ATE184711T1 - Röntgenstrahlmaskenstruktur und - belichtungsverfahren sowie damit hergestelltes halbleiterbauelement und herstellungsverfahren für die röntgenstrahlmaskenstruktur - Google Patents

Röntgenstrahlmaskenstruktur und - belichtungsverfahren sowie damit hergestelltes halbleiterbauelement und herstellungsverfahren für die röntgenstrahlmaskenstruktur

Info

Publication number
ATE184711T1
ATE184711T1 AT92119367T AT92119367T ATE184711T1 AT E184711 T1 ATE184711 T1 AT E184711T1 AT 92119367 T AT92119367 T AT 92119367T AT 92119367 T AT92119367 T AT 92119367T AT E184711 T1 ATE184711 T1 AT E184711T1
Authority
AT
Austria
Prior art keywords
mask structure
ray mask
ray
semiconductor component
produced therefrom
Prior art date
Application number
AT92119367T
Other languages
English (en)
Inventor
Keiko Chiba
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP32671791A external-priority patent/JP2880341B2/ja
Priority claimed from JP32671691A external-priority patent/JP2952097B2/ja
Priority claimed from JP19467292A external-priority patent/JP3280074B2/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE184711T1 publication Critical patent/ATE184711T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT92119367T 1991-11-15 1992-11-12 Röntgenstrahlmaskenstruktur und - belichtungsverfahren sowie damit hergestelltes halbleiterbauelement und herstellungsverfahren für die röntgenstrahlmaskenstruktur ATE184711T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP32671791A JP2880341B2 (ja) 1991-11-15 1991-11-15 Ｘ線マスクの製造方法
JP32671691A JP2952097B2 (ja) 1991-11-15 1991-11-15 Ｘ線マスク構造体
JP19467292A JP3280074B2 (ja) 1992-06-30 1992-06-30 Ｘ線マスク製造方法

Publications (1)

Publication Number Publication Date
ATE184711T1 true ATE184711T1 (de) 1999-10-15

Family

ID=27326977

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92119367T ATE184711T1 (de) 1991-11-15 1992-11-12 Röntgenstrahlmaskenstruktur und - belichtungsverfahren sowie damit hergestelltes halbleiterbauelement und herstellungsverfahren für die röntgenstrahlmaskenstruktur

Country Status (6)

Country Link
US (1) US5422921A (de)
EP (1) EP0542265B1 (de)
AT (1) ATE184711T1 (de)
CA (1) CA2082909C (de)
DE (1) DE69229987T2 (de)
SG (1) SG43954A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08262699A (ja) * 1995-03-28 1996-10-11 Canon Inc レジスト組成物、レジスト処理方法及び装置
JP3267471B2 (ja) * 1995-08-02 2002-03-18 キヤノン株式会社 マスク、これを用いた露光装置やデバイス生産方法
JPH0992602A (ja) * 1995-09-26 1997-04-04 Canon Inc マスク構造体及びその製造方法
JPH09306807A (ja) * 1996-05-14 1997-11-28 Canon Inc Ｘ線露光用マスク構造体の製造方法
US6317479B1 (en) 1996-05-17 2001-11-13 Canon Kabushiki Kaisha X-ray mask, and exposure method and apparatus using the same
US6101237A (en) * 1996-08-28 2000-08-08 Canon Kabushiki Kaisha X-ray mask and X-ray exposure method using the same
JP4011687B2 (ja) 1997-10-01 2007-11-21 キヤノン株式会社 マスク構造体、該マスク構造体を用いた露光装置、該マスク構造体を用いた半導体デバイス製造方法
JP2000012428A (ja) 1998-06-19 2000-01-14 Canon Inc Ｘ線マスク構造体、該ｘ線マスク構造体を用いたｘ線露光方法、前記ｘ線マスク構造体を用いたｘ線露光装置、前記ｘ線マスク構造体を用いた半導体デバイスの製造方法、および該製造方法によって製造された半導体デバイス
KR100308854B1 (ko) * 1998-12-21 2002-10-31 엘지.필립스 엘시디 주식회사 액정표시장치의제조방법
JP2000286187A (ja) 1999-03-31 2000-10-13 Canon Inc 露光装置、該露光装置に用いるマスク構造体、露光方法、前記露光装置を用いて作製された半導体デバイス、および半導体デバイス製造方法
JP3619118B2 (ja) 2000-05-01 2005-02-09 キヤノン株式会社 露光用反射型マスクとその製造方法、並びに露光装置とデバイス製造方法
JP3510235B2 (ja) * 2002-04-18 2004-03-22 沖電気工業株式会社 半導体装置の製造方法
JP4220229B2 (ja) * 2002-12-16 2009-02-04 大日本印刷株式会社 荷電粒子線露光用マスクブランクスおよび荷電粒子線露光用マスクの製造方法
US7608367B1 (en) * 2005-04-22 2009-10-27 Sandia Corporation Vitreous carbon mask substrate for X-ray lithography

