ATE268217T1 - Vorrichtung zum aufbringen von dünnen schichten - Google Patents

Vorrichtung zum aufbringen von dünnen schichten

Info

Publication number
ATE268217T1
ATE268217T1 AT00311218T AT00311218T ATE268217T1 AT E268217 T1 ATE268217 T1 AT E268217T1 AT 00311218 T AT00311218 T AT 00311218T AT 00311218 T AT00311218 T AT 00311218T AT E268217 T1 ATE268217 T1 AT E268217T1
Authority
AT
Austria
Prior art keywords
gas
reactor
thin layers
ozone
applying thin
Prior art date
Application number
AT00311218T
Other languages
English (en)
Inventor
Choi Won-Sung
Original Assignee
Ips Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ips Ltd filed Critical Ips Ltd
Application granted granted Critical
Publication of ATE268217T1 publication Critical patent/ATE268217T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Magnetic Heads (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT00311218T 1999-12-17 2000-12-15 Vorrichtung zum aufbringen von dünnen schichten ATE268217T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990058541A KR100330749B1 (ko) 1999-12-17 1999-12-17 반도체 박막증착장치

Publications (1)

Publication Number Publication Date
ATE268217T1 true ATE268217T1 (de) 2004-06-15

Family

ID=19626555

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00311218T ATE268217T1 (de) 1999-12-17 2000-12-15 Vorrichtung zum aufbringen von dünnen schichten

Country Status (8)

Country Link
US (1) US6740166B2 (de)
EP (1) EP1108468B1 (de)
JP (1) JP3481586B2 (de)
KR (1) KR100330749B1 (de)
AT (1) ATE268217T1 (de)
DE (1) DE60011215T2 (de)
SG (1) SG98002A1 (de)
TW (1) TW466565B (de)

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US20040069227A1 (en) 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
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US6994319B2 (en) * 2003-01-29 2006-02-07 Applied Materials, Inc. Membrane gas valve for pulsing a gas
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US7342984B1 (en) 2003-04-03 2008-03-11 Zilog, Inc. Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character
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Also Published As

Publication number Publication date
JP3481586B2 (ja) 2003-12-22
TW466565B (en) 2001-12-01
DE60011215D1 (de) 2004-07-08
JP2001217232A (ja) 2001-08-10
KR100330749B1 (ko) 2002-04-03
EP1108468B1 (de) 2004-06-02
US20020134307A1 (en) 2002-09-26
KR20010056876A (ko) 2001-07-04
US6740166B2 (en) 2004-05-25
DE60011215T2 (de) 2005-07-07
SG98002A1 (en) 2003-08-20
EP1108468A1 (de) 2001-06-20

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties