 | 앱솔릭스 인코포레이티드 | 소자 내장 기판 및 이의 제조방법 |
| US12588291B2 (en) | 2023-06-13 | 2026-03-24 | Intel Corporation | Substrates including micro-structured thin film capacitors |
| JP2025024456A (ja) * | 2023-08-07 | 2025-02-20 | ソニーセミコンダクタソリューションズ株式会社 | 発光素子および測距装置 |
| US20250079244A1 (en) * | 2023-08-30 | 2025-03-06 | Absolics Inc. | Method of manufacturing packaging substrate and packaging substrate manufactured thereby |
| US20250079243A1 (en) * | 2023-08-30 | 2025-03-06 | Absolics Inc. | Packaging substrate and method of manufacturing the same |
| EP4530691A1 (en) * | 2023-09-27 | 2025-04-02 | Absolics Inc. | Manufacturing method of packaging substrate and packaging substrate using the same |
| US20250112098A1 (en) * | 2023-09-28 | 2025-04-03 | Absolics Inc. | Packaging substrate, method of manufacturing an element package and method of manufacturing packaging substrate |
| KR20250063190A (ko) * | 2023-10-31 | 2025-05-08 | 앱솔릭스 인코포레이티드 | 패키징 기판 및 패키징 기판의 제조 방법 |
| EP4560693A1 (en) * | 2023-11-23 | 2025-05-28 | Absolics Inc. | Packaging substrate and manufacturing method of packaging substrate |
| JP2025088734A (ja) * | 2023-11-30 | 2025-06-11 | アブソリックス インコーポレイテッド | パッケージング基板及びパッケージング基板の製造方法 |
| CN120640514A (zh) * | 2024-03-11 | 2025-09-12 | 奥特斯奥地利科技与系统技术有限公司 | 部件承载件和制造部件承载件的方法 |
| TWI886921B (zh) * | 2024-04-24 | 2025-06-11 | 矽品精密工業股份有限公司 | 電子封裝件及其製法 |
| WO2026033945A1 (ja) * | 2024-08-09 | 2026-02-12 | 株式会社村田製作所 | 発熱素子内蔵基板 |
| KR20260038810A (ko) * | 2024-09-12 | 2026-03-19 | 앱솔릭스 인코포레이티드 | 패키징 기판 및 이를 포함하는 반도체 패키지 |
Family Cites Families (171)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4835598A (en) | 1985-06-13 | 1989-05-30 | Matsushita Electric Works, Ltd. | Wiring board |
| US5081563A (en) | 1990-04-27 | 1992-01-14 | International Business Machines Corporation | Multi-layer package incorporating a recessed cavity for a semiconductor chip |
| US5304743A (en) | 1992-05-12 | 1994-04-19 | Lsi Logic Corporation | Multilayer IC semiconductor package |
| JP3173250B2 (ja) | 1993-10-25 | 2001-06-04 | ソニー株式会社 | 樹脂封止型半導体装置の製造方法 |
| KR0184043B1 (ko) | 1995-08-01 | 1999-05-01 | 구자홍 | 브이오디용 멀티인터페이스 시스템 |
| KR0150124B1 (ko) | 1995-12-13 | 1998-10-15 | 김광호 | 액정표시장치 글래스 적재용 카세트 및 지그 |
| JP3152209B2 (ja) * | 1998-07-07 | 2001-04-03 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| WO2000016443A1 (en) | 1998-09-10 | 2000-03-23 | Viasystems Group, Inc. | Non-circular micro-via |
| JP2000142876A (ja) | 1999-01-01 | 2000-05-23 | Sharp Corp | 基板収納カセット |
| JP3878663B2 (ja) | 1999-06-18 | 2007-02-07 | 日本特殊陶業株式会社 | 配線基板の製造方法及び配線基板 |
| JP4605184B2 (ja) | 1999-08-25 | 2011-01-05 | 日立化成工業株式会社 | 配線接続材料及びそれを用いた配線板製造方法 |
