WO2007086443A1 - 放熱材及びそれを用いた半導体装置 - Google Patents
放熱材及びそれを用いた半導体装置 Download PDFInfo
- Publication number
- WO2007086443A1 WO2007086443A1 PCT/JP2007/051132 JP2007051132W WO2007086443A1 WO 2007086443 A1 WO2007086443 A1 WO 2007086443A1 JP 2007051132 W JP2007051132 W JP 2007051132W WO 2007086443 A1 WO2007086443 A1 WO 2007086443A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- heat
- weight
- parts
- heat dissipating
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
- H10W40/251—Organics
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
- H10W40/77—Auxiliary members characterised by their shape
- H10W40/778—Auxiliary members characterised by their shape in encapsulations
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/877—Bump connectors and die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
Definitions
- the present invention relates to a heat dissipation material that hardly generates oil bleed, a heat dissipating material, and a semiconductor device in which it is interposed between a heat generating electronic component and a heat dissipating body.
- a heat sink such as a heat sink has been widely used in order to prevent damage due to temperature rise during use or deterioration of performance.
- a heat conductive material is used between the heat-generating electronic component and the heat sink.
- heat radiating sheets and heat radiating grease are known.
- heat-release grease can adhere to both the heat-generating electronic parts and the surface of the heat-dissipator and reduce the interfacial thermal resistance compared to heat-release sheets that are close to liquid in nature.
- the oil component tends to bleed out even when the grease is in force.
- Patent Document 1 proposes a silicone grease for heat dissipation in which a heat conductive filler is blended with a base foil using a specific polyorganosiloxane.
- Patent Document 2 contains a polyorganosiloxane having a bull group bonded to a silicon atom, a polyorganohydrogensiloxane having a hydrogen atom bonded to a silicon atom, a thermal conductive filler, and a platinum-based material.
- a heat dissipation material that has been gelled by a crosslinking reaction in the presence of a catalyst has been proposed.
- Patent Document 1 Japanese Patent Laid-Open No. 2003-301189
- Patent Document 2 JP 2002-294269 A
- An object of the present invention is to address such problems, and is excellent in thermal conductivity and hardly causes oil bleed. ⁇ Providing a heat dissipation material and a semiconductor device using the same It is in this.
- the inventors of the present invention have prepared a heat-dissipating material obtained by dispersing a thermally conductive filler in a matrix.
- a thermally conductive filler in a matrix.
- an addition reaction curable silicone gel with controlled flexibility, it is possible to obtain a heat-dissipating material that exhibits excellent thermal conductivity and hardly generates oil bleed and a semiconductor device using the same. And found the present invention
- the heat dissipating material according to one aspect of the present invention is a heat dissipating material interposed between the heat-generating electronic component and the heat dissipating body,
- a semiconductor device includes a heat-generating electronic component and a heat dissipation body, and the heat dissipation material according to the aspect is interposed between the heat-generating electronic component and the heat dissipation body. It is characterized by being allowed to.
- the silicone gel means a cured product having a low crosslinking density partially having a three-dimensional network structure.
- the rubber hardness value of JIS A hardness is 0, that is, it has a low rubber hardness that does not have an effective rubber hardness, so it is clearly distinguished from rubber-like elastic bodies.
- ASTM D 1403 (1Z4 cone) penetration is 100 or more.
- FIG. 1 is a cross-sectional view showing an example of a semiconductor device according to an embodiment of the present invention.
- the heat dissipating material of the embodiment of the present invention includes (A) an addition reaction curable silicone gel having a penetration (ASTM D1403, 1Z4 cone) of 100 or more, and (B) a heat conductive filler. To do.
- the addition reaction curable silicone gel of component (A) is a component that is used as a matrix of a heat radiating material, is less prone to oil bleed, and imparts the characteristics of the present invention that provides a heat radiating material.
- Component (A) is a polyorganosiloxane having an average of 0.1 to 2 alkenyl groups bonded to a silicon atom in the (Al) l molecule, and (A2) a hydrogen atom bonded to a silicon atom in one molecule.
- An addition reaction curable silicone gel composition containing two or more polyorganohydrogensiloxanes and (A3) a platinum-based catalyst is cured.
- R 1 is an alkaryl group.
- Preferred examples of the alkenyl group include those having 2 to 8 carbon atoms, such as vinyl group, aryl group, propenyl group, 1-butenyl group, and 1-hexenyl group. Preferably, it is a bur group.
- the alkenyl group is contained in an average of 0.1 to 2, preferably 0.5 to 1.8 on average in one molecule. If the average number of alkenyl groups is less than 0.1, gel preparation becomes difficult because too many polyorganosiloxane molecules do not participate in the crosslinking reaction.
- the (A) addition reaction curable silicone gel (gel-like cured product) becomes too hard and the desired penetration (AST MD 1403, penetration by 1/4 cone) Is more than 100).
- the alkyl group may be bonded to the carbon atom at the end of the molecular chain, bonded to the silicon atom in the middle of the molecular chain, or bonded to both.
- Type silicone gel composition From the viewpoint of the curing speed of (A) addition reaction curable silicone gel (gel-like cured product), especially flexibility, at least the molecular atoms at the end of the molecular chain, especially at the both ends of the molecular chain U, who prefers to join and.
- R 2 is a substituted or unsubstituted monovalent hydrocarbon group having no aliphatic unsaturated bond.
- R 2 has 1 to 12 carbon atoms, preferably 1 to 10 carbon atoms.
- Alkyl groups such as cyclopentyl, cyclohexyl, and cyclobutyl; aryl groups such as a phenyl, tolyl, xylyl, and naphthyl groups; benzyl, phenyl, and propyl groups A group in which some or all of these hydrogen atoms are substituted with a halogen atom such as chlorine, fluorine or bromine, a cyan group, such as a chloromethyl group, trifluoropropyl group, group, Buromofue - group, Jiburomofuwe - group, Tetorakurorofuwe - group, Furuorofuwe - group, Jifuruorofu Eniru halogenated such as a hydrocarbon group or alpha - Shiano Butyl group, / 3 Shianopuropiru group, etc. Shianoarukiru groups such as ⁇ Shianopuropiru group. Of these, a methyl group and a
- a, bi is a positive number satisfying 0 ⁇ a ⁇ 3, 0 ⁇ b ⁇ 3, l ⁇ a + b ⁇ 3.
- the molecular structure of the component (A1) may be a linear, branched, cyclic, or three-dimensional network (resin-like) mixture thereof.
- the viscosity of component (A1) at 23 ° C is preferably 0.1 to: LOPa's.
- LOPa's good physical properties of (A) addition reaction curable silicone gel (gel-like cured product) cannot be obtained, and it tends to be brittle.
- workability tends to deteriorate.
- the polyorganohydrogensiloxane of component (A2) is a cross-linking agent and has two or more hydrogen atoms (SiH groups) bonded to a silicon atom in one molecule.
- This hydrogen atom may be bonded to the chain atom at the end of the molecular chain, may be bonded to the middle part of the molecular chain, or may be bonded to both.
- Its molecular structure is linear, branched, cyclic or three-dimensional. Any one of dimensional networks may be used alone or in combination of two or more.
- R 3 is a substituted or unsubstituted monovalent hydrocarbon group that removes an aliphatic unsaturated hydrocarbon group.
- R 3 include alkyl groups such as a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a tert-butyl group, a hexyl group, a cyclohexyl group, and an octyl group; And aryl groups such as tolyl groups; aralkyl groups such as benzyl groups and phenyl groups; and some or all of hydrogen atoms of these groups are substituted with halogen atoms such as fluorine, chlorine and bromine and cyan groups.
- Examples thereof include chloromethyl group, bromoethyl group, trifluoropropyl group, cyanoethyl group and the like.
- an alkyl group having 1 to 4 carbon atoms is preferable, and a methyl group is more preferable from the viewpoint of ease of synthesis and cost.
- c and d are numbers satisfying 0.5 ⁇ c ⁇ 2, 0 ⁇ d ⁇ 2, 0.5 and c + d ⁇ 3, preferably 0
- the viscosity of component (A2) at 23 ° C is preferably 0.01 to 0.5 Pa's.
- the blending amount of component (A2) is such that the total number of hydrogen atoms bonded to the silicon atom is 0.3 to 1 for one alkenyl group bonded to the silicon atom of component (A1). 1.
- the amount is 5 pieces, preferably 0.4 to 1.2 pieces.
- the number is less than 3, the degree of crosslinking becomes insufficient, and (A) addition reaction-curable silicone gel (gel-like cured product) is difficult to obtain.
- a desired reaction penetration ASTM D 1403, penetration by 1Z4 cone is 100 or more
- (A) Caro reaction curable silicone gel (gel-like cured product) is obtained.
- the physical properties tend to change over time.
- the platinum-based catalyst of component (A3) is a component that accelerates the curing of the present composition.
- the component (A3) a known catalyst used in the hydrosilylation reaction can be used.
- a known catalyst used in the hydrosilylation reaction can be used.
- platinum black chloroplatinum chloride, chloroplatinic acid, a reaction product of chloroplatinic acid and a monohydric alcohol, a complex of chloroplatinic acid and olefins or vinyl siloxane, platinum bisacetate and the like.
- the blending amount of the component (A3) can be appropriately adjusted according to a desired curing rate as long as it is an amount necessary for curing.
- the total amount of addition reaction curable silicone gel composition is preferably in the range of 1 to: LOOppm in terms of platinum element.
- reaction inhibitors include acetylene alcohols such as 3, 5 dimethyl-1, monohex-3-ol, 2-methyl-3 hexyne-2-ol, 1-etul-1-cyclohexanol, and the like.
