WO2002041404A3 - Transistors a effet de champ comportant une tranchee et une grille et leur fabrication - Google Patents

Transistors a effet de champ comportant une tranchee et une grille et leur fabrication Download PDF

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Publication number
WO2002041404A3
WO2002041404A3 PCT/EP2001/013420 EP0113420W WO0241404A3 WO 2002041404 A3 WO2002041404 A3 WO 2002041404A3 EP 0113420 W EP0113420 W EP 0113420W WO 0241404 A3 WO0241404 A3 WO 0241404A3
Authority
WO
WIPO (PCT)
Prior art keywords
gate
trench
electrode
transistor
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2001/013420
Other languages
English (en)
Other versions
WO2002041404A2 (fr
Inventor
Raymond J Grover
Steven T Peake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Priority to DE60127166T priority Critical patent/DE60127166T2/de
Priority to EP01996888A priority patent/EP1340263B1/fr
Priority to JP2002543705A priority patent/JP4087248B2/ja
Publication of WO2002041404A2 publication Critical patent/WO2002041404A2/fr
Publication of WO2002041404A3 publication Critical patent/WO2002041404A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

Transistor à effet de champ comportant une tranchée et une grille, par exemple, des MOSFET puissants,et présentant des configurations d'électrodes (11, 23) placées dans une tranchée afin d'effectuer une commutation rapide, tout en exerçant une protection contre les surtensions pour le diélectrique de grille (21), ce facilite leur fabrication. L'électrode de grille (1) est composée d'un matériau semi-conducteur possédant un type de conductivité (n) présent dans une partie supérieure d'une tranchée isolée (20, 21) plus profonde s'étendant vers l'intérieur d'une zone de drain (14, 14a) du transistor. Une électrode inférieure (23) couplée à une source (13, 33) du transistor est placée dans la partie inférieure de la tranchée. Cette électrode inférieure (23) est composée d'un matériau semi-conducteur d'un type de conductivité opposée (p) rejoignant le matériau semi-conducteur de l'électrode de grille (11) afin de créer une jonction p-n (31) entre l'électrode de grille (11) et l'électrode inférieure (23). Cette jonction p-n (31) constitue une diode de protection (D) entre l'électrode de grille (11) et la source (13, 33). L'électrode de grille (11) est protégée de la majeure partie de la zone de drain par l'électrode inférieure (23), ce qui diminue la capacité grille-drain et améliore la vitesse de commutation du transistor.
PCT/EP2001/013420 2000-11-17 2001-11-16 Transistors a effet de champ comportant une tranchee et une grille et leur fabrication Ceased WO2002041404A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE60127166T DE60127166T2 (de) 2000-11-17 2001-11-16 Graben-gate-feldeffekttransistoren und ihre herstellung
EP01996888A EP1340263B1 (fr) 2000-11-17 2001-11-16 Transistors a effet de champ comportant une tranchee et une grille et leur fabrication
JP2002543705A JP4087248B2 (ja) 2000-11-17 2001-11-16 トレンチゲート電界効果トランジスタ及びその製法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0028031.3A GB0028031D0 (en) 2000-11-17 2000-11-17 Trench-gate field-effect transistors and their manufacture
GB0028031.3 2000-11-17

Publications (2)

Publication Number Publication Date
WO2002041404A2 WO2002041404A2 (fr) 2002-05-23
WO2002041404A3 true WO2002041404A3 (fr) 2002-10-10

Family

ID=9903324

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/013420 Ceased WO2002041404A2 (fr) 2000-11-17 2001-11-16 Transistors a effet de champ comportant une tranchee et une grille et leur fabrication

Country Status (8)

Country Link
US (1) US6566708B1 (fr)
EP (1) EP1340263B1 (fr)
JP (1) JP4087248B2 (fr)
KR (1) KR100816253B1 (fr)
AT (1) ATE356439T1 (fr)
DE (1) DE60127166T2 (fr)
GB (1) GB0028031D0 (fr)
WO (1) WO2002041404A2 (fr)

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DE10203164B4 (de) 2002-01-28 2005-06-16 Infineon Technologies Ag Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung
DE10211543B4 (de) * 2002-03-15 2005-06-30 Infineon Technologies Ag Schaltungsanordnung mit einem Feldeffekttransistor und Verfahren zum Betrieb der Schaltungsanordnung
US6656843B2 (en) * 2002-04-25 2003-12-02 International Rectifier Corporation Single mask trench fred with enlarged Schottky area
DE10223699B4 (de) * 2002-05-28 2007-11-22 Infineon Technologies Ag MOS-Transistoreinrichtung vom Trenchtyp
WO2004066395A2 (fr) * 2003-01-21 2004-08-05 North-West University Dispositif semi-conducteur a grille isolee a puissance de commutation rapide
TW588460B (en) * 2003-01-24 2004-05-21 Ind Tech Res Inst Trench power MOSFET and method of making the same
CN1802752A (zh) * 2003-11-25 2006-07-12 松下电器产业株式会社 半导体元件
DE102004045467B4 (de) * 2004-09-20 2020-07-30 Infineon Technologies Ag Feldeffekt-Trenchtransistor
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US8860174B2 (en) * 2006-05-11 2014-10-14 Micron Technology, Inc. Recessed antifuse structures and methods of making the same
KR100741919B1 (ko) * 2006-09-12 2007-07-24 동부일렉트로닉스 주식회사 Ｐｎ 접합 게이트 전극을 포함하는 트렌치형 모스트랜지스터 및 그 제조 방법
JP5128100B2 (ja) * 2006-09-29 2013-01-23 三菱電機株式会社 電力用半導体装置
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JP6084357B2 (ja) * 2011-11-02 2017-02-22 ルネサスエレクトロニクス株式会社 半導体装置
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Also Published As

Publication number Publication date
GB0028031D0 (en) 2001-01-03
US6566708B1 (en) 2003-05-20
DE60127166D1 (de) 2007-04-19
JP2004514293A (ja) 2004-05-13
WO2002041404A2 (fr) 2002-05-23
KR20020082482A (ko) 2002-10-31
DE60127166T2 (de) 2008-01-10
EP1340263A2 (fr) 2003-09-03
JP4087248B2 (ja) 2008-05-21
ATE356439T1 (de) 2007-03-15
KR100816253B1 (ko) 2008-03-21
EP1340263B1 (fr) 2007-03-07

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