| JP3973340B2 (ja) | 1999-10-05 | 2007-09-12 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置、配線基板、及び、それらの製造方法 |
| KR100361464B1 (ko) | 2000-05-24 | 2002-11-18 | 엘지.필립스 엘시디 주식회사 | 기판 수납용 카세트 |
| KR20020008574A (ko) | 2000-07-24 | 2002-01-31 | 김영민 | 멀티 포크형 엔드 이펙터 및 유리기판의 반송방법 |
| KR100720090B1 (ko) | 2000-08-29 | 2007-05-18 | 삼성전자주식회사 | 액정 표시 장치용 글래스 적재 카세트 |
| EP1220309A1 (en) * | 2000-12-28 | 2002-07-03 | STMicroelectronics S.r.l. | Manufacturing method of an electronic device package |
| JP4092890B2 (ja) | 2001-05-31 | 2008-05-28 | 株式会社日立製作所 | マルチチップモジュール |
| JP4012375B2 (ja) | 2001-05-31 | 2007-11-21 | 株式会社ルネサステクノロジ | 配線基板およびその製造方法 |
| KR200266536Y1 (ko) | 2001-07-12 | 2002-02-28 | (주)상아프론테크 | 액정표시장치 글래스 적재용 카세트의 사이드 프레임 |
| JP3998984B2 (ja) | 2002-01-18 | 2007-10-31 | 富士通株式会社 | 回路基板及びその製造方法 |
| KR100447323B1 (ko) | 2002-03-22 | 2004-09-07 | 주식회사 하이닉스반도체 | 반도체 소자의 물리기상 증착 방법 |
| US20040107569A1 (en) | 2002-12-05 | 2004-06-10 | John Guzek | Metal core substrate packaging |
| EP1435651B1 (en) | 2003-01-02 | 2012-11-07 | E.I. Du Pont De Nemours And Company | Process for the constrained sintering of asymetrically configured dielectric layers |
| JP2004311919A (ja) | 2003-02-21 | 2004-11-04 | Shinko Electric Ind Co Ltd | スルーホールフィル方法 |
| JP4265281B2 (ja) | 2003-05-22 | 2009-05-20 | 日立化成工業株式会社 | 多層回路基板、半導体チップ搭載基板及び半導体パッケージ、並びにそれらの製造方法 |
| JP4771808B2 (ja) | 2003-09-24 | 2011-09-14 | イビデン株式会社 | 半導体装置 |
| KR20050044989A (ko) | 2003-11-08 | 2005-05-16 | 내일시스템주식회사 | 액정 패널용 유리기판 운반용 트레이 |
| JP3951055B2 (ja) | 2004-02-18 | 2007-08-01 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置及び電子機器 |
| US7214475B2 (en) | 2004-03-29 | 2007-05-08 | Christoph Georg Erben | Compound for optical materials and methods of fabrication |
| US7416789B2 (en) | 2004-11-01 | 2008-08-26 | H.C. Starck Inc. | Refractory metal substrate with improved thermal conductivity |
| US20060182556A1 (en) | 2005-01-10 | 2006-08-17 | Au Optronics Corporation | Substrate transportation device (wire) |
| US7299111B2 (en) | 2005-02-04 | 2007-11-20 | Johnson Controls Technology Company | Method of clearing an HVAC control fault code memory |
| JP2006293257A (ja) | 2005-04-08 | 2006-10-26 | Samsung Electronics Co Ltd | 表示パネル用ガラスを積載するためのガラスカセット |
| WO2006129354A1 (ja) | 2005-06-01 | 2006-12-07 | Matsushita Electric Industrial Co., Ltd. | 回路基板とその製造方法及びこれを用いた電子部品 |
| JP4804083B2 (ja) | 2005-09-15 | 2011-10-26 | 旭化成イーマテリアルズ株式会社 | 導電性金属ペースト |
| KR100687557B1 (ko) | 2005-12-07 | 2007-02-27 | 삼성전기주식회사 | 뒤틀림이 개선된 기판 및 기판형성방법 |
| KR100747023B1 (ko) | 2006-01-19 | 2007-08-07 | 삼성전기주식회사 | 다층 인쇄회로기판 및 그 제작방법 |
| TWI433626B (zh) | 2006-03-17 | 2014-04-01 | Ngk Spark Plug Co | 配線基板之製造方法及印刷用遮罩 |
| JP2007281251A (ja) | 2006-04-07 | 2007-10-25 | E I Du Pont De Nemours & Co | サポートバーおよび基板カセット |
| JP2007281252A (ja) | 2006-04-07 | 2007-10-25 | E I Du Pont De Nemours & Co | 基板カセット |
| KR100794961B1 (ko) | 2006-07-04 | 2008-01-16 | 주식회사제4기한국 | 인쇄회로기판 제조용 ｐｓａｐ 방법 |
| US20080017407A1 (en) | 2006-07-24 | 2008-01-24 | Ibiden Co., Ltd. | Interposer and electronic device using the same |
| WO2008105496A1 (ja) | 2007-03-01 | 2008-09-04 | Nec Corporation | キャパシタ搭載インターポーザ及びその製造方法 |
| US20080217761A1 (en) | 2007-03-08 | 2008-09-11 | Advanced Chip Engineering Technology Inc. | Structure of semiconductor device package and method of the same |
| KR100859206B1 (ko) | 2007-03-15 | 2008-09-18 | 주식회사제4기한국 | 플라즈마를 이용한 ｌｖｈ 제조방법 |
| JP4840245B2 (ja) | 2007-04-27 | 2011-12-21 | 株式会社日立製作所 | マルチチップモジュール |
| JP5496445B2 (ja) * | 2007-06-08 | 2014-05-21 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2008311508A (ja) * | 2007-06-15 | 2008-12-25 | Shinko Electric Ind Co Ltd | 電子部品パッケージおよびその製造方法 |
| JP2009295862A (ja) | 2008-06-06 | 2009-12-17 | Mitsubishi Electric Corp | 高周波樹脂パッケージ |
| JP5378380B2 (ja) | 2008-07-23 | 2013-12-25 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| JP2010080679A (ja) | 2008-09-26 | 2010-04-08 | Kyocera Corp | 半導体装置の製造方法 |
| JP5654471B2 (ja) | 2008-10-15 | 2015-01-14 | オー・アー・セー・マイクロテック・アクチボラゲット | ビア配線を作るための方法 |
| KR100993220B1 (ko) | 2008-10-22 | 2010-11-10 | 주식회사 디이엔티 | 노광장비용 카세트의 위치 정렬장치 |
| KR101058685B1 (ko) | 2009-02-26 | 2011-08-22 | 삼성전기주식회사 | 패키지 기판 및 이의 제조 방법 |
| EP2447989B1 (en) | 2009-06-22 | 2016-05-04 | Mitsubishi Electric Corporation | Semiconductor package and semiconductor package mounting structure |
| US8774580B2 (en) * | 2009-12-02 | 2014-07-08 | Alcatel Lucent | Turning mirror for photonic integrated circuits |
| CN102097330B (zh) | 2009-12-11 | 2013-01-02 | 日月光半导体（上海）股份有限公司 | 封装基板的导通结构及其制造方法 |
| US9420707B2 (en) | 2009-12-17 | 2016-08-16 | Intel Corporation | Substrate for integrated circuit devices including multi-layer glass core and methods of making the same |
| US9275934B2 (en) | 2010-03-03 | 2016-03-01 | Georgia Tech Research Corporation | Through-package-via (TPV) structures on inorganic interposer and methods for fabricating same |
| KR101179386B1 (ko) | 2010-04-08 | 2012-09-03 | 성균관대학교산학협력단 | 패키지 기판의 제조방법 |
| JP2011228495A (ja) | 2010-04-20 | 2011-11-10 | Asahi Glass Co Ltd | 半導体デバイス貫通電極形成用のガラス基板の製造方法および半導体デバイス貫通電極形成用のガラス基板 |
| EP2562805A1 (en) | 2010-04-20 | 2013-02-27 | Asahi Glass Company, Limited | Glass substrate for semiconductor device via |
| US8846451B2 (en) | 2010-07-30 | 2014-09-30 | Applied Materials, Inc. | Methods for depositing metal in high aspect ratio features |
| US8584354B2 (en) | 2010-08-26 | 2013-11-19 | Corning Incorporated | Method for making glass interposer panels |
| US9167694B2 (en) * | 2010-11-02 | 2015-10-20 | Georgia Tech Research Corporation | Ultra-thin interposer assemblies with through vias |
| CN102122691B (zh) | 2011-01-18 | 2015-06-10 | 王楚雯 | Led外延片、led结构及led结构的形成方法 |
| KR20120051992A (ko) | 2010-11-15 | 2012-05-23 | 삼성전기주식회사 | 방열 기판 및 그 제조 방법, 그리고 상기 방열 기판을 구비하는 패키지 구조체 |
| JP5855905B2 (ja) | 2010-12-16 | 2016-02-09 | 日本特殊陶業株式会社 | 多層配線基板及びその製造方法 |
| JP2013038374A (ja) | 2011-01-20 | 2013-02-21 | Ibiden Co Ltd | 配線板及びその製造方法 |
| TWI600097B (zh) * | 2011-03-09 | 2017-09-21 | 日立化成股份有限公司 | Manufacturing method of package substrate for mounting semiconductor device, package substrate for mounting semiconductor device, and semiconductor package |
| US9420708B2 (en) | 2011-03-29 | 2016-08-16 | Ibiden Co., Ltd. | Method for manufacturing multilayer printed wiring board |
| KR101160120B1 (ko) | 2011-04-01 | 2012-06-26 | 한밭대학교 산학협력단 | 유리기판의 금속 배선 방법 및 이를 이용한 유리기판 |
| US20130050227A1 (en) | 2011-08-30 | 2013-02-28 | Qualcomm Mems Technologies, Inc. | Glass as a substrate material and a final package for mems and ic devices |
| JP5820673B2 (ja) | 2011-09-15 | 2015-11-24 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| TWI437672B (zh) | 2011-12-16 | 2014-05-11 | 印能科技股份有限公司 | 利用氣體充壓以抑制載板翹曲的載板固定方法 |
| US9117730B2 (en) | 2011-12-29 | 2015-08-25 | Ibiden Co., Ltd. | Printed wiring board and method for manufacturing printed wiring board |
| US20130293482A1 (en) | 2012-05-04 | 2013-11-07 | Qualcomm Mems Technologies, Inc. | Transparent through-glass via |
| US8816218B2 (en) | 2012-05-29 | 2014-08-26 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Multilayer electronic structures with vias having different dimensions |
| JP6083152B2 (ja) | 2012-08-24 | 2017-02-22 | ソニー株式会社 | 配線基板及び配線基板の製造方法 |
| JP6007044B2 (ja) | 2012-09-27 | 2016-10-12 | 新光電気工業株式会社 | 配線基板 |
| JP6114527B2 (ja) | 2012-10-05 | 2017-04-12 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
| US9113574B2 (en) * | 2012-10-25 | 2015-08-18 | Ibiden Co., Ltd. | Wiring board with built-in electronic component and method for manufacturing the same |
| JP2015038912A (ja) * | 2012-10-25 | 2015-02-26 | イビデン株式会社 | 電子部品内蔵配線板およびその製造方法 |
| JP2014127701A (ja) | 2012-12-27 | 2014-07-07 | Ibiden Co Ltd | 配線板及びその製造方法 |
| JP2014139963A (ja) * | 2013-01-21 | 2014-07-31 | Ngk Spark Plug Co Ltd | ガラス基板の製造方法 |
| US20140247269A1 (en) * | 2013-03-04 | 2014-09-04 | Qualcomm Mems Technologies, Inc. | High density, low loss 3-d through-glass inductor with magnetic core |
| CN118771747A (zh) | 2013-03-15 | 2024-10-15 | 肖特玻璃科技(苏州)有限公司 | 化学钢化的柔性超薄玻璃 |
| US20140326686A1 (en) | 2013-05-06 | 2014-11-06 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Substrate cartridge |
| KR101468680B1 (ko) | 2013-05-09 | 2014-12-04 | (주)옵토레인 | 인터포저 기판의 관통전극 형성 방법 및 인터포저 기판을 포함하는 반도체 패키지 |
| JP2014236029A (ja) | 2013-05-31 | 2014-12-15 | イビデン株式会社 | プリント配線板及びプリント配線板の製造方法 |
| JP5993812B2 (ja) | 2013-07-10 | 2016-09-14 | 富士フイルム株式会社 | 導電膜の製造方法 |
| KR20150014167A (ko) | 2013-07-29 | 2015-02-06 | 삼성전기주식회사 | 유리 코어가 구비된 인쇄회로기판 |
| KR101531097B1 (ko) | 2013-08-22 | 2015-06-23 | 삼성전기주식회사 | 인터포저 기판 및 이의 제조방법 |
| US9296646B2 (en) | 2013-08-29 | 2016-03-29 | Corning Incorporated | Methods for forming vias in glass substrates |
| US9263370B2 (en) | 2013-09-27 | 2016-02-16 | Qualcomm Mems Technologies, Inc. | Semiconductor device with via bar |
| JP2015080800A (ja) | 2013-10-23 | 2015-04-27 | 旭硝子株式会社 | レーザ光を用いてガラス基板に貫通孔を形成する方法 |
| JP6201663B2 (ja) | 2013-11-13 | 2017-09-27 | 大日本印刷株式会社 | 貫通電極基板の製造方法、貫通電極基板、および半導体装置 |
| US10293436B2 (en) | 2013-12-17 | 2019-05-21 | Corning Incorporated | Method for rapid laser drilling of holes in glass and products made therefrom |
| US9472479B2 (en) | 2014-01-31 | 2016-10-18 | Corning Incorporated | Methods and apparatus for providing an interposer for interconnecting semiconductor chips |
| JP6273873B2 (ja) | 2014-02-04 | 2018-02-07 | 大日本印刷株式会社 | ガラスインターポーザー基板の製造方法 |
| US9768090B2 (en) * | 2014-02-14 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate design for semiconductor packages and method of forming same |
| US10026671B2 (en) * | 2014-02-14 | 2018-07-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate design for semiconductor packages and method of forming same |
| US9935090B2 (en) * | 2014-02-14 | 2018-04-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate design for semiconductor packages and method of forming same |
| KR102155740B1 (ko) | 2014-02-21 | 2020-09-14 | 엘지이노텍 주식회사 | 인쇄회로기판 및 이의 제조 방법 |
| US10211169B2 (en) | 2014-05-27 | 2019-02-19 | University Of Florida Research Foundation, Inc. | Glass interposer integrated high quality electronic components and systems |
| JP6466252B2 (ja) | 2014-06-19 | 2019-02-06 | 株式会社ジェイデバイス | 半導体パッケージ及びその製造方法 |
| JP2016009844A (ja) | 2014-06-26 | 2016-01-18 | ソニー株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6387712B2 (ja) | 2014-07-07 | 2018-09-12 | イビデン株式会社 | プリント配線板 |
| US20170140847A1 (en) | 2014-08-29 | 2017-05-18 | Mitsui Mining & Smelting Co., Ltd. | Conductor connection structure, method for producing same, conductive composition, and electronic component module |
| CN105814687B (zh) | 2014-09-30 | 2019-01-25 | 株式会社村田制作所 | 半导体封装及其安装结构 |
| US20160111380A1 (en) | 2014-10-21 | 2016-04-21 | Georgia Tech Research Corporation | New structure of microelectronic packages with edge protection by coating |
| CN107108343B (zh) | 2014-11-05 | 2020-10-02 | 康宁股份有限公司 | 具有非平面特征和不含碱金属的玻璃元件的玻璃制品 |
| JP6539992B2 (ja) | 2014-11-14 | 2019-07-10 | 凸版印刷株式会社 | 配線回路基板、半導体装置、配線回路基板の製造方法、半導体装置の製造方法 |
| JP2016111221A (ja) | 2014-12-08 | 2016-06-20 | 日本特殊陶業株式会社 | 配線基板の製造方法及び配線基板 |
| KR102380304B1 (ko) | 2015-01-23 | 2022-03-30 | 삼성전기주식회사 | 전자부품 내장 기판 및 그 제조방법 |
| KR101696705B1 (ko) | 2015-01-30 | 2017-01-17 | 주식회사 심텍 | 칩 내장형 pcb 및 그 제조 방법과, 그 적층 패키지 |
| US9778226B2 (en) | 2015-02-19 | 2017-10-03 | Saudi Arabian Oil Company | Slug flow monitoring and gas measurement |
| US9585257B2 (en) | 2015-03-25 | 2017-02-28 | Globalfoundries Inc. | Method of forming a glass interposer with thermal vias |
| CN104714317B (zh) | 2015-04-07 | 2017-06-23 | 合肥鑫晟光电科技有限公司 | 一种卡匣及基板转移装置 |
| KR102172630B1 (ko) | 2015-04-16 | 2020-11-04 | 삼성전기주식회사 | 반도체 소자 패키지 및 그 제조방법 |
| JP6596906B2 (ja) | 2015-04-30 | 2019-10-30 | 大日本印刷株式会社 | 貫通電極基板並びに貫通電極基板を用いたインターポーザ及び半導体装置 |
| TWI544580B (zh) | 2015-05-01 | 2016-08-01 | 頎邦科技股份有限公司 | 具中空腔室之半導體封裝製程 |
| KR20160132751A (ko) | 2015-05-11 | 2016-11-21 | 삼성전기주식회사 | 전자부품 패키지 및 그 제조방법 |
| US9984979B2 (en) | 2015-05-11 | 2018-05-29 | Samsung Electro-Mechanics Co., Ltd. | Fan-out semiconductor package and method of manufacturing the same |
| KR102425753B1 (ko) | 2015-06-01 | 2022-07-28 | 삼성전기주식회사 | 인쇄회로기판, 인쇄회로기판의 제조 방법 및 이를 포함하는 반도체 패키지 |
| JP6657609B2 (ja) | 2015-06-12 | 2020-03-04 | 凸版印刷株式会社 | 配線回路基板、半導体装置、配線回路基板の製造方法および半導体装置の製造方法 |
| CN105035717B (zh) | 2015-06-23 | 2019-09-06 | 合肥鑫晟光电科技有限公司 | 装卸卡匣的系统和装卸卡匣的方法 |
| JP6645502B2 (ja) | 2015-07-24 | 2020-02-14 | Ａｇｃ株式会社 | ガラス基板、積層基板、積層基板の製造方法、積層体、梱包体、およびガラス基板の製造方法 |
| JP2017050315A (ja) | 2015-08-31 | 2017-03-09 | イビデン株式会社 | プリント配線板及びプリント配線板の製造方法 |
| CN108028206B (zh) | 2015-10-02 | 2021-08-24 | 三井金属矿业株式会社 | 粘结接合结构 |
| US20170103249A1 (en) | 2015-10-09 | 2017-04-13 | Corning Incorporated | Glass-based substrate with vias and process of forming the same |
| JP6690929B2 (ja) | 2015-12-16 | 2020-04-28 | 新光電気工業株式会社 | 配線基板、半導体装置及び配線基板の製造方法 |
| JP6720534B2 (ja) | 2016-01-07 | 2020-07-08 | 日立化成株式会社 | 組立品の製造方法、加圧接合容器及び加圧接合装置 |
| KR102450599B1 (ko) | 2016-01-12 | 2022-10-07 | 삼성전기주식회사 | 패키지기판 |
| US10330874B2 (en) | 2016-02-02 | 2019-06-25 | Georgia Tech Research Corporation | Mixed-signal substrate with integrated through-substrate vias |
| KR20190003461A (ko) | 2016-04-28 | 2019-01-09 | 에이지씨 가부시키가이샤 | 유리 적층체 및 그 제조 방법 |
| CN115028356B (zh) | 2016-04-29 | 2024-07-12 | 肖特玻璃科技(苏州)有限公司 | 高强度超薄玻璃以及其制造方法 |
| TWI559410B (zh) | 2016-05-09 | 2016-11-21 | 印鋐科技有限公司 | 以壓差法抑制材料翹曲的方法 |
| US10072328B2 (en) | 2016-05-24 | 2018-09-11 | Emagin Corporation | High-precision shadow-mask-deposition system and method therefor |
| JP6747063B2 (ja) * | 2016-06-01 | 2020-08-26 | 凸版印刷株式会社 | ガラス回路基板 |
| KR101738003B1 (ko) | 2016-08-18 | 2017-05-22 | (주)상아프론테크 | 기판 적재 카세트의 서포트 바를 지지하기 위한 인서트 구조체 및 이를 구비한 카세트 |
| US10366904B2 (en) | 2016-09-08 | 2019-07-30 | Corning Incorporated | Articles having holes with morphology attributes and methods for fabricating the same |
| KR101952864B1 (ko) * | 2016-09-30 | 2019-02-27 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| CN206541281U (zh) | 2016-10-12 | 2017-10-03 | 肖特玻璃科技(苏州)有限公司 | 一种电子器件结构及其使用的超薄玻璃板 |
| CN106449574B (zh) | 2016-12-05 | 2019-04-30 | 中国科学院微电子研究所 | 同轴式差分对硅通孔结构 |
| JP6984277B2 (ja) | 2016-12-27 | 2021-12-17 | 大日本印刷株式会社 | 有孔基板、有孔基板を備える実装基板及び有孔基板の製造方法 |
| JP6810617B2 (ja) | 2017-01-16 | 2021-01-06 | 富士通インターコネクトテクノロジーズ株式会社 | 回路基板、回路基板の製造方法及び電子装置 |
| JP7021854B2 (ja) | 2017-01-24 | 2022-02-17 | ゼネラル・エレクトリック・カンパニイ | 電力用電子回路パッケージおよびその製造方法 |
| DE102018100299A1 (de) | 2017-01-27 | 2018-08-02 | Schott Ag | Strukturiertes plattenförmiges Glaselement und Verfahren zu dessen Herstellung |
| US20180240778A1 (en) | 2017-02-22 | 2018-08-23 | Intel Corporation | Embedded multi-die interconnect bridge with improved power delivery |
| JP2018148086A (ja) | 2017-03-07 | 2018-09-20 | 大日本印刷株式会社 | 貫通電極基板の製造方法及び貫通電極基板 |
| JP2018163901A (ja) | 2017-03-24 | 2018-10-18 | イビデン株式会社 | プリント配線板 |
| JP7022365B2 (ja) | 2017-03-24 | 2022-02-18 | 大日本印刷株式会社 | 貫通電極基板及びその製造方法 |
| JP2018174189A (ja) | 2017-03-31 | 2018-11-08 | 大日本印刷株式会社 | 貫通電極基板およびその製造方法 |
| KR20180116733A (ko) | 2017-04-14 | 2018-10-25 | 한국전자통신연구원 | 반도체 패키지 |
| US11078112B2 (en) | 2017-05-25 | 2021-08-03 | Corning Incorporated | Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same |
| US10580725B2 (en) | 2017-05-25 | 2020-03-03 | Corning Incorporated | Articles having vias with geometry attributes and methods for fabricating the same |
| JP2018199605A (ja) | 2017-05-29 | 2018-12-20 | Ａｇｃ株式会社 | ガラス基板の製造方法およびガラス基板 |
| JP6928896B2 (ja) | 2017-07-05 | 2021-09-01 | 大日本印刷株式会社 | 実装基板及び実装基板の製造方法 |
| JP6871095B2 (ja) | 2017-07-14 | 2021-05-12 | 株式会社ディスコ | ガラスインターポーザの製造方法 |
| CN109411432B (zh) | 2017-08-18 | 2020-09-18 | 财团法人工业技术研究院 | 半导体封装重布线层结构 |
| KR102028715B1 (ko) | 2017-12-19 | 2019-10-07 | 삼성전자주식회사 | 반도체 패키지 |