- Examples include 3-methyl 3-pentene 1-in, 3,5-dimethyl 3-hexene 1-in, and methyl-vinylsiloxane cyclic compounds, organic nitrogen compounds, and organic phosphorus compounds.
- the compounding amount of the reaction inhibitor may be in a range that does not impair the properties of the (A) addition reaction curable silicone gel (gel-like cured product) to be produced, but preferably (A1) is 0. 01 to 1 part by weight.
- the method for producing the addition reaction curable silicone gel of component (A) includes, for example, the above components (A1) to (A3) and other optional components such as a planetary mixer, a kneader, and a Shinagawa mixer. Examples thereof include a method in which an addition reaction curable silicone gel composition is obtained by mixing with a mixer and then heat-cured at 60 to 150 ° C. for 30 to 180 minutes.
- component (A) obtained in this way was used as a heat dissipation material by blending (A) component with (B) thermally conductive filler.
- a component In order to suppress the occurrence of oil bleed and obtain good shape followability to the heat-generating electronic components and the heat radiating body, it is 100 or more, preferably 120 or more, more preferably 120 to 220.
- Such a component (A) has such flexibility that it is substantially impossible to measure the viscosity with a rotational viscometer.
- the component (B) is not particularly limited as long as it has a good thermal conductivity.
- aluminum oxide, zinc oxide, silicon oxide, carbide carbide, nitride nitride, magnesium oxide, aluminum nitride can be used.
- inorganic powders such as aluminum, boron nitride and graphite, and metal powders such as aluminum, copper, silver, nickel, iron and stainless steel. Use alone or in combination of two or more
- the average particle diameter is 0.1 to: L00 ⁇ m, preferably 0.1 to 80 ⁇ m. If the average particle size is less than 0.1 ⁇ m, it is difficult to obtain the desired consistency (200-450 at 23 ° C) for the heat dissipation material! Yes. On the other hand, if the average particle size exceeds 100 m, the stability of the heat dissipation material tends to deteriorate.
- the average particle diameter can be determined using, for example, a laser beam diffraction method. The shape can be spherical, indeterminate!
- the amount of component (B) is 500 to 2000 parts by weight, preferably 600 to 1500 parts by weight, per 100 parts by weight of component (A).
- the blending amount is less than 500 parts by weight, a desired thermal conductivity of 1.0 W Z (m′K) or more cannot be obtained after curing. On the other hand, if it exceeds 2000 parts by weight, workability will be reduced.
- the above-mentioned components (A) to (B) are used as basic components, and as necessary, other flame retardants, flame retardants, heat resistance improvers, plasticizers, colorants, and adhesion-imparting materials. You can add them in a range that does not detract from the purpose of the present invention.
- Examples of the method of manufacturing the heat radiation material according to the embodiment of the present invention include a method of mixing the components (A) to (B) and other optional components using a mixer such as a planetary mixer, an adader, or a Shinagawa mixer. Can be mentioned.
- a mixer such as a planetary mixer, an adader, or a Shinagawa mixer.
- the properties of the resulting heat dissipation material are grease-like and extensible. By applying and applying this, it is possible to reduce the interfacial thermal resistance by being in close contact with both the heat generating electronic component and the unevenness of the surface of the radiator.
- the consistency of the heat dissipating material of the embodiment of the present invention is preferably 200 to 450.
- the consistency is a value in accordance with IS K 2220. If the consistency level at 23 ° C exceeds 50, dripping tends to occur during coating. On the other hand, when it is less than 200, for example, when it is applied onto a heat-generating electronic component using a syringe or dispenser or the like, it becomes difficult to discharge and it becomes difficult to obtain a desired thickness.
- the heat dissipation material of the embodiment of the present invention has a thermal conductivity measured at 23 ° C of 1. OWZ (m.K) or higher, preferably 1.5 WZ (m.K) or higher, as measured by a hot wire method. If the thermal conductivity is less than 1.0 WZ (m'K), the thermal conductivity may be insufficient and the application is likely to be limited.
- the heat dissipating material of the embodiment of the present invention exhibits excellent low bleedness as well as heat conductivity
- the heat dissipating material is used as a heat conductive material interposed between the heat generating electronic component and the heat dissipating body. Is preferred.
- FIG. 1 is a cross-sectional view showing an example of a semiconductor device according to an embodiment of the present invention.
- the semiconductor device 1 includes a heat-generating electronic component such as a CPU 3 and a heat radiator such as a heat sink 4 mounted on a wiring board 2.
- the CPU 3 is provided with a heat spreader 5, and a well-known heat conductive material such as a heat radiating gel 6 is used inside the package, that is, between the heat spreader 15 and the CPU 3.
- the grease-like heat dissipating material 7 of the embodiment of the present invention described above is interposed outside the knock cage, that is, between the heat spreader 5 and the heat sink 4.
- heat radiation gel 6 is applied to CPU 3 mounted on wiring board 2 with a syringe or the like, and the package is assembled and heated. Then, after applying the grease-like heat dissipation material 7 to the heat spreader 5 with a syringe or the like, the heat sink 4 and the wiring board 2 are pressed together with a clamp 8 or a screw.
