TW415085B - Semiconductor memory with strip-shaped cell-plate - Google Patents

Semiconductor memory with strip-shaped cell-plate Download PDF

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Publication number
TW415085B
TW415085B TW088103609A TW88103609A TW415085B TW 415085 B TW415085 B TW 415085B TW 088103609 A TW088103609 A TW 088103609A TW 88103609 A TW88103609 A TW 88103609A TW 415085 B TW415085 B TW 415085B
Authority
TW
Taiwan
Prior art keywords
cell
memory
cells
billion
trench
Prior art date
Application number
TW088103609A
Other languages
English (en)
Chinese (zh)
Inventor
Richard Owen
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW415085B publication Critical patent/TW415085B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Memories (AREA)
TW088103609A 1998-03-25 1999-03-09 Semiconductor memory with strip-shaped cell-plate TW415085B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813169A DE19813169A1 (de) 1998-03-25 1998-03-25 Halbleiterspeicher mit streifenförmiger Zellplatte

Publications (1)

Publication Number Publication Date
TW415085B true TW415085B (en) 2000-12-11

Family

ID=7862297

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088103609A TW415085B (en) 1998-03-25 1999-03-09 Semiconductor memory with strip-shaped cell-plate

Country Status (4)

Country Link
US (1) US6388283B1 (de)
EP (1) EP0945903A3 (de)
DE (1) DE19813169A1 (de)
TW (1) TW415085B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10245538B4 (de) * 2002-09-30 2006-10-26 Infineon Technologies Ag Speicherzellenanordnung für einen DRAM-Speicher mit einem Kontaktbitanschluss für zwei Grabenkondensatoren verschiedener Reihen
US6831320B2 (en) 2002-09-30 2004-12-14 Infineon Technologies Ag Memory cell configuration for a DRAM memory with a contact bit terminal for two trench capacitors of different rows
US20070085152A1 (en) * 2005-10-14 2007-04-19 Promos Technologies Pte.Ltd. Singapore Reduced area dynamic random access memory (DRAM) cell and method for fabricating the same
US20120037211A1 (en) * 2009-04-15 2012-02-16 Sunovel (Shzhou) Technologies Limited Thin Film of Solar Battery Structure, Thin Film of Solar Array and Manufacturing Method Thereof
CN102568558B (zh) * 2012-02-28 2017-12-08 上海华虹宏力半导体制造有限公司 存储器的操作方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6155957A (ja) * 1984-08-27 1986-03-20 Toshiba Corp 半導体記憶装置
JPH0793365B2 (ja) * 1984-09-11 1995-10-09 株式会社東芝 半導体記憶装置およびその製造方法
JPH0714006B2 (ja) * 1985-05-29 1995-02-15 株式会社東芝 ダイナミツク型メモリ
JPS62150879A (ja) * 1985-12-25 1987-07-04 Mitsubishi Electric Corp 半導体記憶装置
DE3838675A1 (de) * 1988-11-15 1990-05-17 Degussa Amorphes aluminiumoxid, verfahren zu seiner herstellung und verwendung
JPH02137364A (ja) 1988-11-18 1990-05-25 Toshiba Corp 半導体記憶装置
JPH03171663A (ja) * 1989-11-29 1991-07-25 Toshiba Corp 半導体記憶装置およびその製造方法
JP3159496B2 (ja) * 1991-01-14 2001-04-23 松下電子工業株式会社 半導体メモリ装置
JPH04328860A (ja) * 1991-04-30 1992-11-17 Hitachi Ltd 半導体集積回路装置及びその製造方法
KR950012731A (ko) * 1993-10-25 1995-05-16 사토 후미오 반도체기억장치 및 그 제조방법
JPH08293586A (ja) * 1995-04-25 1996-11-05 Nippon Steel Corp 半導体記憶装置及びその製造方法
JPH0982911A (ja) * 1995-09-12 1997-03-28 Toshiba Corp ダイナミック型半導体記憶装置
US6211544B1 (en) * 1999-03-18 2001-04-03 Infineon Technologies North America Corp. Memory cell layout for reduced interaction between storage nodes and transistors

Also Published As

Publication number Publication date
US6388283B1 (en) 2002-05-14
DE19813169A1 (de) 1999-10-07
EP0945903A3 (de) 2003-08-06
EP0945903A2 (de) 1999-09-29

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