ATE32806T1 - Verfahren zum herstellen eines gemaess kundenwunsch programmierten nur-lese-speichers (rom). - Google Patents
Verfahren zum herstellen eines gemaess kundenwunsch programmierten nur-lese-speichers (rom).Info
- Publication number
- ATE32806T1 ATE32806T1 AT84303740T AT84303740T ATE32806T1 AT E32806 T1 ATE32806 T1 AT E32806T1 AT 84303740 T AT84303740 T AT 84303740T AT 84303740 T AT84303740 T AT 84303740T AT E32806 T1 ATE32806 T1 AT E32806T1
- Authority
- AT
- Austria
- Prior art keywords
- transistors
- ions
- silicon nitride
- layer
- implanted
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
- H10B20/38—Doping programmed, e.g. mask ROM
- H10B20/383—Channel doping programmed
Landscapes
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/516,064 US4513494A (en) | 1983-07-19 | 1983-07-19 | Late mask process for programming read only memories |
| EP84303740A EP0132033B1 (de) | 1983-07-19 | 1984-06-04 | Verfahren zum Herstellen eines gemäss Kundenwunsch programmierten Nur-Lese-Speichers (ROM) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE32806T1 true ATE32806T1 (de) | 1988-03-15 |
Family
ID=24053976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT84303740T ATE32806T1 (de) | 1983-07-19 | 1984-06-04 | Verfahren zum herstellen eines gemaess kundenwunsch programmierten nur-lese-speichers (rom). |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4513494A (de) |
| EP (1) | EP0132033B1 (de) |
| JP (1) | JPS6028263A (de) |
| AT (1) | ATE32806T1 (de) |
| CA (1) | CA1204863A (de) |
| DE (1) | DE3469645D1 (de) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60116167A (ja) * | 1983-11-29 | 1985-06-22 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
| US4598460A (en) * | 1984-12-10 | 1986-07-08 | Solid State Scientific, Inc. | Method of making a CMOS EPROM with independently selectable thresholds |
| KR890004962B1 (ko) * | 1985-02-08 | 1989-12-02 | 가부시끼가이샤 도오시바 | 반도체장치 및 그 제조방법 |
| US4686000A (en) * | 1985-04-02 | 1987-08-11 | Heath Barbara A | Self-aligned contact process |
| US4649629A (en) * | 1985-07-29 | 1987-03-17 | Thomson Components - Mostek Corp. | Method of late programming a read only memory |
| KR900000065B1 (ko) * | 1985-08-13 | 1990-01-19 | 가부시끼가이샤 도오시바 | 독출전용 반도체기억장치와 그 제조방법 |
| IT1215558B (it) * | 1987-06-11 | 1990-02-14 | Sgs Microelettronica Spa | Procedimento di programmazione per memorie rom e tecnolgia mos con ossido di gate e giunzioni sottili. |
| US4843026A (en) * | 1987-09-24 | 1989-06-27 | Intel Corporation | Architecture modification for improved ROM security |
| US5091328A (en) * | 1989-11-21 | 1992-02-25 | National Semiconductor Corporation | Method of late programming MOS devices |
| IT1239707B (it) * | 1990-03-15 | 1993-11-15 | St Microelectrics Srl | Processo per la realizzazione di una cella di memoria rom a bassa capacita' di drain |
| US5486487A (en) * | 1990-03-30 | 1996-01-23 | Sgs-Thomson Microelectronics S.R.L. | Method for adjusting the threshold of a read-only memory to achieve low capacitance and high breakdown voltage |
| JPH0487370A (ja) * | 1990-07-30 | 1992-03-19 | Sharp Corp | 半導体装置の製造方法 |
| US5200802A (en) * | 1991-05-24 | 1993-04-06 | National Semiconductor Corporation | Semiconductor ROM cell programmed using source mask |
| JPH053304A (ja) * | 1991-06-25 | 1993-01-08 | Sony Corp | マスクｒｏｍの製造方法 |
| JPH0532259U (ja) * | 1991-10-11 | 1993-04-27 | トヨタ車体株式会社 | 車両キヤブとリヤボデー間の落下物防止装置 |
| JPH05304277A (ja) * | 1992-04-28 | 1993-11-16 | Rohm Co Ltd | 半導体装置の製法 |
| US5432103A (en) * | 1992-06-22 | 1995-07-11 | National Semiconductor Corporation | Method of making semiconductor ROM cell programmed using source mask |
| EP0575688B1 (de) * | 1992-06-26 | 1998-05-27 | STMicroelectronics S.r.l. | Programmierung von LDD-ROM-Zellen |
| US5571738A (en) * | 1992-09-21 | 1996-11-05 | Advanced Micro Devices, Inc. | Method of making poly LDD self-aligned channel transistors |
| US5378641A (en) * | 1993-02-22 | 1995-01-03 | Micron Semiconductor, Inc. | Electrically conductive substrate interconnect continuity region and method of forming same with an angled implant |
| US5858845A (en) * | 1994-09-27 | 1999-01-12 | Micron Technology, Inc. | Electrically conductive substrate interconnect continuity region and method of forming same with an angled implant |
| US5306657A (en) * | 1993-03-22 | 1994-04-26 | United Microelectronics Corporation | Process for forming an FET read only memory device |
| US5736420A (en) * | 1993-08-20 | 1998-04-07 | National Semiconductor Corporation | Process for fabricating read only memories, with programming step performed midway through the fabrication process |
| JPH07273224A (ja) * | 1994-03-29 | 1995-10-20 | Sharp Corp | 半導体装置の製造方法 |
| US5514609A (en) * | 1994-05-13 | 1996-05-07 | Mosel Vitelic, Inc. | Through glass ROM code implant to reduce product delivering time |
| US5576235A (en) * | 1994-06-23 | 1996-11-19 | United Microelectronics Corporation | ROM coding process with self-aligned implantation and the ROM produced thereby |
| US5529942A (en) * | 1994-06-23 | 1996-06-25 | United Microelectronics Corp. | Self-aligned coding process for mask ROM |
| US6230071B1 (en) * | 1996-05-24 | 2001-05-08 | The Regents Of The University Of California | Depth enhancement of ion sensitized data |
| US6020241A (en) * | 1997-12-22 | 2000-02-01 | Taiwan Semiconductor Manufacturing Company | Post metal code engineering for a ROM |
| ITRM20010298A1 (it) * | 2001-05-31 | 2002-12-02 | Micron Technology Inc | Interfaccia di comando di utilizzatore con decodificatore programmabile. |
| JP2002343894A (ja) * | 2001-05-16 | 2002-11-29 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| US6853587B2 (en) | 2002-06-21 | 2005-02-08 | Micron Technology, Inc. | Vertical NROM having a storage density of 1 bit per 1F2 |
| US6873550B2 (en) | 2003-08-07 | 2005-03-29 | Micron Technology, Inc. | Method for programming and erasing an NROM cell |
| US6830963B1 (en) | 2003-10-09 | 2004-12-14 | Micron Technology, Inc. | Fully depleted silicon-on-insulator CMOS logic |
| US7202523B2 (en) | 2003-11-17 | 2007-04-10 | Micron Technology, Inc. | NROM flash memory devices on ultrathin silicon |
| US7157769B2 (en) | 2003-12-18 | 2007-01-02 | Micron Technology, Inc. | Flash memory having a high-permittivity tunnel dielectric |
| US7221018B2 (en) | 2004-02-10 | 2007-05-22 | Micron Technology, Inc. | NROM flash memory with a high-permittivity gate dielectric |
| US6952366B2 (en) | 2004-02-10 | 2005-10-04 | Micron Technology, Inc. | NROM flash memory cell with integrated DRAM |
| US7274068B2 (en) | 2004-05-06 | 2007-09-25 | Micron Technology, Inc. | Ballistic direct injection NROM cell on strained silicon structures |
| US7750414B2 (en) * | 2008-05-29 | 2010-07-06 | International Business Machines Corporation | Structure and method for reducing threshold voltage variation |
| US9069042B2 (en) | 2013-11-05 | 2015-06-30 | Freescale Semiconductor, Inc. | Efficient apparatus and method for testing digital shadow logic around non-logic design structures |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4384399A (en) * | 1978-03-20 | 1983-05-24 | Texas Instruments Incorporated | Method of making a metal programmable MOS read only memory device |
| US4294001A (en) * | 1979-01-08 | 1981-10-13 | Texas Instruments Incorporated | Method of making implant programmable metal gate MOS read only memory |
| US4272303A (en) * | 1978-06-05 | 1981-06-09 | Texas Instruments Incorporated | Method of making post-metal ion beam programmable MOS read only memory |
| US4273303A (en) * | 1979-03-16 | 1981-06-16 | The Boeing Company | Adaptive airplane landing gear |
| US4235011A (en) * | 1979-03-28 | 1980-11-25 | Honeywell Inc. | Semiconductor apparatus |
| US4364167A (en) * | 1979-11-28 | 1982-12-21 | General Motors Corporation | Programming an IGFET read-only-memory |
| US4295209A (en) * | 1979-11-28 | 1981-10-13 | General Motors Corporation | Programming an IGFET read-only-memory |
| US4329186A (en) * | 1979-12-20 | 1982-05-11 | Ibm Corporation | Simultaneously forming fully implanted DMOS together with enhancement and depletion mode MOSFET devices |
| US4356042A (en) * | 1980-11-07 | 1982-10-26 | Mostek Corporation | Method for fabricating a semiconductor read only memory |
| US4406049A (en) * | 1980-12-11 | 1983-09-27 | Rockwell International Corporation | Very high density cells comprising a ROM and method of manufacturing same |
| US4380866A (en) * | 1981-05-04 | 1983-04-26 | Motorola, Inc. | Method of programming ROM by offset masking of selected gates |
| US4364165A (en) * | 1981-05-28 | 1982-12-21 | General Motors Corporation | Late programming using a silicon nitride interlayer |
| US4358889A (en) * | 1981-05-28 | 1982-11-16 | General Motors Corporation | Process for making a late programming enhanced contact ROM |
| JPS5830154A (ja) * | 1981-08-17 | 1983-02-22 | Toshiba Corp | 固定記憶半導体装置およびその製造方法 |
-
1983
- 1983-07-19 US US06/516,064 patent/US4513494A/en not_active Expired - Lifetime
-
1984
- 1984-03-22 CA CA000450194A patent/CA1204863A/en not_active Expired
- 1984-04-05 JP JP59066817A patent/JPS6028263A/ja active Pending
- 1984-06-04 DE DE8484303740T patent/DE3469645D1/de not_active Expired
- 1984-06-04 EP EP84303740A patent/EP0132033B1/de not_active Expired
- 1984-06-04 AT AT84303740T patent/ATE32806T1/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0132033A1 (de) | 1985-01-23 |
| JPS6028263A (ja) | 1985-02-13 |
| DE3469645D1 (en) | 1988-04-07 |
| US4513494A (en) | 1985-04-30 |
| EP0132033B1 (de) | 1988-03-02 |
| CA1204863A (en) | 1986-05-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification | ||
| REN | Ceased due to non-payment of the annual fee |