- the heat dissipating material 7 is used outside the package (between the heat spreader 1 and the heat sink 4), but is not limited to this. It may be used. When used inside a knocker, its low bleed property prevents contamination of the CPU3, etc., and improves reliability.
- the thickness of the heat dissipating material 7 interposed between the CPU 3 and the heat sink 4 is preferably 5 to 300 ⁇ m. If the thickness of the heat dissipating material 7 is less than 5 m, a slight gap in pressing may cause a gap between the heat spreader 5 and the heat sink 4, for example. On the other hand, if it is thicker than 300 / zm, the thermal resistance increases and the heat dissipation effect tends to deteriorate.
- the present invention will be specifically described with reference to examples. However, the present invention is not limited to the examples.
- the viscosity is a value measured at 23 ° C.
- the average particle diameter is a value measured by a laser light diffraction method.
- the heat radiation materials obtained in the examples and comparative examples were evaluated as follows, and the results are shown in Table 1. The characteristics shown in Table 1 are measured at 23 ° C.
- thermo conductivity meter QTM-500, manufactured by Kyoto Electronics Industry Co., Ltd.
- the obtained heat-dissipating material was weighed in 0.1 g on a commercially available filter paper and left in an oven at 105 ° C.
- the length of the oil bleed observed around the heat dissipation material after 1 day, 10 days, 20 days, and 30 days was measured.
- (A1) 100 parts by weight of polydimethylsiloxane having an average of one vinyl group located only at the end of the molecular chain with a viscosity of 0.7 Pa's, (A2) trimethylsilyl with a viscosity of 0.015 Pa's Base-blocked dimethylsiloxane Z methylhydrogensiloxane copolymer 0.4 parts by weight (SiH group content 8.8 mmol / g, (A2) SiHZ (Al) SiVi 0.7), (A3) Silver chloride Acid vinyl siloxane complex compound (platinum amount 1.8%) 0.02 part by weight (platinum amount 4 ppm), 3,5-dimethyl-1-hexyn-3-ol 0.02 part by weight, Triallyl isocyanurate 0.2 parts by weight was added to a universal mixer and mixed uniformly.
- the mixture was mixed at 150 ° C. for 1 hour to obtain (A-1) addition reaction curable silicone gel.
- the obtained (A-1) addition reaction-cured silicone gel had a penetration of 200 measured using a 1Z4 cone according to ASTM D1403. Note that it was impossible to measure the viscosity with a rotational viscometer (manufactured by Shibaura System Co., Ltd.).
- (A1) 100 parts by weight of polydimethylsiloxane having an average of one vinyl group located only at the end of the molecular chain with a viscosity of 0.7 Pa's, (A2) trimethylsilyl with a viscosity of 0.015 Pa's Block-blocked dimethylsiloxane Z methylhydrogensiloxane copolymer 0.6 parts by weight (SiH group content 8.8 mmolZg, (A2) SiHZ (Al) SiV l.
- (A1) 100 parts by weight of polydimethylsiloxane having an average of one vinyl group located only at the end of the molecular chain with a viscosity of 0.7 Pa's, (A2) trimethylsilyl with a viscosity of 0.015 Pa's Block-blocked dimethylsiloxane Z methylhydrogensiloxane copolymer 0.7 parts by weight (SiH group content 8.8 mmolZg, (A2) SiHZ (Al) SiV l.
- (A1) 100 parts by weight of polydimethylsiloxane having an average of one vinyl group located only at the end of the molecular chain with a viscosity of 0.7 Pa's, (A2) trimethylsilyl with a viscosity of 0.015 Pa's Block-capped dimethylsiloxane Z methylhydrogensiloxane copolymer 0.9 parts by weight (SiH group content 8.8 mmolZg, (A2) SiHZ (Al) SiV l.
- Parts (B-1) 320 parts by weight of aluminum oxide powder with an average particle size of 14 m, (B-2) 320 parts by weight of aluminum oxide powder with an average particle size of 3 ⁇ m, (B-3) average particle size 0.5 ⁇ m acid 160 parts by weight of zinc powder was added to a 1 L universal kneader and mixed uniformly to obtain a heat dissipation material. The characteristics of this heat dissipation material were measured and the results are shown in Table 1.
- each example using an addition reaction curable silicone gel having a penetration of 100 or more as component (A) can obtain a heat dissipation material with very little oil bleed. it can.
- the heat conductive filler can be highly filled, excellent heat conductivity can be exhibited.
- the heat dissipating material of the present invention is excellent in thermal conductivity and hardly generates oil bleed. Therefore, the heat dissipating material is suitable as a heat conductive material interposed between the heat generating electronic component and the heat dissipating body.
