USRE43948E1 - Formation of contacts on semiconductor substrates - Google Patents

Formation of contacts on semiconductor substrates Download PDF

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Publication number
USRE43948E1
USRE43948E1 US12/978,401 US97840103A USRE43948E US RE43948 E1 USRE43948 E1 US RE43948E1 US 97840103 A US97840103 A US 97840103A US RE43948 E USRE43948 E US RE43948E
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Prior art keywords
conductive
layer
contacts
passivation
conductive contacts
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Kimmo Puhakka
Ian Benson
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Siemens Healthcare GmbH
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Siemens AG
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/022—Manufacture or treatment of image sensors covered by group H10F39/12 of image sensors having active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1895—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers

Definitions

  • the invention relates to methods of manufacturing radiation detectors and radiation imaging devices, radiation detectors and imaging devices manufactured by these methods and the use of such imaging devices.
  • a radiation detector for an imaging device typically comprises a semiconductor substrate with a pattern or array of conductive contacts on one surface of the substrate defining an arrangement of detector cells.
  • Various semiconductor materials can be used in radiation detectors.
  • silicon has typically been used for the semiconductor substrate material
  • cadmium zinc telluride (CdZnTe), cadmium telluride (CdTe), titanium bromide (TiBr), mercury iodide (HgI) and gallium nitride (GaN) can be used as substrate material in X-ray, gamma-ray and to a lesser extent beta-ray radiation imaging.
  • Such detector substrates need to be processed to produce a detector having a pattern of conductive contacts (e.g. pixel pads) on one surface, so that the detector may be position sensitive; that is, to ensure that the detector can produce a detector output indicating the position at which radiation impacts the detector.
  • conductive contacts e.g. pixel pads
  • a readout chip then can be ‘flip-chip’ joined to the patterned side of the detector (e.g., by bump bonding using low temperature soldering with tin lead bismuth (PbSnBi) alloy solder or using balls of indium or conductive polymer material, gluing using conductive materials or other conductive adhesive layer techniques) so that the position dependent electrical signals which result from incidence and absorption in the detector cells of beta-rays, X-rays or gamma-rays for example, can be processed.
  • PbSnBi tin lead bismuth
  • problems have been observed with certain characteristics of the conductive contacts. These include the conductive contacts having poor adhesion properties and shorter than desired life times. Shorter than desirable life times have been observed when radiation detectors are joined to a readout chip in a radiation imaging device, via a bump bonding technique using either a lead-based or a lead-free solder, for example.
  • a radiation detector having one or more conductive contacts on a semiconductor substrate including the steps of:
  • the conductive contacts defining one or more radiation detector cells in the semiconductor substrate.
  • the first layer is a contact layer and the second layer is a diffusion barrier layer, which means that embodiments can provide particularly good chemical contact with the substrate (via the contact layer) and improved lifetime (via the diffusion barrier layer).
  • the conductive contacts additionally include either or both of a third conductive layer and a further conductive layer, the third being sandwiched between the first and second layers and the further being adjacent the second layer.
  • the third layer acts as an adhesion layer, whilst the further layer acts as a wetting agent for the bump bonding.
  • the diffusion barrier (second) layer prevents bump bond material (e.g. PbSnBi solder) from diffusing into layers beyond the diffusion barrier layer, which is detrimental to the lifetime of the detector.
  • the conductive layers are applied by methods such as sputtering, evaporation, electrolytic deposition, or electroless deposition (e.g. chemical deposition), before any subsequent layers are formed.
  • sputtering evaporation
  • electrolytic deposition e.g. electrolytic deposition
  • electroless deposition e.g. chemical deposition
  • the method of forming the plurality of contiguous layers of conductive materials involves:
  • metal etchants suitable for removing gold and/or platinum, for example.
  • the electrical separation of the individual contacts which result from some known methods of forming such contacts is not as good as would be expected from the properties of that material before treatment.
  • metal etchants need not be used, thus avoiding the damage which would result if the metal etchants came into contact with the semiconductor surface.
