ATE281909T1 - Vorrichtung und verfahren zum spalten - Google Patents

Vorrichtung und verfahren zum spalten

Info

Publication number
ATE281909T1
ATE281909T1 AT98310462T AT98310462T ATE281909T1 AT E281909 T1 ATE281909 T1 AT E281909T1 AT 98310462 T AT98310462 T AT 98310462T AT 98310462 T AT98310462 T AT 98310462T AT E281909 T1 ATE281909 T1 AT E281909T1
Authority
AT
Austria
Prior art keywords
bonded substrate
substrate stack
porous layer
stack
jet
Prior art date
Application number
AT98310462T
Other languages
English (en)
Inventor
Kazutaka Yanagita
Takao Yonehara
Kazuaki Omi
Kiyofumi Sakaguchi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP36101697A external-priority patent/JPH11195563A/ja
Priority claimed from JP36101297A external-priority patent/JPH11195568A/ja
Priority claimed from JP4530898A external-priority patent/JPH11243040A/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE281909T1 publication Critical patent/ATE281909T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
    • B26F3/00—Severing by means other than cutting; Apparatus therefor
    • B26F3/004—Severing by means other than cutting; Apparatus therefor by means of a fluid jet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/934—Apparatus having delaminating means adapted for delaminating a specified article
    • Y10S156/941—Means for delaminating semiconductive product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1126—Using direct fluid current against work during delaminating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1126—Using direct fluid current against work during delaminating
    • Y10T156/1137—Using air blast directly against work during delaminating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1928—Differential fluid pressure delaminating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1928—Differential fluid pressure delaminating means
    • Y10T156/1933—Spraying delaminating means [e.g., atomizer, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1928—Differential fluid pressure delaminating means
    • Y10T156/1933—Spraying delaminating means [e.g., atomizer, etc.
    • Y10T156/1939—Air blasting delaminating means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49815—Disassembling
    • Y10T29/49821—Disassembling by altering or destroying work part or connector
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/364—By fluid blast and/or suction

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Forests & Forestry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
AT98310462T 1997-12-26 1998-12-18 Vorrichtung und verfahren zum spalten ATE281909T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP36101697A JPH11195563A (ja) 1997-12-26 1997-12-26 試料の分離装置及びその方法並びに基板の製造方法
JP36101297A JPH11195568A (ja) 1997-12-26 1997-12-26 試料の分離装置及びその方法並びに基板の製造方法
JP4530898A JPH11243040A (ja) 1998-02-26 1998-02-26 試料の分離装置及び分離方法並びに基板の製造方法

Publications (1)

Publication Number Publication Date
ATE281909T1 true ATE281909T1 (de) 2004-11-15

Family

ID=27292180

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98310462T ATE281909T1 (de) 1997-12-26 1998-12-18 Vorrichtung und verfahren zum spalten

Country Status (8)