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Description
Claims
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007800033893A CN101375395B (zh) | 2006-01-26 | 2007-01-25 | 散热材料以及使用该材料的半导体装置 |
| EP07707379.9A EP1983568B1 (en) | 2006-01-26 | 2007-01-25 | Heat dissipating member and semiconductor device using same |
| JP2007555986A JP4993611B2 (ja) | 2006-01-26 | 2007-01-25 | 放熱材及びそれを用いた半導体装置 |
| KR1020087017603A KR101357514B1 (ko) | 2006-01-26 | 2007-01-25 | 방열재와 이를 이용한 반도체 장치 |
| US12/161,659 US8187490B2 (en) | 2006-01-26 | 2007-01-25 | Heat dissipating material and semiconductor device using same |
| US13/240,695 US8221645B2 (en) | 2006-01-26 | 2011-09-22 | Heat dissipating material and semiconductor device using same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006-018017 | 2006-01-26 | ||
| JP2006018017 | 2006-01-26 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/161,659 A-371-Of-International US8187490B2 (en) | 2006-01-26 | 2007-01-25 | Heat dissipating material and semiconductor device using same |
| US13/240,695 Continuation US8221645B2 (en) | 2006-01-26 | 2011-09-22 | Heat dissipating material and semiconductor device using same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2007086443A1 true WO2007086443A1 (ja) | 2007-08-02 |
Family
ID=38309231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2007/051132 Ceased WO2007086443A1 (ja) | 2006-01-26 | 2007-01-25 | 放熱材及びそれを用いた半導体装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8187490B2 (ja) |
| EP (1) | EP1983568B1 (ja) |
| JP (1) | JP4993611B2 (ja) |
| KR (1) | KR101357514B1 (ja) |
| CN (1) | CN101375395B (ja) |
| TW (1) | TWI462968B (ja) |
| WO (1) | WO2007086443A1 (ja) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010153803A (ja) * | 2008-11-28 | 2010-07-08 | Toshiba Lighting & Technology Corp | 電子部品実装モジュール及び電気機器 |
| US20110311767A1 (en) * | 2009-03-12 | 2011-12-22 | Elahee G M Fazley | Thermal Interface Materials and Methods for Their Preparation and Use |
| WO2013129600A1 (ja) * | 2012-03-02 | 2013-09-06 | 富士高分子工業株式会社 | パテ状伝熱材及びその製造方法 |
| US20220380548A1 (en) * | 2019-10-24 | 2022-12-01 | Shin-Etsu Chemical Co., Ltd. | Thermally conductive silicone composition and production method therefor |
| JP2024500073A (ja) * | 2020-12-14 | 2024-01-04 | ダウ シリコーンズ コーポレーション | ポリ(ジオルガノ/オルガノハイドロジェン)シロキサンコポリマーを調製するための方法 |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011054806A (ja) * | 2009-09-02 | 2011-03-17 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| CN101864279A (zh) * | 2010-05-17 | 2010-10-20 | 盐城市赛瑞特半导体照明有限公司 | 用于led与散热装置间的饱和式超细填充剂 |
| US8917510B2 (en) * | 2011-01-14 | 2014-12-23 | International Business Machines Corporation | Reversibly adhesive thermal interface material |
| US8511369B2 (en) | 2011-04-18 | 2013-08-20 | International Business Machines Corporation | Thermally reversible crosslinked polymer modified particles and methods for making the same |
| CN102980584B (zh) | 2011-09-02 | 2017-12-19 | 深圳市大疆创新科技有限公司 | 一种无人飞行器惯性测量模块 |
| KR20130026062A (ko) * | 2011-09-05 | 2013-03-13 | 삼성전자주식회사 | 인쇄회로기판 조립체 및 그 제조방법 |
| US9085719B2 (en) | 2013-03-18 | 2015-07-21 | International Business Machines Corporation | Thermally reversible thermal interface materials with improved moisture resistance |
| US20140284040A1 (en) * | 2013-03-22 | 2014-09-25 | International Business Machines Corporation | Heat spreading layer with high thermal conductivity |
| US10510707B2 (en) | 2013-11-11 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thermally conductive molding compound structure for heat dissipation in semiconductor packages |
| US9960099B2 (en) * | 2013-11-11 | 2018-05-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thermally conductive molding compound structure for heat dissipation in semiconductor packages |
| US11229147B2 (en) | 2015-02-06 | 2022-01-18 | Laird Technologies, Inc. | Thermally-conductive electromagnetic interference (EMI) absorbers with silicon carbide |
| CN108139216B (zh) * | 2015-04-07 | 2021-11-05 | 深圳市大疆创新科技有限公司 | 用于提供简单而可靠的惯性测量单元的系统和方法 |
| JP6223590B2 (ja) * | 2015-05-22 | 2017-11-01 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 熱伝導性組成物 |
| EP3150672B1 (en) * | 2015-10-02 | 2018-05-09 | Shin-Etsu Chemical Co., Ltd. | Thermal conductive silicone composition and semiconductor device |
| WO2017217510A1 (ja) * | 2016-06-15 | 2017-12-21 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 硬化性ポリオルガノシロキサン組成物及びその使用 |
| TWI767007B (zh) * | 2017-05-31 | 2022-06-11 | 日商邁圖高新材料日本合同公司 | 熱傳導性聚有機矽氧烷組成物 |
| JP6866877B2 (ja) * | 2018-05-31 | 2021-04-28 | 信越化学工業株式会社 | 低熱抵抗シリコーン組成物 |
| KR20220124617A (ko) | 2020-01-06 | 2022-09-14 | 후지고분시고오교오가부시끼가이샤 | 열전도성 실리콘겔 조성물 |
| DE102020112809A1 (de) * | 2020-05-12 | 2021-11-18 | Lisa Dräxlmaier GmbH | Kühlanordnung |
| EP4301805A1 (en) | 2021-03-04 | 2024-01-10 | Momentive Performance Materials Inc. | Thermal gel composition |
| JP7837521B2 (ja) * | 2022-11-28 | 2026-03-31 | 国立大学法人 鹿児島大学 | 温度制御装置の設計方法及び温度制御装置 |
| CN119529533A (zh) * | 2023-08-30 | 2025-02-28 | 迈图高新材料公司 | 有机硅组合物、其制备方法及其用途 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05105814A (ja) * | 1991-01-24 | 1993-04-27 | Shin Etsu Chem Co Ltd | 硬化性シリコーン組成物およびその硬化物 |
| JPH10189838A (ja) * | 1996-12-25 | 1998-07-21 | Siegel:Kk | 熱伝導ゲル |
| JPH11140322A (ja) * | 1997-11-13 | 1999-05-25 | Toshiba Silicone Co Ltd | 難燃性シリコーンゲル組成物 |
| JP2004363272A (ja) * | 2003-06-04 | 2004-12-24 | Denki Kagaku Kogyo Kk | 放熱部材 |
| JP3676544B2 (ja) * | 1997-08-05 | 2005-07-27 | ジーイー東芝シリコーン株式会社 | 難燃性放熱性シート用シリコーンゲル組成物および難燃性放熱性シリコーンシート |
| JP2005206761A (ja) * | 2004-01-26 | 2005-08-04 | Ge Toshiba Silicones Co Ltd | 耐熱性シリコーン組成物 |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3844992A (en) * | 1973-11-16 | 1974-10-29 | Dow Corning | Wood graining tool fast cure organopolysiloxane resins |
| US4842911A (en) * | 1983-09-02 | 1989-06-27 | The Bergquist Company | Interfacing for heat sinks |
| JPS63251466A (ja) * | 1987-04-06 | 1988-10-18 | Shin Etsu Chem Co Ltd | 熱伝導性液状シリコ−ンゴム組成物 |
| US4852646A (en) * | 1987-06-16 | 1989-08-01 | Raychem Corporation | Thermally conductive gel materials |
| US4801642A (en) * | 1987-12-28 | 1989-01-31 | Dow Corning Corporation | Thermally stable organosiloxane compositions and method for preparing same |
| JPH0297559A (ja) * | 1988-10-03 | 1990-04-10 | Toshiba Silicone Co Ltd | 熱伝導性シリコーン組成物 |
| JPH0619027B2 (ja) * | 1989-02-13 | 1994-03-16 | 信越化学工業株式会社 | 熱伝導性シリコーンオイルコンパウンド |
| CA2043464C (en) | 1990-08-02 | 2001-01-30 | James J. Silva | Reagent containment and delivery tray |
| US5186849A (en) * | 1990-11-30 | 1993-02-16 | Toshiba Silicone Ltd. | Silicone grease composition |
| TW218887B (ja) | 1991-01-24 | 1994-01-11 | Shinetsu Chem Ind Co | |
| JP3541390B2 (ja) * | 1991-02-22 | 2004-07-07 | 東レ・ダウコーニング・シリコーン株式会社 | グリース状シリコーン組成物およびその製造方法 |
| JP2623380B2 (ja) * | 1991-06-03 | 1997-06-25 | 信越化学工業株式会社 | 熱伝導性に優れたシリコーン組成物 |