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3742230A (en) * 1972-06-29 1973-06-26 Massachusetts Inst Technology Soft x-ray mask support substrate
JPS5350680A (en) * 1976-10-19 1978-05-09 Nec Corp Transfer mask for x-ray exposure and its production
US4178403A (en) * 1977-08-04 1979-12-11 Konishiroku Photo Industry Co., Ltd. Mask blank and mask
EP0049799B1 (de) * 1980-10-09 1986-02-12 Dai Nippon Insatsu Kabushiki Kaisha Blankophotoschablone und Photoschablone
DE3119682A1 (de) * 1981-05-18 1982-12-02 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels strahlungslithographie"
JPS57211732A (en) * 1981-06-24 1982-12-25 Toshiba Corp X ray exposing mask and manufacture thereof
US4411972A (en) * 1981-12-30 1983-10-25 International Business Machines Corporation Integrated circuit photomask
DE3425063A1 (de) * 1984-07-07 1986-02-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Maske fuer die roentgenlithographie
US4735877A (en) * 1985-10-07 1988-04-05 Canon Kabushiki Kaisha Lithographic mask structure and lithographic process
JPS62202518A (ja) * 1986-02-03 1987-09-07 Fujitsu Ltd Ｘ線露光用マスク
JPH0682604B2 (ja) * 1987-08-04 1994-10-19 三菱電機株式会社 Ｘ線マスク
JPH02170410A (ja) * 1988-12-23 1990-07-02 Hitachi Ltd 放射線露光用マスクおよびこれを用いた放射線露光方法
JPH0775219B2 (ja) * 1989-01-18 1995-08-09 富士通株式会社 Ｘ線露光マスクの製造方法
US5196283A (en) * 1989-03-09 1993-03-23 Canon Kabushiki Kaisha X-ray mask structure, and x-ray exposure process
US5057388A (en) * 1989-05-26 1991-10-15 Technion Research And Development Foundation Ltd. Method for the preparation of mask for X-ray lithography
JP2801270B2 (ja) * 1989-07-13 1998-09-21 キヤノン株式会社 マスク作成方法
US5335256A (en) * 1991-03-18 1994-08-02 Canon Kabushiki Kaisha Semiconductor substrate including a single or multi-layer film having different densities in the thickness direction
JP3105990B2 (ja) * 1991-06-26 2000-11-06 株式会社東芝 Ｘ線マスクおよびｘ線マスクの製造方法
JPH0567561A (ja) * 1991-09-10 1993-03-19 Canon Inc Ｘ線マスク基板とその製造方法およびｘ線マスク
JP3073067B2 (ja) * 1991-10-04 2000-08-07 キヤノン株式会社 Ｘ線露光用マスク及びその製造方法
US5334466A (en) * 1991-10-24 1994-08-02 Matsushita Electric Industrial Co., Ltd. X-ray mask and process comprising convex-concave alignment mark with alignment reflection film

Also Published As

Publication number Publication date
DE69229987D1 (de) 1999-10-21
EP0542265B1 (de) 1999-09-15
CA2082909C (en) 2000-01-04
EP0542265A1 (de) 1993-05-19
CA2082909A1 (en) 1993-05-16
SG43954A1 (en) 1997-11-14
US5422921A (en) 1995-06-06
DE69229987T2 (de) 2000-04-20

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