Country Link
US (3) US6418999B1 (de)
EP (1) EP0925888B1 (de)
KR (1) KR100366722B1 (de)
AT (1) ATE281909T1 (de)
AU (1) AU717785B2 (de)
DE (1) DE69827459T2 (de)
SG (2) SG70141A1 (de)
TW (1) TW429464B (de)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2233127C (en) 1997-03-27 2004-07-06 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
JP2000150836A (ja) 1998-11-06 2000-05-30 Canon Inc 試料の処理システム
US6672358B2 (en) 1998-11-06 2004-01-06 Canon Kabushiki Kaisha Sample processing system
TW484184B (en) * 1998-11-06 2002-04-21 Canon Kk Sample separating apparatus and method, and substrate manufacturing method
FR2796491B1 (fr) * 1999-07-12 2001-08-31 Commissariat Energie Atomique Procede de decollement de deux elements et dispositif pour sa mise en oeuvre
US6653205B2 (en) 1999-12-08 2003-11-25 Canon Kabushiki Kaisha Composite member separating method, thin film manufacturing method, and composite member separating apparatus
FR2802340B1 (fr) * 1999-12-13 2003-09-05 Commissariat Energie Atomique Structure comportant des cellules photovoltaiques et procede de realisation
KR100742790B1 (ko) 2000-04-14 2007-07-25 에스. 오. 이. 떼끄 씰리꽁 오 냉쉴라또흐 떼끄놀로지 특히 반도체 재료(들)로 제조된 기판 또는 잉곳에서 적어도 하나의 박층을 절단하는 방법 및 장치
JP3580227B2 (ja) * 2000-06-21 2004-10-20 三菱住友シリコン株式会社 複合基板の分離方法及び分離装置
FR2811807B1 (fr) 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
JP2002075917A (ja) * 2000-08-25 2002-03-15 Canon Inc 試料の分離装置及び分離方法
US6491083B2 (en) * 2001-02-06 2002-12-10 Anadigics, Inc. Wafer demount receptacle for separation of thinned wafer from mounting carrier
FR2823373B1 (fr) * 2001-04-10 2005-02-04 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
JP2002353423A (ja) * 2001-05-25 2002-12-06 Canon Inc 板部材の分離装置及び処理方法
JP2002353081A (ja) * 2001-05-25 2002-12-06 Canon Inc 板部材の分離装置及び分離方法
FR2830983B1 (fr) 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
FR2834380B1 (fr) * 2002-01-03 2005-02-18 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
FR2834381B1 (fr) 2002-01-03 2004-02-27 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
US7176108B2 (en) 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
US7187162B2 (en) * 2002-12-16 2007-03-06 S.O.I.Tec Silicon On Insulator Technologies S.A. Tools and methods for disuniting semiconductor wafers
FR2859312B1 (fr) * 2003-09-02 2006-02-17 Soitec Silicon On Insulator Scellement metallique multifonction
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
US7672558B2 (en) * 2004-01-12 2010-03-02 Honeywell International, Inc. Silicon optical device
US7217584B2 (en) * 2004-03-18 2007-05-15 Honeywell International Inc. Bonded thin-film structures for optical modulators and methods of manufacture
US7177489B2 (en) * 2004-03-18 2007-02-13 Honeywell International, Inc. Silicon-insulator-silicon thin-film structures for optical modulators and methods of manufacture
US7149388B2 (en) * 2004-03-18 2006-12-12 Honeywell International, Inc. Low loss contact structures for silicon based optical modulators and methods of manufacture
US20050214989A1 (en) * 2004-03-29 2005-09-29 Honeywell International Inc. Silicon optoelectronic device
TWI413152B (zh) 2005-03-01 2013-10-21 半導體能源研究所股份有限公司 半導體裝置製造方法
FR2886051B1 (fr) 2005-05-20 2007-08-10 Commissariat Energie Atomique Procede de detachement d'un film mince
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
US20070101927A1 (en) * 2005-11-10 2007-05-10 Honeywell International Inc. Silicon based optical waveguide structures and methods of manufacture
US7362443B2 (en) 2005-11-17 2008-04-22 Honeywell International Inc. Optical gyro with free space resonator and method for sensing inertial rotation rate
KR100898793B1 (ko) * 2005-12-29 2009-05-20 엘지디스플레이 주식회사 액정표시소자용 기판 합착 장치
FR2899378B1 (fr) 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
US7463360B2 (en) * 2006-04-18 2008-12-09 Honeywell International Inc. Optical resonator gyro with integrated external cavity beam generator
US20070274655A1 (en) * 2006-04-26 2007-11-29 Honeywell International Inc. Low-loss optical device structure
US7454102B2 (en) 2006-04-26 2008-11-18 Honeywell International Inc. Optical coupling structure
US7535576B2 (en) * 2006-05-15 2009-05-19 Honeywell International, Inc. Integrated optical rotation sensor and method for sensing rotation rate
DE102006056339A1 (de) * 2006-11-29 2008-09-11 Bernhard Brain Vorrichtung zum Trennen von zwei aufeinander angeordneten scheibenförmigen Elementen bei der Entnahme
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
TW200832505A (en) * 2007-01-18 2008-08-01 Silicon Genesis Corp Controlled substrate cleave process and apparatus
US20090139655A1 (en) * 2007-11-30 2009-06-04 Xiang Yang Feng Adhesive seal peeling device for a hard disk drive
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
US20090254016A1 (en) * 2008-04-08 2009-10-08 Max Joseph Wallack Method and apparatus for cushioning wrists
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
JP2013033925A (ja) * 2011-07-01 2013-02-14 Tokyo Electron Ltd 洗浄方法、プログラム、コンピュータ記憶媒体、洗浄装置及び剥離システム
US8945344B2 (en) * 2012-07-20 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods of separating bonded wafers
JP6016108B2 (ja) * 2012-12-18 2016-10-26 旭硝子株式会社 基板の剥離装置及び剥離方法並びに電子デバイスの製造方法
JP6301137B2 (ja) * 2014-01-22 2018-03-28 株式会社ディスコ 分離装置
KR102305505B1 (ko) * 2014-09-29 2021-09-24 삼성전자주식회사 웨이퍼 서포팅 시스템 디본딩 이니시에이터 및 웨이퍼 서포팅 시스템 디본딩 방법
CN107665848B (zh) * 2016-07-29 2020-08-25 上海微电子装备（集团）股份有限公司 一种解键合调平装置及解键合方法
US20180230389A1 (en) 2017-02-12 2018-08-16 Magēmā Technology, LLC Multi-Stage Process and Device for Reducing Environmental Contaminates in Heavy Marine Fuel Oil
KR102788502B1 (ko) * 2023-07-27 2025-04-01 한국기계연구원 효과적인 디본딩이 가능한 웨이퍼 모듈, 및 이의 본딩 및 디본딩 방법