| JPH07268219A (ja) * | 1994-03-31 | 1995-10-17 | Toray Dow Corning Silicone Co Ltd | 光学充填用シリコーンゲル組成物 |
| JPH08225743A (ja) * | 1995-02-20 | 1996-09-03 | Toray Dow Corning Silicone Co Ltd | シリコーンゲル組成物 |
| IT1288292B1 (it) * | 1996-07-30 | 1998-09-11 | Zhermack Spa | Composto siliconico reticolabile stabile allo stoccaggio. |
| US5929138A (en) * | 1996-11-05 | 1999-07-27 | Raychem Corporation | Highly thermally conductive yet highly comformable alumina filled composition and method of making the same |
| JPH10287811A (ja) * | 1997-02-12 | 1998-10-27 | Toray Dow Corning Silicone Co Ltd | 硬化性シリコーン組成物 |
| JP3576741B2 (ja) * | 1997-03-06 | 2004-10-13 | 東レ・ダウコーニング・シリコーン株式会社 | シリコーン硬化物の難燃性を向上させる方法 |
| US6114429A (en) * | 1997-08-06 | 2000-09-05 | Shin-Etsu Chemical Co., Ltd. | Thermally conductive silicone composition |
| JP3558527B2 (ja) * | 1998-07-06 | 2004-08-25 | 信越化学工業株式会社 | シリコーンゲルシート、組成物およびその製法 |
| JP3948642B2 (ja) * | 1998-08-21 | 2007-07-25 | 信越化学工業株式会社 | 熱伝導性グリース組成物及びそれを使用した半導体装置 |
| JP2000109373A (ja) * | 1998-10-02 | 2000-04-18 | Shin Etsu Chem Co Ltd | 放熱用シリコーングリース組成物及びそれを使用した半導体装置 |
| JP2000169873A (ja) * | 1998-12-02 | 2000-06-20 | Shin Etsu Chem Co Ltd | シリコーングリース組成物 |
| JP3543663B2 (ja) * | 1999-03-11 | 2004-07-14 | 信越化学工業株式会社 | 熱伝導性シリコーンゴム組成物及びその製造方法 |
| US6531771B1 (en) * | 1999-04-20 | 2003-03-11 | Tyco Electronics Corporation | Dissipation of heat from a circuit board having bare silicon chips mounted thereon |
| JP4727017B2 (ja) * | 1999-11-15 | 2011-07-20 | 東レ・ダウコーニング株式会社 | 熱伝導性シリコーンゴム組成物 |
| DE60220392T2 (de) * | 2001-03-09 | 2008-01-24 | Dow Corning Toray Co., Ltd. | Schmierige silikonzusammensetzung |
| JP4796704B2 (ja) | 2001-03-30 | 2011-10-19 | 株式会社タイカ | 押出可能な架橋済グリース状放熱材を充填・封入した容器の製法 |
| JP4054986B2 (ja) * | 2001-04-23 | 2008-03-05 | 信越化学工業株式会社 | 放熱部材 |
| JP3807995B2 (ja) * | 2002-03-05 | 2006-08-09 | ポリマテック株式会社 | 熱伝導性シート |
| JP4130091B2 (ja) | 2002-04-10 | 2008-08-06 | 信越化学工業株式会社 | 放熱用シリコーングリース組成物 |
| JP2004176016A (ja) * | 2002-11-29 | 2004-06-24 | Shin Etsu Chem Co Ltd | 熱伝導性シリコーン組成物及びその成形体 |
| JP4646496B2 (ja) * | 2003-02-13 | 2011-03-09 | 東レ・ダウコーニング株式会社 | 熱伝導性シリコーン組成物 |
| JP3925805B2 (ja) * | 2003-08-25 | 2007-06-06 | 信越化学工業株式会社 | 放熱部材 |
| JP2006328164A (ja) * | 2005-05-25 | 2006-12-07 | Shin Etsu Chem Co Ltd | 熱伝導性シリコーン組成物 |
-
2007
- 2007-01-25 JP JP2007555986A patent/JP4993611B2/ja active Active
- 2007-01-25 KR KR1020087017603A patent/KR101357514B1/ko active Active
- 2007-01-25 CN CN2007800033893A patent/CN101375395B/zh active Active
- 2007-01-25 WO PCT/JP2007/051132 patent/WO2007086443A1/ja not_active Ceased
- 2007-01-25 US US12/161,659 patent/US8187490B2/en active Active
- 2007-01-25 EP EP07707379.9A patent/EP1983568B1/en active Active
- 2007-01-26 TW TW096103010A patent/TWI462968B/zh active
-
2011
- 2011-09-22 US US13/240,695 patent/US8221645B2/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05105814A (ja) * | 1991-01-24 | 1993-04-27 | Shin Etsu Chem Co Ltd | 硬化性シリコーン組成物およびその硬化物 |
| JPH10189838A (ja) * | 1996-12-25 | 1998-07-21 | Siegel:Kk | 熱伝導ゲル |
| JP3676544B2 (ja) * | 1997-08-05 | 2005-07-27 | ジーイー東芝シリコーン株式会社 | 難燃性放熱性シート用シリコーンゲル組成物および難燃性放熱性シリコーンシート |
| JPH11140322A (ja) * | 1997-11-13 | 1999-05-25 | Toshiba Silicone Co Ltd | 難燃性シリコーンゲル組成物 |
| JP2004363272A (ja) * | 2003-06-04 | 2004-12-24 | Denki Kagaku Kogyo Kk | 放熱部材 |
| JP2005206761A (ja) * | 2004-01-26 | 2005-08-04 | Ge Toshiba Silicones Co Ltd | 耐熱性シリコーン組成物 |
Non-Patent Citations (1)
| Title |
|---|