  • the method includes forming a layer of passivation material on said conductive contacts and the regions around conductive contacts;
  • the removal of portions of said passivation material overlying said conductive contacts to expose the conductive contacts can involve: forming a further layer of photoresistive material over said passivation layer; selectively exposing regions of said further layer of photoresistive material; and removing portions of the further photoresistive material corresponding to the exposed regions so as to expose portions of said passivation layer corresponding to said contact positions.
  • the exposed portions of passivation layer are then removed, and finally any remaining further photoresistive material is also removed.
  • An advantage of applying the further layer of photoresistive material is that areas of varying size, specifically, smaller or larger than the contact positions, can be exposed, which means that portions of the layer of passivation material can be removed from areas smaller than the conductive contacts. After this removal of portions of said passivation layer, the passivation material can overlap with the conductive contacts. This means that the passivation material may be applied over portions of the conductive contacts, providing good mechanical contact, and reducing the possibility of gaps being formed between the conductive material and passivation material.
  • the further photoresistive material is removed from areas of passivation material in order to expose said areas in a desired pattern for forming conductive tracks.
  • photoresistive material can additionally be applied to all exposed surfaces as well as the surface on which the conductive contacts are formed.
  • the first and second layers comprise different metals, while the third and further layers comprise the same metal.
  • the contact (first) layer comprises platinum; the adhesion (third) layer comprises gold, the diffusion barrier (second) layer comprises nickel and the wetting agent (further) layer comprises gold.
  • Each conductive contact so formed can define a respective pixel cell of an array of pixel cells, or one of a plurality of strips arranged parallel to each other.
  • Pixel contacts formed on detector substrate are preferably substantially circular and are arranged in a plurality of rows, more preferably with alternate rows preferably being offset from adjacent rows.
  • conductive contacts can be from about 5 ⁇ m to about 100 ⁇ m across with a pitch from about 7 ⁇ m to about 500 ⁇ m.
  • the conductive contacts are of the order of 15 ⁇ m across with a pitch of the order of 35 ⁇ m.
  • a radiation detector having a semiconductor substrate comprising:
  • the conductive contacts defining one or more radiation detector cells in the semiconductor substrate
  • each of the conductive contacts comprises a plurality of contiguous layers of conductive materials comprising a first conductive layer and a second conductive layer.
  • a radiation detector in accordance with this second aspect of the invention finds particular, but not exclusive, application for X-ray, gamma-ray and beta-ray imaging, and one particular embodiment of the invention can provide a method for manufacturing detectors (e.g. a cadmium based substrate such as CdTe or CdZnTe) with one side uniformly metallised with a metal such as indium or platinum and the other side patterned with conductive contacts structures (e.g. a platinum/gold/nickel/gold stack) in a manner that does not adversely affect the surface characteristics of the substrate around or in between the contacts.
  • detectors e.g. a cadmium based substrate such as CdTe or CdZnTe
  • conductive contacts structures e.g. a platinum/gold/nickel/gold stack
  • a method can be provided for creating conductive structures on one side of a detector, the method achieving inter-structure resistivity of the order of G ⁇ /square or tens or hundreds of G ⁇ /square.
  • the conductive contact structures can be patterned to provide readout tracks, for example.
  • the radiation detector includes an electrically insulating passivation layer between contacts distributed on the semiconductor substrate, which enables the area between metal contacts to be protected, thus giving the detector stable performance over time and avoiding effects such as oxidation which increase the surface leakage current and decrease the inter-contact resistivity.
  • Aluminium nitride (AlN) passivation has been found to be particularly effective when applied between gold contacts to protect the surface and enhance the electrical separation of the gold contacts.
  • the passivation layer of aluminium nitride can be implemented at relatively low temperatures typically less than 100° C.
  • silicon oxide (SiO 2 ) which is typically used as a passivant for silicon (Si) semiconductors, needs temperatures in excess of 200° C. After exposure to these temperatures, CdZnTe would be unusable.
  • Embodiments in accordance with the present invention may be used to define areas or regions away from, yet operatively related to, contact positions. This is particularly advantageous and is intended for use in manufacturing high energy (IKeV) radiation imaging devices since it allows more complex conductive material patterns to be formed (e.g. for spatially off-setting a charge collection contact of a detector cell relative to a corresponding contact of a read-out substrate cell).