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0191504B1 (de) 1980-04-10 1989-08-16 Massachusetts Institute Of Technology Verfahren zur Herstellung von Blättern aus kristallinem Material
US4466852A (en) 1983-10-27 1984-08-21 At&T Technologies, Inc. Method and apparatus for demounting wafers
JPH02106300A (ja) 1988-10-12 1990-04-18 Sumikura Ind Co Ltd 面の被覆材ハツリ方法
US5131968A (en) * 1990-07-31 1992-07-21 Motorola, Inc. Gradient chuck method for wafer bonding employing a convex pressure
ATE259098T1 (de) 1990-08-03 2004-02-15 Canon Kk Verfahren zur herstellung eines soi-substrats
DE4100526A1 (de) 1991-01-10 1992-07-16 Wacker Chemitronic Vorrichtung und verfahren zum automatischen vereinzeln von gestapelten scheiben
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP3609109B2 (ja) * 1992-12-08 2005-01-12 フロー インターナショナル コーポレイション 超高圧ファンジェットノズル
US5961053A (en) 1994-02-18 1999-10-05 Flow International Corporation Ultrahigh-pressure fan jet nozzle
JPH06246576A (ja) 1993-02-24 1994-09-06 Shin Meiwa Ind Co Ltd 非接触式チャック装置
JPH06268051A (ja) * 1993-03-10 1994-09-22 Mitsubishi Electric Corp ウエハ剥し装置
JPH06285845A (ja) 1993-03-31 1994-10-11 Komatsu Ltd スライシングマシン
JP3111300B2 (ja) 1993-10-20 2000-11-20 株式会社日立製作所 半導体素子のシール式スピンエッチング装置
JP3293736B2 (ja) * 1996-02-28 2002-06-17 キヤノン株式会社 半導体基板の作製方法および貼り合わせ基体
JP3257580B2 (ja) 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
FR2725074B1 (fr) 1994-09-22 1996-12-20 Commissariat Energie Atomique Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
JP3381443B2 (ja) 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法
CA2182442C (en) 1995-08-02 2000-10-24 Kiyofumi Sakaguchi Semiconductor substrate and fabrication method for the same
KR0165467B1 (ko) * 1995-10-31 1999-02-01 김광호 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법
SG65697A1 (en) 1996-11-15 1999-06-22 Canon Kk Process for producing semiconductor article
ATE261612T1 (de) 1996-12-18 2004-03-15 Canon Kk Vefahren zum herstellen eines halbleiterartikels unter verwendung eines substrates mit einer porösen halbleiterschicht
SG71094A1 (en) 1997-03-26 2000-03-21 Canon Kk Thin film formation using laser beam heating to separate layers
CA2233127C (en) * 1997-03-27 2004-07-06 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
EP0995227A4 (de) 1997-05-12 2000-07-05 Silicon Genesis Corp Kontrolliertes spaltungsverfahren
US5994207A (en) 1997-05-12 1999-11-30 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
JPH115064A (ja) * 1997-06-16 1999-01-12 Canon Inc 試料の分離装置及びその方法並びに基板の製造方法
US6263941B1 (en) * 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates

Also Published As

Publication number Publication date
US20020134504A1 (en) 2002-09-26
SG70141A1 (en) 2000-01-25
KR19990063512A (ko) 1999-07-26
EP0925888B1 (de) 2004-11-10
US6521078B2 (en) 2003-02-18
US6860963B2 (en) 2005-03-01
US6418999B1 (en) 2002-07-16
TW429464B (en) 2001-04-11
SG87916A1 (en) 2002-04-16
KR100366722B1 (ko) 2003-02-19
DE69827459D1 (de) 2004-12-16
EP0925888A1 (de) 1999-06-30
US20030102082A1 (en) 2003-06-05
AU9819098A (en) 1999-08-26
AU717785B2 (en) 2000-03-30
DE69827459T2 (de) 2005-10-20

Similar Documents

Publication Publication Date Title
DE69827459D1 (de) Vorrichtung und Verfahren zum Spalten
ATE246577T1 (de) Verfahren zum spalten
AU5966298A (en) Method and apparatus for separating composite member using fluid
CA2240701A1 (en) Apparatus and method of separating sample and substrate fabrication method
ATE193335T1 (de) Verfahren zum auftragen von wolframnitrid unter verwendung eines silicium enthaltenden gases
MX9304736A (es) Sistema y metodo para remover hidrocarburos a partir de mezclas gaseosas.
CA2105743A1 (en) Electrostatic Discharge Control During Jet Spray
ATE210556T1 (de) Flüssigkeitsausstosskopf, vorrichtung zum ausstossen von flüssigkeit und verfahren zum ausstossen von flüssigkeit
WO2002013236A3 (en) Method and apparatus for removing unwanted substance from semiconductor wafer
DE68916947D1 (de) Beseitigung von gelöschtem gas aus der tinte in einem tintenstrahlsystem.
DE60310491D1 (de) Bilderzeugungsverfahren und bedruckter Gegenstand
WO2005056202A3 (en) Apparatus and method for cleaning surfaces
DE69529495D1 (de) Gasbetätigtes element zum austragen von genmaterial
WO2009050953A1 (ja) 板分離装置
ATE226104T1 (de) Verfahren und vorrichtung zum entfernen von gasblasen aus einer auszugebenden viskosen flüssigkeit
EP1243346A3 (de) Beschichtungsvorrichtung und -verfahren
ATE206527T1 (de) Verfahren und vorrichtung zum abmanteln von faseroptischen bandkabeln
CA2209877A1 (en) A liquid discharging method accompanied by the displacement of a movable member, a liquid jet head for implementing such method, and a liquid jet apparatus for the implementation thereof
CA2040120A1 (en) Discharge recovery method for an ink jet recording head and device for carrying out the same
EP0896874A3 (de) Spannkluppenreinigungs- Verfahren und Vorrichtung
CA2185264A1 (en) Upgrading Heavy Oil by Ultrafiltration Using Ceramic Membrane
MX9606283A (es) Aparato y sistema para impresion de tinta liquida.
ATE294275T1 (de) Stofflöser und verfahren zur rückgewinnung von produktionsbedingten papierabfällen
ATE127033T1 (de) Verfahren zum entfernen von schadstoffen aus substrattrocknungsgas.
JPS62269826A (ja) 半導体ウエハの浮遊吸着方法

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties