SE427598B - Halvledardiod avsedd att inga i integrerade kretsar - Google Patents

Halvledardiod avsedd att inga i integrerade kretsar

Info

Publication number
SE427598B
SE427598B SE8105040A SE8105040A SE427598B SE 427598 B SE427598 B SE 427598B SE 8105040 A SE8105040 A SE 8105040A SE 8105040 A SE8105040 A SE 8105040A SE 427598 B SE427598 B SE 427598B
Authority
SE
Sweden
Prior art keywords
diode
diffusion
layer
contact
type
Prior art date
Application number
SE8105040A
Other languages
English (en)
Swedish (sv)
Other versions
SE8105040L (sv
Inventor
K-H Eklund
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE8105040A priority Critical patent/SE427598B/sv
Priority to DE1982902481 priority patent/DE86210T1/de
Priority to EP82902481A priority patent/EP0086210B1/en
Priority to PCT/SE1982/000266 priority patent/WO1983000776A1/en
Priority to DE8282902481T priority patent/DE3264667D1/de
Priority to IT8222971A priority patent/IT1207305B/it
Publication of SE8105040L publication Critical patent/SE8105040L/
Priority to FI831227A priority patent/FI71039C/sv
Publication of SE427598B publication Critical patent/SE427598B/sv
Priority to NO831436A priority patent/NO158975C/no
Priority to DK179383A priority patent/DK157468C/da

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
SE8105040A 1981-08-25 1981-08-25 Halvledardiod avsedd att inga i integrerade kretsar SE427598B (sv)

Priority Applications (9)

Application Number Priority Date Filing Date Title
SE8105040A SE427598B (sv) 1981-08-25 1981-08-25 Halvledardiod avsedd att inga i integrerade kretsar
DE1982902481 DE86210T1 (de) 1981-08-25 1982-08-19 Diode fuer monolithische integrierte schaltung.
EP82902481A EP0086210B1 (en) 1981-08-25 1982-08-19 Diode for monolithic integrated circuit
PCT/SE1982/000266 WO1983000776A1 (en) 1981-08-25 1982-08-19 Diode for monolithic integrated circuit
DE8282902481T DE3264667D1 (en) 1981-08-25 1982-08-19 Diode for monolithic integrated circuit
IT8222971A IT1207305B (it) 1981-08-25 1982-08-25 Diodo per circuito integrato monolitico.
FI831227A FI71039C (fi) 1981-08-25 1983-04-12 Diod foer monolitintegrerad krets
NO831436A NO158975C (no) 1981-08-25 1983-04-22 Diode for monolitisk integrert krets.
DK179383A DK157468C (da) 1981-08-25 1983-04-22 Diode til monolitisk integreret kreds

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8105040A SE427598B (sv) 1981-08-25 1981-08-25 Halvledardiod avsedd att inga i integrerade kretsar

Publications (2)

Publication Number Publication Date
SE8105040L SE8105040L (sv) 1983-02-26
SE427598B true SE427598B (sv) 1983-04-18

Family

ID=20344426

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8105040A SE427598B (sv) 1981-08-25 1981-08-25 Halvledardiod avsedd att inga i integrerade kretsar

Country Status (7)

Country Link
EP (1) EP0086210B1 (da)
DE (1) DE3264667D1 (da)
DK (1) DK157468C (da)
FI (1) FI71039C (da)
IT (1) IT1207305B (da)
SE (1) SE427598B (da)
WO (1) WO1983000776A1 (da)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1197279B (it) * 1986-09-25 1988-11-30 Sgs Microelettronica Spa Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi
DE3832731A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
DE3832732A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
DE69427904T2 (de) * 1994-05-31 2002-04-04 Stmicroelectronics S.R.L., Agrate Brianza Integrierte Halbleiterdiode
JP4597284B2 (ja) * 1999-04-12 2010-12-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
GB2354879B (en) * 1999-08-11 2004-05-12 Mitel Semiconductor Ltd A semiconductor device
KR100751100B1 (ko) * 1999-09-16 2007-08-22 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 디바이스
JP4065104B2 (ja) * 2000-12-25 2008-03-19 三洋電機株式会社 半導体集積回路装置およびその製造方法
US7528459B2 (en) * 2003-05-27 2009-05-05 Nxp B.V. Punch-through diode and method of processing the same
CN102623511B (zh) * 2011-01-26 2015-12-02 上海华虹宏力半导体制造有限公司 功率二极管
US9391159B2 (en) * 2012-04-03 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Triple well isolated diode and method of making

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930909A (en) * 1966-10-21 1976-01-06 U.S. Philips Corporation Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth
US4027325A (en) * 1975-01-30 1977-05-31 Sprague Electric Company Integrated full wave diode bridge rectifier
US4117507A (en) * 1976-06-22 1978-09-26 Sgs-Ates Componeti Elettronici S.P.A. Diode formed in integrated-circuit structure
US4272307A (en) * 1979-03-12 1981-06-09 Sprague Electric Company Integrated circuit with I2 L and power transistors and method for making
JPS55132068A (en) * 1979-03-30 1980-10-14 Ibm Pnp bipolar transistor
JPS55134983A (en) * 1979-04-09 1980-10-21 Ibm Surface breakdown zener diode

Also Published As

Publication number Publication date
IT8222971A0 (it) 1982-08-25
SE8105040L (sv) 1983-02-26
IT1207305B (it) 1989-05-17
EP0086210A1 (en) 1983-08-24
DK157468C (da) 1990-05-21
FI71039C (fi) 1986-10-27
DK179383D0 (da) 1983-04-22
DK179383A (da) 1983-04-22
FI71039B (fi) 1986-07-18
WO1983000776A1 (en) 1983-03-03
FI831227A0 (fi) 1983-04-12
DE3264667D1 (en) 1985-08-14
DK157468B (da) 1990-01-08
EP0086210B1 (en) 1985-07-10
FI831227L (fi) 1983-04-12

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