  • IKeV high energy
  • a radiation detector comprising a semiconductor substrate for detecting radiation with a plurality of conductive contacts for respective radiation detector cells on a first surface thereof and a layer of conductive material on a surface of said substrate opposite to said first surface, wherein the exposed width of a said conductive contact is smaller that the overall width of said contact adjacent said substrate, and wherein the conductive contacts comprise a plurality of contiguous metallic layers.
  • FIGS. 1A-1J are schematic diagrams showing an example of a method of forming metal contacts on a semiconductor substrate with a passivation layer between contacts according to an embodiment of the invention
  • FIGS. 2A and 2B are schematic diagrams showing examples of detector substrates manufactured according to an embodiment of the invention.
  • FIG. 3 is a schematic plan view of a contact configuration on a detector substrate
  • FIG. 4 is a schematic plan view of another contact configuration on a detector substrate
  • FIG. 5 is a schematic plan view of a further contact configuration on a detector substrate.
  • FIG. 6 is a schematic cross-section of a radiation imaging device manufactured according to an embodiment of the invention.
  • FIGS. 1A-1J show the steps involved in forming conductive contacts on a semiconductor substrate according to an embodiment of the invention.
  • the contacts define discrete radiation detector cells, which have a layer of passivation material between the detector cells.
  • the semiconductor substrate may be made of any suitable semiconductor material including, but not limited to, cadmium zinc telluride (CdZnTe), cadmium telluride (CdTe), lead iodide, thallium bromide, gallium arsenide or silicon.
  • the material used for the conductive layer and the contacts comprise a sequence or stack of layers of two or more different metals.
  • FIGS. 1A-1J is a schematic cross-sectional view from the side of a detector substrate at various stages in the formation of conductive contacts on a semiconductor substrate.
  • photoresist may additionally be applied to the sides and/or the lower face of the detector to provide protection during the process described above (e.g. at step B); any additional photoresist on the sides can then be removed at a later stage (e.g. at step J).
  • cadmium zinc telluride or cadmium telluride is used as the semiconductor substrate 1 and a platinum or indium metallisation layer is used as the conductive material 2 on the lower face of the detector in step A.
  • the conductive layers 8 , 9 in step D are formed by evaporation or electroless deposition of platinum and PVD sputtering of gold to form a stack or sequence of platinum and gold with the platinum formed on the substrate surface and the gold formed on the platinum.
  • the passivation material 14 in step F is sputtered aluminium nitride formed by phase vapour deposition. In step I an alkali solution is used to etch the aluminium nitride.
  • the end result is a cadmium zinc telluride/cadmium telluride substrate 30 , a platinum or indium layer 32 , an aluminium nitride passivation layer 34 , and conductive contacts formed as a stack of platinum and gold layers 36 , 38 .
  • cadmium zinc telluride or cadmium telluride is used as the semiconductor substrate 1
  • an indium metallisation layer is used as the conductive material 2 on the lower face of the detector in step A.
  • the conductive layers 8 , 9 in step D form a stack of platinum, gold, nickel and gold.
  • the passivation material 14 in step F is sputtered aluminium nitride formed by phase vapour deposition.
  • alkali solution is used to etch the aluminium nitride.
  • a cadmium zinc telluride/cadmium zinc substrate 40 an aluminium nitride passivation layer 44 and conductive contacts formed as a stack of platinum, gold, nickel and gold 45 , 46 , 47 , 48 .
  • This example corresponds to Example 2 except that the conductive contacts are formed as a stack of platinum 45 , gold 46 , indium 47 and gold 48 .
  • cadmium zinc telluride or cadmium telluride is used as the semiconductor substrate 1
  • a platinum metallisation layer is used as the conductive material 2 on the lower face of the detector in step A.
  • the conductive layers 8 , 9 in step D comprise a stack of nickel and gold.
  • the passivation material 14 in step F is sputtered aluminium nitride formed by phase vapour deposition. In step I alkali solution is used to etch the aluminium nitride.
