WO2003103056A3 - Dispositif semi-conducteur a tranchee/grille - Google Patents

Dispositif semi-conducteur a tranchee/grille Download PDF

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Publication number
WO2003103056A3
WO2003103056A3 PCT/IB2003/002233 IB0302233W WO03103056A3 WO 2003103056 A3 WO2003103056 A3 WO 2003103056A3 IB 0302233 W IB0302233 W IB 0302233W WO 03103056 A3 WO03103056 A3 WO 03103056A3
Authority
WO
WIPO (PCT)
Prior art keywords
trench
drain
gate
semiconductor device
breakdown voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2003/002233
Other languages
English (en)
Other versions
WO2003103056A2 (fr
Inventor
Steven T Peake
Philip Rutter
Raymond J Grover
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB0212564.9A external-priority patent/GB0212564D0/en
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Priority to US10/515,748 priority Critical patent/US7122860B2/en
Priority to JP2004510038A priority patent/JP2005528804A/ja
Priority to KR10-2004-7019300A priority patent/KR20050006283A/ko
Priority to EP03725542A priority patent/EP1525621B1/fr
Priority to AU2003228073A priority patent/AU2003228073A1/en
Priority to AT03725542T priority patent/ATE528799T1/de
Publication of WO2003103056A2 publication Critical patent/WO2003103056A2/fr
Publication of WO2003103056A3 publication Critical patent/WO2003103056A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

L'invention porte sur un dispositif semi-conducteur à tranchée/grille par exemple du type MOSFET ou IGBT, comportant un corps (20) semi-conducteur dont la région (4) drain comprend une région de dérive (4a) et une région de contact (4b). une plaque de champ (24) isolée, inclue dans la tranchée (10) entre la grille (8) et la région de contact (4b) du drain, est connectée à un potentiel de polarisation supérieur au potentiel de grille et voisin de la tension globale de claquage de la région de contact (4b) du drain. La plaque de champ (24) permet une répartition beaucoup plus uniforme de la chute de tension dans la région de dérive du drain (4a), en particulier pour des tensions appliquées dépassant la tension globale de claquage, ce qui accroît sensiblement la tension de claquage du dispositif.
PCT/IB2003/002233 2002-05-31 2003-05-21 Dispositif semi-conducteur a tranchee/grille Ceased WO2003103056A2 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US10/515,748 US7122860B2 (en) 2002-05-31 2003-05-21 Trench-gate semiconductor devices
JP2004510038A JP2005528804A (ja) 2002-05-31 2003-05-21 トレンチ・ゲート半導体装置
KR10-2004-7019300A KR20050006283A (ko) 2002-05-31 2003-05-21 트렌치-게이트 반도체 디바이스와 그의 작동 방법 및트렌치-게이트 반도체 디바이스를 포함하는 모듈 및 장치
EP03725542A EP1525621B1 (fr) 2002-05-31 2003-05-21 Méthode d'opération d'un dispositif semi-conducteur à grille en tranchée
AU2003228073A AU2003228073A1 (en) 2002-05-31 2003-05-21 Trench-gate semiconductor device,corresponding module and apparatus ,and method of operating the device
AT03725542T ATE528799T1 (de) 2002-05-31 2003-05-21 Verfahren zum betreiben einer halbleiteranordnung mit graben-gate

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GBGB0212564.9A GB0212564D0 (en) 2002-05-31 2002-05-31 Trench-gate semiconductor device
GB0212564.9 2002-05-31
GB0228809.0 2002-12-11
GBGB0228809.0A GB0228809D0 (en) 2002-05-31 2002-12-11 Trench-gate semiconductor devices

Publications (2)

Publication Number Publication Date
WO2003103056A2 WO2003103056A2 (fr) 2003-12-11
WO2003103056A3 true WO2003103056A3 (fr) 2004-02-05

Family

ID=29713387

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2003/002233 Ceased WO2003103056A2 (fr) 2002-05-31 2003-05-21 Dispositif semi-conducteur a tranchee/grille

Country Status (5)

Country Link
US (1) US7122860B2 (fr)
EP (1) EP1525621B1 (fr)
JP (1) JP2005528804A (fr)
AU (1) AU2003228073A1 (fr)
WO (1) WO2003103056A2 (fr)

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US12376334B2 (en) 2021-10-15 2025-07-29 Infineon Technologies Dresden GmbH & Co. KG Semiconductor device

