ATE321337T1 - Verfahren zur herstellung von speicherkondensatoren-kontaktöffnungen - Google Patents

Verfahren zur herstellung von speicherkondensatoren-kontaktöffnungen

Info

Publication number
ATE321337T1
ATE321337T1 AT00962009T AT00962009T ATE321337T1 AT E321337 T1 ATE321337 T1 AT E321337T1 AT 00962009 T AT00962009 T AT 00962009T AT 00962009 T AT00962009 T AT 00962009T AT E321337 T1 ATE321337 T1 AT E321337T1
Authority
AT
Austria
Prior art keywords
over
word lines
insulating material
lines
bit lines
Prior art date
Application number
AT00962009T
Other languages
English (en)
Inventor
Luan C Tran
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE321337T1 publication Critical patent/ATE321337T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
AT00962009T 1999-07-22 2000-07-24 Verfahren zur herstellung von speicherkondensatoren-kontaktöffnungen ATE321337T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/359,956 US6589876B1 (en) 1999-07-22 1999-07-22 Methods of forming conductive capacitor plugs, methods of forming capacitor contact openings, and methods of forming memory arrays

Publications (1)

Publication Number Publication Date
ATE321337T1 true ATE321337T1 (de) 2006-04-15

Family

ID=23415971

Family Applications (3)

Application Number Title Priority Date Filing Date
AT06004528T ATE387010T1 (de) 1999-07-22 2000-07-24 Verfahren zur herstellung von speicherarrays
AT06004477T ATE433197T1 (de) 1999-07-22 2000-07-24 Verfahren zur herstellung von speicherkondensatorkontaktöffnungen
AT00962009T ATE321337T1 (de) 1999-07-22 2000-07-24 Verfahren zur herstellung von speicherkondensatoren-kontaktöffnungen

Family Applications Before (2)

Application Number Title Priority Date Filing Date
AT06004528T ATE387010T1 (de) 1999-07-22 2000-07-24 Verfahren zur herstellung von speicherarrays
AT06004477T ATE433197T1 (de) 1999-07-22 2000-07-24 Verfahren zur herstellung von speicherkondensatorkontaktöffnungen

Country Status (8)

Country Link
US (3) US6589876B1 (de)
EP (4) EP1277209B1 (de)
JP (1) JP2003529915A (de)
KR (1) KR100473910B1 (de)
AT (3) ATE387010T1 (de)
AU (1) AU7387900A (de)
DE (4) DE60038135T2 (de)
WO (1) WO2001008159A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232168B1 (en) 2000-08-25 2001-05-15 Micron Technology, Inc. Memory circuitry and method of forming memory circuitry
US6921692B2 (en) * 2003-07-07 2005-07-26 Micron Technology, Inc. Methods of forming memory circuitry
US8022468B1 (en) * 2005-03-29 2011-09-20 Spansion Llc Ultraviolet radiation blocking interlayer dielectric
JP2012204560A (ja) * 2011-03-25 2012-10-22 Elpida Memory Inc 半導体装置及びその製造方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5384287A (en) 1991-12-13 1995-01-24 Nec Corporation Method of forming a semiconductor device having self-aligned contact holes
JP3010945B2 (ja) 1991-12-13 2000-02-21 日本電気株式会社 セルフアライン・コンタクト孔の形成方法
US5296400A (en) * 1991-12-14 1994-03-22 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a contact of a highly integrated semiconductor device
KR950000660B1 (ko) 1992-02-29 1995-01-27 현대전자산업 주식회사 고집적 소자용 미세콘택 형성방법
JP2522616B2 (ja) 1992-03-24 1996-08-07 株式会社東芝 半導体装置の製造方法
US5356834A (en) 1992-03-24 1994-10-18 Kabushiki Kaisha Toshiba Method of forming contact windows in semiconductor devices
US5383088A (en) 1993-08-09 1995-01-17 International Business Machines Corporation Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics
JPH07142597A (ja) 1993-11-12 1995-06-02 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
JP3571088B2 (ja) 1994-10-25 2004-09-29 沖電気工業株式会社 Ｄｒａｍセルコンタクトの構造及びその形成方法
US5488011A (en) 1994-11-08 1996-01-30 Micron Technology, Inc. Method of forming contact areas between vertical conductors
KR0140657B1 (ko) 1994-12-31 1998-06-01 김주용 반도체 소자의 제조방법
JP3623834B2 (ja) 1995-01-31 2005-02-23 富士通株式会社 半導体記憶装置及びその製造方法
US5604147A (en) * 1995-05-12 1997-02-18 Micron Technology, Inc. Method of forming a cylindrical container stacked capacitor
JPH0974174A (ja) 1995-09-01 1997-03-18 Texas Instr Japan Ltd 半導体装置及びその製造方法
KR0155886B1 (ko) 1995-09-19 1998-10-15 김광호 고집적 dram 셀의 제조방법
JP3703885B2 (ja) 1995-09-29 2005-10-05 株式会社東芝 半導体記憶装置とその製造方法
JPH09307076A (ja) * 1996-05-16 1997-11-28 Nec Corp 半導体装置の製造方法
US5721154A (en) * 1996-06-18 1998-02-24 Vanguard International Semiconductor Method for fabricating a four fin capacitor structure
US5789289A (en) 1996-06-18 1998-08-04 Vanguard International Semiconductor Corporation Method for fabricating vertical fin capacitor structures
US5670404A (en) * 1996-06-21 1997-09-23 Industrial Technology Research Institute Method for making self-aligned bit line contacts on a DRAM circuit having a planarized insulating layer
US5706164A (en) 1996-07-17 1998-01-06 Vangaurd International Semiconductor Corporation Method of fabricating high density integrated circuits, containing stacked capacitor DRAM devices, using elevated trench isolation and isolation spacers
US5792687A (en) * 1996-08-01 1998-08-11 Vanguard International Semiconductor Corporation Method for fabricating high density integrated circuits using oxide and polysilicon spacers
US5688713A (en) 1996-08-26 1997-11-18 Vanguard International Semiconductor Corporation Method of manufacturing a DRAM cell having a double-crown capacitor using polysilicon and nitride spacers
US5748521A (en) * 1996-11-06 1998-05-05 Samsung Electronics Co., Ltd. Metal plug capacitor structures for integrated circuit devices and related methods
US5780338A (en) 1997-04-11 1998-07-14 Vanguard International Semiconductor Corporation Method for manufacturing crown-shaped capacitors for dynamic random access memory integrated circuits
JPH10289986A (ja) 1997-04-15 1998-10-27 Fujitsu Ltd 半導体装置およびその製造方法
US6060351A (en) 1997-12-24 2000-05-09 Micron Technology, Inc. Process for forming capacitor over bit line memory cell
US6200199B1 (en) 1998-03-31 2001-03-13 Applied Materials, Inc. Chemical mechanical polishing conditioner
JP3500063B2 (ja) 1998-04-23 2004-02-23 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
US5837577A (en) 1998-04-24 1998-11-17 Vanguard International Semiconductor Corporation Method for making self-aligned node contacts to bit lines for capacitor-over-bit-line structures on dynamic random access memory (DRAM) devices
US5918120A (en) * 1998-07-24 1999-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating capacitor-over-bit line (COB) dynamic random access memory (DRAM) using tungsten landing plug contacts and Ti/TiN bit lines
US6458649B1 (en) * 1999-07-22 2002-10-01 Micron Technology, Inc. Methods of forming capacitor-over-bit line memory cells

Also Published As

Publication number Publication date
EP1662562A2 (de) 2006-05-31
DE60026860D1 (de) 2006-05-11
DE60042347D1 (de) 2009-07-16
KR20020085866A (ko) 2002-11-16
EP1662561A2 (de) 2006-05-31
ATE387010T1 (de) 2008-03-15
EP1662562A3 (de) 2006-06-28
DE60026860T2 (de) 2007-03-15
DE10084848T1 (de) 2002-08-29
KR100473910B1 (ko) 2005-03-10
US7449390B2 (en) 2008-11-11
EP1662563A3 (de) 2006-06-28
US20050213369A1 (en) 2005-09-29
EP1662561A3 (de) 2006-06-28
EP1662563B1 (de) 2008-02-20
US20040097085A1 (en) 2004-05-20
WO2001008159A3 (en) 2002-11-07
WO2001008159A2 (en) 2001-02-01
DE60038135T2 (de) 2009-02-12
US6964910B2 (en) 2005-11-15
EP1277209B1 (de) 2006-03-22
EP1277209A2 (de) 2003-01-22
US6589876B1 (en) 2003-07-08
AU7387900A (en) 2001-02-13
DE60038135D1 (de) 2008-04-03
EP1662563A2 (de) 2006-05-31
JP2003529915A (ja) 2003-10-07
ATE433197T1 (de) 2009-06-15
EP1662561B1 (de) 2009-06-03

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