SE7900229L - Integrerad halvledarkrets samt sett att tillverka densamma - Google Patents

Integrerad halvledarkrets samt sett att tillverka densamma

Info

Publication number
SE7900229L
SE7900229L SE7900229A SE7900229A SE7900229L SE 7900229 L SE7900229 L SE 7900229L SE 7900229 A SE7900229 A SE 7900229A SE 7900229 A SE7900229 A SE 7900229A SE 7900229 L SE7900229 L SE 7900229L
Authority
SE
Sweden
Prior art keywords
manufacture
way
same
semiconductor circuit
integrated semiconductor
Prior art date
Application number
SE7900229A
Other languages
English (en)
Inventor
H Khajezadeh
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7900229L publication Critical patent/SE7900229L/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/15—Diffusion of dopants within, into or out of semiconductor bodies or layers from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/916—Autodoping control or utilization
SE7900229A 1978-02-15 1979-01-10 Integrerad halvledarkrets samt sett att tillverka densamma SE7900229L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/877,856 US4170501A (en) 1978-02-15 1978-02-15 Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition

Publications (1)

Publication Number Publication Date
SE7900229L true SE7900229L (sv) 1979-08-16

Family

ID=25370869

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7900229A SE7900229L (sv) 1978-02-15 1979-01-10 Integrerad halvledarkrets samt sett att tillverka densamma

Country Status (5)

Country Link
US (1) US4170501A (sv)
JP (1) JPS5585052A (sv)
DE (1) DE2904480B2 (sv)
IT (1) IT7919362A0 (sv)
SE (1) SE7900229L (sv)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567463A (en) * 1979-06-29 1981-01-26 Hitachi Ltd Semiconductor device and its manufacture
JPS5676560A (en) * 1979-11-28 1981-06-24 Hitachi Ltd Semiconductor device
JPS57136342A (en) * 1981-02-17 1982-08-23 Fujitsu Ltd Manufacture of semiconductor device
US4487653A (en) * 1984-03-19 1984-12-11 Advanced Micro Devices, Inc. Process for forming and locating buried layers
US5055417A (en) * 1987-06-11 1991-10-08 National Semiconductor Corporation Process for fabricating self-aligned high performance lateral action silicon-controlled rectifier and static random access memory cells
US5243214A (en) * 1992-04-14 1993-09-07 North American Philips Corp. Power integrated circuit with latch-up prevention
JP3353277B2 (ja) * 1992-09-25 2002-12-03 ソニー株式会社 エピタキシャルウェハの製造方法
JP2647057B2 (ja) * 1995-06-02 1997-08-27 日本電気株式会社 半導体装置
JP3409548B2 (ja) 1995-12-12 2003-05-26 ソニー株式会社 半導体装置の製造方法
US5731619A (en) * 1996-05-22 1998-03-24 International Business Machines Corporation CMOS structure with FETS having isolated wells with merged depletions and methods of making same
DE102017121693B4 (de) * 2017-09-19 2022-12-08 Infineon Technologies Ag Dotierungsverfahren

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL273009A (sv) * 1960-12-29
NL297821A (sv) * 1962-10-08
US3479233A (en) * 1967-01-16 1969-11-18 Ibm Method for simultaneously forming a buried layer and surface connection in semiconductor devices
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
FR2041710B1 (sv) * 1969-05-08 1974-06-14 Radiotechnique Compelec
US3582725A (en) * 1969-08-21 1971-06-01 Nippon Electric Co Semiconductor integrated circuit device and the method of manufacturing the same
BE758683A (fr) * 1969-11-10 1971-05-10 Ibm Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle
US3885998A (en) * 1969-12-05 1975-05-27 Siemens Ag Method for the simultaneous formation of semiconductor components with individually tailored isolation regions
DE2044863A1 (de) * 1970-09-10 1972-03-23 Siemens Ag Verfahren zur Herstellung von Schottkydioden
US4032372A (en) * 1971-04-28 1977-06-28 International Business Machines Corporation Epitaxial outdiffusion technique for integrated bipolar and field effect transistors
US3961340A (en) * 1971-11-22 1976-06-01 U.S. Philips Corporation Integrated circuit having bipolar transistors and method of manufacturing said circuit
JPS51116687A (en) * 1975-04-07 1976-10-14 Hitachi Ltd Semiconductor integrated circuit device
JPS51132784A (en) * 1975-05-14 1976-11-18 Hitachi Ltd Production method of semiconductor device
JPS5261976A (en) * 1975-11-18 1977-05-21 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device and its production

Also Published As

Publication number Publication date
JPS5585052A (en) 1980-06-26
US4170501A (en) 1979-10-09
DE2904480B2 (de) 1981-02-19
DE2904480A1 (de) 1979-08-16
IT7919362A0 (it) 1979-01-17

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