| KR101903485B1 (ko) | 2018-03-27 | 2018-10-02 | (주)상아프론테크 | 기판 적재용 카세트 |
| CN108878343B (zh) | 2018-06-29 | 2022-05-03 | 信利半导体有限公司 | 一种柔性显示装置的制造方法 |
| KR101944718B1 (ko) | 2018-07-05 | 2019-02-01 | (주)상아프론테크 | 인서트 구조체 및 이를 구비한 기판 적재용 카세트 |
| JP6669201B2 (ja) | 2018-07-06 | 2020-03-18 | 大日本印刷株式会社 | 貫通電極基板 |
| KR102163059B1 (ko) * | 2018-09-07 | 2020-10-08 | 삼성전기주식회사 | 연결구조체 내장기판 |
| KR102499038B1 (ko) * | 2018-12-06 | 2023-02-13 | 삼성전자주식회사 | 안테나 모듈 |
| US11652039B2 (en) * | 2019-03-12 | 2023-05-16 | Absolics Inc. | Packaging substrate with core layer and cavity structure and semiconductor device comprising the same |
| KR20230033077A (ko) | 2021-08-26 | 2023-03-08 | 삼성디스플레이 주식회사 | 글래스 수납용 카세트, 글래스를 카세트에 적재하는 방법 및 커버 윈도우의 제조 방법 |
| US20240213170A1 (en) * | 2022-12-21 | 2024-06-27 | Intel Corporation | Glass substrate device with embedded components |
-
2020
- 2020-03-12 US US17/433,349 patent/US11652039B2/en active Active
- 2020-03-12 JP JP2021536269A patent/JP7228697B2/ja active Active
- 2020-03-12 CN CN202211095786.0A patent/CN115440697B/zh active Active
- 2020-03-12 PL PL20769733.5T patent/PL3916771T3/pl unknown
- 2020-03-12 KR KR1020217015659A patent/KR102396184B1/ko active Active
- 2020-03-12 KR KR1020227014092A patent/KR102653023B1/ko active Active
- 2020-03-12 WO PCT/KR2020/003476 patent/WO2020185016A1/ko not_active Ceased
- 2020-03-12 CN CN202080011282.9A patent/CN113366628B/zh active Active
- 2020-03-12 EP EP20769733.5A patent/EP3916771B1/en active Active
- 2020-03-12 ES ES20769733T patent/ES3033139T3/es active Active
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2022
- 2022-12-27 JP JP2022210549A patent/JP7547452B2/ja active Active
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2023
- 2023-03-01 US US18/176,975 patent/US12456672B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3916771A1 (en) | 2021-12-01 |
| JP2023052130A (ja) | 2023-04-11 |
| EP3916771A4 (en) | 2023-01-11 |
| WO2020185016A1 (ko) | 2020-09-17 |
| US20220051972A1 (en) | 2022-02-17 |
| ES3033139T3 (en) | 2025-07-31 |
| US20230207442A1 (en) | 2023-06-29 |
| JP2022517061A (ja) | 2022-03-04 |
| US11652039B2 (en) | 2023-05-16 |
| CN115440697B (zh) | 2025-08-15 |
| CN113366628B (zh) | 2022-09-30 |
| EP3916771B1 (en) | 2025-06-11 |
| KR20220060557A (ko) | 2022-05-11 |
| JP7228697B2 (ja) | 2023-02-24 |
| US12456672B2 (en) | 2025-10-28 |
| KR20210068579A (ko) | 2021-06-09 |
| KR102653023B1 (ko) | 2024-03-28 |
| JP7547452B2 (ja) | 2024-09-09 |
| CN113366628A (zh) | 2021-09-07 |
| CN115440697A (zh) | 2022-12-06 |
| KR102396184B1 (ko) | 2022-05-10 |
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