  • the end result comprises a cadmium zinc telluride/cadmium zinc substrate 50 , a platinum layer 52 , an aluminium nitride passivation layer 54 and conductive contacts formed as a stack of nickel 55 and gold 56 .
  • stacks of platinum/gold/nickel; platinum/gold; indium/gold; chrome/copper/gold and platinum/titanium-tungsten alloy/gold are used.
  • Embodiments of the invention produce a detector with a lower face having a uniform conductive layer (e.g. a metallised layer such as a gold layer) and an upper face having conductive contacts in a desired pattern, and avoids the introduction of impurities from the passivation material and/or passivation etchant (e.g. aluminium nitride etchant) between the semiconductor substrate and the conductive contacts and into the conductive layer.
  • the method eradicates the need to apply an etchant to the conductive layers (e.g. a gold etchant), and ensures that there is no contact between the passivation etchant and the substrate surface in the area between the conductive contacts or the edges and sides of the detector.
  • the surface of the substrate between the conductive contacts remains unharmed, retaining very high resistivity of the order of G ⁇ /square, tens, hundreds or even thousands of G ⁇ /square and very low surface leakage current.
  • High resistivity between conductive contacts is desirable in order to achieve long integration standby or readout times of the signal created from impinging X-rays or gamma-rays, for example, without deterioration of the image resolution.
  • passivation material e.g. Aluminium nitride
  • the corresponding regions are protected from oxidation (providing stability over time), which enhances the inter-contact resistivity. Since the passivation material overlaps with the conductive contacts, there are no gaps on the semiconductor substrate surface, which increases the mechanical stability of the detector.
  • contact pads up to about 100 ⁇ m across with up to about 500 ⁇ m pitch in between can be readily obtained, while retaining very high inter pixel resistivity.
  • FIGS. 3 , 4 and 5 illustrate possible contact patterns of metal contacts on the upper surface of the detector substrate.
  • FIG. 3 an array of square contact pads is shown, while FIG. 4 shows an array of circular contact pads.
  • FIG. 5 illustrates an array of offset (honeycombed) pixel pads, and it can be seen that, in comparison with the regular spacing shown in FIG. 4 , offsetting metal contacts with respect to one another increases the amount of resistive material between adjacent pads, thereby increasing the resistance between contacts.
  • the metal contacts are not rectangular (the length of the contact, in a direction parallel to the plane of the substrate, of the exposed face is smaller than that of the face adjacent the substrate surface). This is due to the relative sizes of the openings to the contacts and of the contacts themselves and has the advantage that, when portions of the passivation material above the contacts are etched away, the etchant will not seep through to the interface between the passivation layer and the conductive contacts.
  • FIG. 6 is a schematic cross section of part of a radiation imaging device 60 .
  • the radiation imaging device 60 comprises a radiation detector 62 and a readout chip 64 for reading charge from the conductive contacts 12 of the radiation detector 62 .
  • the radiation detector 62 comprises conductive contacts 12 , which comprise a plurality of contiguous conductive layers, on one surface (the upper surface in FIG. 6 ) of a semiconductor substrate 1 and a layer of conductive material 2 on another surface (the lower surface in FIG. 6 ) of the semiconductor substrate 1 .
  • the readout chip 64 comprises circuitry for reading charge from the contacts 12 in the form of respective readout circuits 66 .
  • Readout circuits 66 are joined to respective contacts 12 via bonds 68 and may be ‘flip-chip’ joined (e.g., by bump bonding using low temperature soldering with tin lead bismuth (PbSnBi) alloy solder or using balls of indium or conductive polymer material, gluing using conductive materials, or other conductive adhesive layer techniques) to respective circuits.
  • bonds 68 may be ‘flip-chip’ joined (e.g., by bump bonding using low temperature soldering with tin lead bismuth (PbSnBi) alloy solder or using balls of indium or conductive polymer material, gluing using conductive materials, or other conductive adhesive layer techniques) to respective circuits.
  • the continuous conductive layer or electrode 2 and the conductive contacts 12 of the radiation imaging device 60 define detector cells 70 .