| See also references of EP1983568A4 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010153803A (ja) * | 2008-11-28 | 2010-07-08 | Toshiba Lighting & Technology Corp | 電子部品実装モジュール及び電気機器 |
| US20110311767A1 (en) * | 2009-03-12 | 2011-12-22 | Elahee G M Fazley | Thermal Interface Materials and Methods for Their Preparation and Use |
| US8440312B2 (en) * | 2009-03-12 | 2013-05-14 | Dow Corning Corporation | Thermal interface materials and methods for their preparation and use |
| WO2013129600A1 (ja) * | 2012-03-02 | 2013-09-06 | 富士高分子工業株式会社 | パテ状伝熱材及びその製造方法 |
| JP5614909B2 (ja) * | 2012-03-02 | 2014-10-29 | 富士高分子工業株式会社 | パテ状伝熱材及びその製造方法 |
| US20220380548A1 (en) * | 2019-10-24 | 2022-12-01 | Shin-Etsu Chemical Co., Ltd. | Thermally conductive silicone composition and production method therefor |
| US12221543B2 (en) * | 2019-10-24 | 2025-02-11 | Shin-Etsu Chemical Co., Ltd. | Thermally conductive silicone composition and production method therefor |
| JP2024500073A (ja) * | 2020-12-14 | 2024-01-04 | ダウ シリコーンズ コーポレーション | ポリ(ジオルガノ/オルガノハイドロジェン)シロキサンコポリマーを調製するための方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080093997A (ko) | 2008-10-22 |
| KR101357514B1 (ko) | 2014-02-03 |
| JPWO2007086443A1 (ja) | 2009-06-18 |
| TW200738826A (en) | 2007-10-16 |
| US8221645B2 (en) | 2012-07-17 |
| EP1983568B1 (en) | 2014-07-16 |
| CN101375395B (zh) | 2012-10-03 |
| US20120007017A1 (en) | 2012-01-12 |
| JP4993611B2 (ja) | 2012-08-08 |
| CN101375395A (zh) | 2009-02-25 |
| US8187490B2 (en) | 2012-05-29 |
| TWI462968B (zh) | 2014-12-01 |
| EP1983568A4 (en) | 2012-03-21 |
| US20100220446A1 (en) | 2010-09-02 |
| EP1983568A1 (en) | 2008-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2007086443A1 (ja) | 放熱材及びそれを用いた半導体装置 | |
| JP4987496B2 (ja) | 放熱材の製造方法 | |
| JP5233325B2 (ja) | 熱伝導性硬化物及びその製造方法 | |
| JP5565758B2 (ja) | 硬化性でグリース状の熱伝導性シリコーン組成物および半導体装置 | |
| JP6214094B2 (ja) | 熱伝導性シート | |
| JP2008038137A (ja) | 熱伝導性シリコーングリース組成物およびその硬化物 | |
| TW201938688A (zh) | 聚矽氧組成物 | |
| TW201943768A (zh) | 熱傳導性矽酮組成物及其硬化物 | |
| TW201905054A (zh) | 熱傳導性聚有機矽氧烷組成物 | |
| CN105246977A (zh) | 热传导性硅酮组合物 | |
| JP2009203373A (ja) | 熱伝導性シリコーン組成物 | |
| TWI796457B (zh) | 矽酮組成物 | |
| CN113396055A (zh) | 具有热传导性粘着层的热传导性硅酮橡胶片 | |
| JP7467017B2 (ja) | 熱伝導性シリコーン組成物及びその硬化物 | |
| WO2015040777A1 (ja) | シリコーン組成物及び熱伝導性シリコーン組成物の製造方法 | |
| WO2022230600A1 (ja) | 硬化性オルガノポリシロキサン組成物及び半導体装置 | |
| JP2009235279A (ja) | 熱伝導性成形体およびその製造方法 | |
| JPWO2018020862A1 (ja) | 熱伝導性シート | |
| WO2020129555A1 (ja) | 熱伝導性シリコーン組成物及び半導体装置 | |
| TWI834860B (zh) | 熱傳導性矽氧組成物、半導體裝置及其製造方法 | |
| JP7271411B2 (ja) | 熱伝導性シリコーン組成物、半導体装置及びその製造方法 | |
| JP2004331835A (ja) | 放熱シート | |
| WO2024048335A1 (ja) | 熱伝導性シリコーン組成物 | |
| WO2023149175A1 (ja) | 熱伝導性シリコーン組成物及びその製造方法 | |
| JP7650612B2 (ja) | 熱伝導性シリコーン組成物、半導体装置及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| DPE1 | Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101) | ||
| ENP | Entry into the national phase |
Ref document number: 2007555986 Country of ref document: JP Kind code of ref document: A |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 1020087017603 Country of ref document: KR |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 12161659 Country of ref document: US |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 200780003389.3 Country of ref document: CN |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 2007707379 Country of ref document: EP |
|
| DPE1 | Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101) |
