SE7709509L - Hermetiskt forslutet holje for en ljusstyrd halvledaranordning - Google Patents

Hermetiskt forslutet holje for en ljusstyrd halvledaranordning

Info

Publication number
SE7709509L
SE7709509L SE7709509A SE7709509A SE7709509L SE 7709509 L SE7709509 L SE 7709509L SE 7709509 A SE7709509 A SE 7709509A SE 7709509 A SE7709509 A SE 7709509A SE 7709509 L SE7709509 L SE 7709509L
Authority
SE
Sweden
Prior art keywords
thyristor
light
light pipe
sleeve
hermetically sealed
Prior art date
Application number
SE7709509A
Other languages
English (en)
Inventor
M H Hanes
Jr L R Lowry
Original Assignee
Electric Power Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electric Power Res Inst filed Critical Electric Power Res Inst
Publication of SE7709509L publication Critical patent/SE7709509L/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/421—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4248—Feed-through connections for the hermetical passage of fibres through a package wall
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/138—Containers comprising a conductive base serving as an interconnection having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Led Device Packages (AREA)
SE7709509A 1977-05-26 1977-08-24 Hermetiskt forslutet holje for en ljusstyrd halvledaranordning SE7709509L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/800,706 US4131905A (en) 1977-05-26 1977-05-26 Light-triggered thyristor and package therefore

Publications (1)

Publication Number Publication Date
SE7709509L true SE7709509L (sv) 1978-11-27

Family

ID=25179152

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7709509A SE7709509L (sv) 1977-05-26 1977-08-24 Hermetiskt forslutet holje for en ljusstyrd halvledaranordning

Country Status (6)

Country Link
US (1) US4131905A (sv)
JP (1) JPS53147489A (sv)
CA (1) CA1081370A (sv)
DE (1) DE2808531A1 (sv)
GB (1) GB1529145A (sv)
SE (1) SE7709509L (sv)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207587A (en) * 1977-05-26 1980-06-10 Electric Power Research Institute, Inc. Package for light-triggered thyristor
US4186409A (en) * 1978-08-11 1980-01-29 Westinghouse Electric Corp. Light activated silicon switch
US4368481A (en) * 1979-06-19 1983-01-11 Tokyo Shibaura Denki Kabushiki Kaisha Light-driven semiconductor device
US4257058A (en) * 1979-07-05 1981-03-17 Electric Power Research Institute, Inc. Package for radiation triggered semiconductor device and method
GB2052785B (en) * 1979-07-05 1983-10-19 Burr Brown Res Corp Low profile optical coupling to planarmounted optoelectronic device
JPS5633886A (en) * 1979-08-28 1981-04-04 Mitsubishi Electric Corp Light drive semiconductor device
DE2936780C2 (de) * 1979-09-12 1985-02-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterbauelement
US4270135A (en) * 1979-12-12 1981-05-26 Westinghouse Electric Corp. High-frequency phototransistor operated with multiple light sources
JPS5788770A (en) * 1980-11-21 1982-06-02 Hitachi Ltd Photo semiconductor device
JPS5897864A (ja) * 1981-12-07 1983-06-10 Mitsubishi Electric Corp 光トリガサイリスタ
JPS5927573A (ja) * 1982-08-06 1984-02-14 Mitsubishi Electric Corp 光トリガサイリスタ素子
JPS5931062A (ja) * 1982-08-12 1984-02-18 Mitsubishi Electric Corp サイリスタ
JPS5939073A (ja) * 1982-08-27 1984-03-03 Fuji Electric Corp Res & Dev Ltd 半導体受光素子
DE3326847A1 (de) * 1983-07-26 1985-02-14 Westfälische Metall Industrie KG Hueck & Co, 4780 Lippstadt Vorrichtung zur uebertragung einer information
JPS6094770A (ja) * 1983-10-28 1985-05-27 Mitsubishi Electric Corp 光トリガサイリスタの製造方法
JPS60107859A (ja) * 1983-11-16 1985-06-13 Fuji Electric Corp Res & Dev Ltd 光駆動半導体装置
JPS6094853U (ja) * 1983-12-02 1985-06-28 株式会社日立製作所 光駆動型半導体装置
JPS60157256A (ja) * 1984-01-25 1985-08-17 Mitsubishi Electric Corp 光トリガサイリスタ
JPS60241263A (ja) * 1984-05-16 1985-11-30 Toshiba Corp 光駆動形半導体装置
US4757366A (en) * 1985-04-12 1988-07-12 Siemens Aktiengesellschaft Light-triggerable thyristor having low-loss feed of the trigger energy
EP0267536B1 (de) * 1986-11-12 1992-05-13 Alcatel SEL Aktiengesellschaft Hermetisch dichte Glasfaserdurchführung
DE3706255C2 (de) * 1987-02-26 1995-07-06 Siemens Ag Lichtzündbarer Thyristor mit zusätzlichem elektrischen Gatekontakt
US4970386A (en) * 1989-06-22 1990-11-13 Westinghouse Electric Corp. Vertical FET high speed optical sensor
FR2656739A1 (fr) * 1989-12-29 1991-07-05 Radiotechnique Compelec Photo-coupleur pour montage en surface.
DE19627426A1 (de) * 1996-07-08 1998-01-15 Asea Brown Boveri Lichtzündbarer Leistungshalbleiter sowie Verfahren zum Zusammenbauen eines solchen lichtzündbaren Leistungshalbleiters
US6154477A (en) * 1997-05-13 2000-11-28 Berkeley Research Associates, Inc. On-board laser-triggered multi-layer semiconductor power switch
JP5040234B2 (ja) * 2006-09-26 2012-10-03 三菱電機株式会社 圧接型半導体装置
GB201007530D0 (en) * 2010-05-05 2010-06-23 Rossiter Valentine J Highly inert fluid-handling optical systems
US9500808B2 (en) * 2012-05-09 2016-11-22 The Boeing Company Ruggedized photonic crystal sensor packaging

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3423594A (en) * 1964-03-03 1969-01-21 Anthony G Galopin Photoelectric semiconductor device with optical fiber means coupling input signals to base
DE1639048A1 (de) * 1966-10-10 1971-01-21 Westinghouse Electric Corp Photothyristor
US3590344A (en) * 1969-06-20 1971-06-29 Westinghouse Electric Corp Light activated semiconductor controlled rectifier
BE759345A (fr) * 1969-11-28 1971-05-24 Westinghouse Electric Corp Dispositif semiconducteur sensible aux radiations electromagnetiques
US3586932A (en) * 1969-12-12 1971-06-22 Gen Electric Five layer gate controlled thyristor with novel turn on characteristics
US3796881A (en) * 1972-04-28 1974-03-12 Westinghouse Electric Corp Encapsulated light activated semiconductor device
US3991460A (en) * 1973-08-29 1976-11-16 Westinghouse Electric Corporation Method of making a light activated semiconductor controlled rectifier
GB1454188A (sv) * 1973-12-03 1976-10-27
US3975758A (en) * 1975-05-27 1976-08-17 Westinghouse Electric Corporation Gate assist turn-off, amplifying gate thyristor and a package assembly therefor
US4008486A (en) * 1975-06-02 1977-02-15 International Rectifier Corporation Compression-assembled semiconductor device with nesting circular flanges and flexible locating ring

Also Published As

Publication number Publication date
GB1529145A (en) 1978-10-18
JPS53147489A (en) 1978-12-22
US4131905A (en) 1978-12-26
DE2808531A1 (de) 1978-11-30
CA1081370A (en) 1980-07-08

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