  • Corresponding readout circuits 66 for each detector cell are defined at locations corresponding to the detector cells 70 .
  • the readout circuits 66 are electrically connected to the corresponding contacts 12 by bonds 68 which form a conductive pathway. In this manner when charge is generated in a detector cell 70 in response to incident radiation, this charge is passed via the bond 68 to the corresponding readout circuit 66 .
  • the readout chip may be any suitable readout chip.
  • the readout chip may be of the pulse counting type (e.g. photon counting) or one of the type which provides for charge accumulation for individual detector cells, such as that described in PCT/EP95/02056.
  • the readout chip may comprise one or more of: charge accumulation circuitry; counter circuitry; readout circuitry; energy discriminator circuitry; pulse shaping circuitry; pulse amplifying circuitry; analogue to digital converter circuitry; or rate divider circuitry.
  • the invention teaches how to obtain a radiation detector (e.g. based on a CdZnTe substrate) with one side metallised according to a desired pattern with maximum possible electrical resistivity separation between the metal contacts.
  • High resistivity between metal contacts is desirable to improve contrast resolution and eliminate signal leakage between adjacent metal contacts on the substrate surface. This is particularly relevant when long charge accumulation times and long standby/readout times are employed by the readout chip. Such accumulation and standby/readout times could, for example, be in excess of 1 msec in examples of imaging devices using a radiation detector manufactured in accordance with the present invention.
  • imaging devices find application, for example, for X-ray, gamma-ray and beta-ray imaging as described in the applicant's International Patent Application PCT/EP 95/02056 incorporated herein by reference.

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  • Solid State Image Pick-Up Elements (AREA)
US12/978,401 2002-10-23 2003-10-23 Formation of contacts on semiconductor substrates Expired - Fee Related USRE43948E1 (en)

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GBGB0224689.0A GB0224689D0 (en) 2002-10-23 2002-10-23 Formation of contacts on semiconductor substrates
GB0224689.0 2002-10-23
PCT/GB2003/004577 WO2004038809A2 (en) 2002-10-23 2003-10-23 Formation of contacts on semiconductor substrates
US12/978,401 USRE43948E1 (en) 2002-10-23 2003-10-23 Formation of contacts on semiconductor substrates
US10/532,118 US7767487B2 (en) 2002-10-23 2003-10-23 Formation of contacts on semiconductor substrates

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EP (1) EP1554759B1 (de)
JP (1) JP2006504257A (de)
CN (1) CN100438080C (de)
AU (1) AU2003274369A1 (de)
GB (1) GB0224689D0 (de)
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GB0611619D0 (en) * 2006-06-12 2006-07-19 Radiation Watch Ltd Lead iodide deposition method
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DE102006046314A1 (de) * 2006-09-29 2008-04-03 Siemens Ag Strahlungsdirektkonvertermodul und Strahlungsdirektkonverter
US7589324B2 (en) * 2006-12-21 2009-09-15 Redlen Technologies Use of solder mask as a protective coating for radiation detector
KR100793970B1 (ko) * 2007-03-12 2008-01-16 삼성전자주식회사 Ｚｎ을 이용하는 솔더링 구조물 및 솔더링 방법
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WO2016002455A1 (ja) * 2014-07-03 2016-01-07 Jx日鉱日石金属株式会社 放射線検出器用ｕｂｍ電極構造体、放射線検出器及びその製造方法
US9847369B2 (en) 2015-02-17 2017-12-19 Redlen Technologies, Inc. High-performance radiation detectors and methods of fabricating thereof
DE102015104236B4 (de) * 2015-03-20 2021-11-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Solarzelle
EP3658962A4 (de) 2017-07-26 2021-02-17 Shenzhen Xpectvision Technology Co., Ltd. Strahlungsdetektor und verfahren zur herstellung davon
FR3089685B1 (fr) * 2018-12-10 2020-11-20 Ulis Procede de realisation d’un detecteur infrarouge et detecteur infrarouge associe
CN116207182B (zh) * 2023-01-29 2024-03-12 北京智创芯源科技有限公司 芯片制备方法及电子器件

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