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US7638841B2 (en) * 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
DE10339455B3 (de) * 2003-08-27 2005-05-04 Infineon Technologies Ag Vertikales Halbleiterbauelement mit einer eine Feldelektrode aufweisenden Driftzone und Verfahren zur Herstellung einer solchen Driftzone
GB0327792D0 (en) * 2003-11-29 2003-12-31 Koninkl Philips Electronics Nv Trench insulated gate field effect transistor
TWI222685B (en) * 2003-12-18 2004-10-21 Episil Technologies Inc Metal oxide semiconductor device and fabricating method thereof
US7405452B2 (en) * 2004-02-02 2008-07-29 Hamza Yilmaz Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics
US20050199918A1 (en) * 2004-03-15 2005-09-15 Daniel Calafut Optimized trench power MOSFET with integrated schottky diode
JP2005340626A (ja) * 2004-05-28 2005-12-08 Toshiba Corp 半導体装置
DE102004029435B4 (de) * 2004-06-18 2017-02-16 Infineon Technologies Ag Feldplattentrenchtransistor
JP5259920B2 (ja) * 2004-08-04 2013-08-07 ローム株式会社 半導体装置およびその製造方法
DE102004044619B4 (de) * 2004-09-13 2009-07-16 Infineon Technologies Ag Kondensatorstruktur in Grabenstrukturen von Halbleiterbauteilen und Halbleiterbauteile mit derartigen Kondensatorstrukturen und Verfahren zur Herstellung derselben
AT504998A2 (de) 2005-04-06 2008-09-15 Fairchild Semiconductor Trenched-gate-feldeffekttransistoren und verfahren zum bilden derselben
JP4955222B2 (ja) 2005-05-20 2012-06-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2008546189A (ja) 2005-05-26 2008-12-18 フェアチャイルド・セミコンダクター・コーポレーション トレンチゲート電界効果トランジスタ及びその製造方法
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
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US7476932B2 (en) * 2006-09-29 2009-01-13 The Boeing Company U-shape metal-oxide-semiconductor (UMOS) gate structure for high power MOS-based semiconductor devices
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US8198678B2 (en) 2009-12-09 2012-06-12 Infineon Technologies Austria Ag Semiconductor device with improved on-resistance
JP6008377B2 (ja) * 2010-03-03 2016-10-19 ルネサスエレクトロニクス株式会社 Ｐチャネル型パワーｍｏｓｆｅｔ
JP5674530B2 (ja) * 2010-09-10 2015-02-25 ルネサスエレクトロニクス株式会社 半導体装置の制御装置
JP2012204636A (ja) * 2011-03-25 2012-10-22 Toshiba Corp 半導体装置およびその製造方法
US8981748B2 (en) 2011-08-08 2015-03-17 Semiconductor Components Industries, Llc Method of forming a semiconductor power switching device, structure therefor, and power converter
US8642425B2 (en) 2012-05-29 2014-02-04 Semiconductor Components Industries, Llc Method of making an insulated gate semiconductor device and structure
US9202882B2 (en) 2013-05-16 2015-12-01 Infineon Technologies Americas Corp. Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
JP2015142073A (ja) * 2014-01-30 2015-08-03 サンケン電気株式会社 半導体装置
US9413348B2 (en) 2014-07-29 2016-08-09 Semiconductor Components Industries, Llc Electronic circuit including a switch having an associated breakdown voltage and a method of using the same
JP2016063048A (ja) * 2014-09-17 2016-04-25 富士電機株式会社 トレンチ型絶縁ゲートバイポーラトランジスタ及びその製造方法
JP2016163019A (ja) * 2015-03-05 2016-09-05 株式会社東芝 半導体装置
CN107636836B (zh) * 2015-12-11 2020-11-27 富士电机株式会社 半导体装置
DE102016103587B4 (de) * 2016-02-29 2020-12-03 Infineon Technologies Ag Halbleitervorrichtung mit Hilfselektrodenpins
JP6830390B2 (ja) * 2017-03-28 2021-02-17 エイブリック株式会社 半導体装置
JP7250473B2 (ja) * 2018-10-18 2023-04-03 三菱電機株式会社 半導体装置
FR3096832B1 (fr) 2019-05-28 2022-05-13 St Microelectronics Rousset Structure de transistor
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EP4197026B1 (fr) * 2020-08-13 2025-07-02 Texas Instruments Incorporated Procédé de fabrication de dispositif à semi-conducteur comprenant un isolateur latéral
WO2022036598A1 (fr) * 2020-08-19 2022-02-24 华为技术有限公司 Drmos, circuit intégré, dispositif électronique et procédé de fabrication
JP7394038B2 (ja) * 2020-09-11 2023-12-07 株式会社東芝 半導体装置
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EP1170803A2 (fr) * 2000-06-08 2002-01-09 Siliconix Incorporated MOSFET à grille en tranchée et sa méthode de fabrication
WO2002013257A2 (fr) * 2000-08-04 2002-02-14 Infineon Technologies Ag Element de commutation a semi-conducteurs comportant deux electrodes de commande et pouvant etre commande par effet de champ
DE10212149A1 (de) * 2002-03-19 2003-10-16 Infineon Technologies Ag Transistoranordnung mit Schirmelektrode außerhalb eines aktiven Zellenfeldes und reduzierter Gate-Drain-Kapazität

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Publication number Priority date Publication date Assignee Title
US12376334B2 (en) 2021-10-15 2025-07-29 Infineon Technologies Dresden GmbH & Co. KG Semiconductor device

Also Published As

Publication number Publication date
EP1525621A2 (fr) 2005-04-27
AU2003228073A8 (en) 2003-12-19
EP1525621B1 (fr) 2011-10-12
US20050173758A1 (en) 2005-08-11
JP2005528804A (ja) 2005-09-22
AU2003228073A1 (en) 2003-12-19
US7122860B2 (en) 2006-10-17
WO2003103056A2 (fr) 2003-12-11

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