ATE313412T1 - System zur endpunktbestimmung beim chemisch- mechanischen polieren - Google Patents

System zur endpunktbestimmung beim chemisch- mechanischen polieren

Info

Publication number
ATE313412T1
ATE313412T1 AT01950481T AT01950481T ATE313412T1 AT E313412 T1 ATE313412 T1 AT E313412T1 AT 01950481 T AT01950481 T AT 01950481T AT 01950481 T AT01950481 T AT 01950481T AT E313412 T1 ATE313412 T1 AT E313412T1
Authority
AT
Austria
Prior art keywords
point
polishing pad
chemical
mechanical polishing
point determination
Prior art date
Application number
AT01950481T
Other languages
English (en)
Inventor
Katrina A Mikhaylich
Mike Ravkin
Yehiel Gotkis
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE313412T1 publication Critical patent/ATE313412T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
AT01950481T 2001-06-26 2001-06-26 System zur endpunktbestimmung beim chemisch- mechanischen polieren ATE313412T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2001/020283 WO2003002301A1 (en) 2001-06-26 2001-06-26 End point detection system for chemical mechanical polishing applications

Publications (1)

Publication Number Publication Date
ATE313412T1 true ATE313412T1 (de) 2006-01-15

Family

ID=21742667

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01950481T ATE313412T1 (de) 2001-06-26 2001-06-26 System zur endpunktbestimmung beim chemisch- mechanischen polieren

Country Status (6)

Country Link
EP (1) EP1399294B1 (de)
JP (1) JP5027377B2 (de)
CN (1) CN1246125C (de)
AT (1) ATE313412T1 (de)
DE (1) DE60116148T2 (de)
WO (1) WO2003002301A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050066739A1 (en) * 2003-09-26 2005-03-31 Lam Research Corporation Method and apparatus for wafer mechanical stress monitoring and wafer thermal stress monitoring
CN100369713C (zh) * 2005-04-11 2008-02-20 广东工业大学 一种化学机械法金刚石膜抛光装置及其抛光方法
JP5481417B2 (ja) * 2010-08-04 2014-04-23 株式会社東芝 半導体装置の製造方法
JP2012148376A (ja) * 2011-01-20 2012-08-09 Ebara Corp 研磨方法及び研磨装置
WO2013015750A1 (en) * 2011-07-25 2013-01-31 Hoya Glass Disk (Thailand) Ltd A method of manufacturing glass substrates for information recording medium
CN102441839B (zh) * 2011-11-11 2014-06-04 上海华力微电子有限公司 提高固定研磨料在研磨垫上进行cmp工艺稳定性的方法
CN102528664A (zh) * 2012-01-11 2012-07-04 上海理工大学 磨削砂轮表面磨粒温度测量装置
JP6196858B2 (ja) * 2012-09-24 2017-09-13 株式会社荏原製作所 研磨方法および研磨装置
CN103978421B (zh) * 2013-02-07 2017-04-19 中芯国际集成电路制造(上海)有限公司 终点侦测方法及化学机械抛光系统的抛光方法
CN109719613B (zh) * 2017-10-30 2021-09-24 凯斯科技股份有限公司 基板处理装置及方法
CN109719615A (zh) * 2017-10-30 2019-05-07 凯斯科技股份有限公司 基板处理装置
CN109719617B (zh) * 2017-10-30 2021-12-17 凯斯科技股份有限公司 基板处理装置
TWI845444B (zh) * 2018-04-03 2024-06-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
EP3632254A1 (de) * 2018-10-03 2020-04-08 The Swatch Group Research and Development Ltd Plastikarmband mit verminderter rauigkeit
US11355369B2 (en) 2018-10-15 2022-06-07 Jongpal AHN Method of monitoring surface temperatures of wafers in real time in semiconductor wafer cleaning apparatus and temperature sensor for measuring surface temperatures of wafer
KR101973712B1 (ko) * 2018-10-15 2019-04-29 안종팔 반도체 웨이퍼 세정장치에서 웨이퍼 표면 온도 실시간 모니터링 방법
KR20200068785A (ko) * 2018-12-05 2020-06-16 삼성디스플레이 주식회사 연마 모니터링 시스템 및 연마 모니터링 방법
CN110900337B (zh) * 2019-12-06 2020-10-30 宿迁学院 一种用于金属件打磨的高精度打磨磨床
CN115943016A (zh) * 2020-07-14 2023-04-07 应用材料公司 在化学机械抛光期间检测不合格衬底处理事件的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794452A (ja) * 1993-09-22 1995-04-07 Toshiba Corp 研磨方法及び研磨装置
EP0616362A3 (de) * 1993-03-15 1995-06-21 Tokyo Shibaura Electric Co Verfahren zum Polieren von Werkstücken und Vorrichtung dafür.
JPH0724708A (ja) * 1993-07-15 1995-01-27 Toshiba Corp 研磨方法及び研磨装置
US5597442A (en) * 1995-10-16 1997-01-28 Taiwan Semiconductor Manufacturing Company Ltd. Chemical/mechanical planarization (CMP) endpoint method using measurement of polishing pad temperature
JPH09148281A (ja) * 1995-11-24 1997-06-06 Matsushita Electric Ind Co Ltd 研磨装置及び研磨方法
US6111634A (en) * 1997-05-28 2000-08-29 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing
US6146248A (en) * 1997-05-28 2000-11-14 Lam Research Corporation Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher
US6007408A (en) * 1997-08-21 1999-12-28 Micron Technology, Inc. Method and apparatus for endpointing mechanical and chemical-mechanical polishing of substrates
TW398036B (en) * 1998-08-18 2000-07-11 Promos Technologies Inc Method of monitoring of chemical mechanical polishing end point and uniformity
US6325706B1 (en) * 1998-10-29 2001-12-04 Lam Research Corporation Use of zeta potential during chemical mechanical polishing for end point detection
JP2000340538A (ja) * 1999-05-31 2000-12-08 Hitachi Ltd 基板の平坦化方法および平坦化加工装置とそれを用いた半導体装置の製造方法

Also Published As

Publication number Publication date
CN1246125C (zh) 2006-03-22
WO2003002301A1 (en) 2003-01-09
DE60116148T2 (de) 2006-08-31
CN1520348A (zh) 2004-08-11
EP1399294B1 (de) 2005-12-21
JP2004522310A (ja) 2004-07-22
EP1399294A1 (de) 2004-03-24
DE60116148D1 (de) 2006-01-26
JP5027377B2 (ja) 2012-09-19

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