ATE361532T1 - Herstellung elektronischer bauelemente - Google Patents
Herstellung elektronischer bauelementeInfo
- Publication number
- ATE361532T1 ATE361532T1 AT04768301T AT04768301T ATE361532T1 AT E361532 T1 ATE361532 T1 AT E361532T1 AT 04768301 T AT04768301 T AT 04768301T AT 04768301 T AT04768301 T AT 04768301T AT E361532 T1 ATE361532 T1 AT E361532T1
- Authority
- AT
- Austria
- Prior art keywords
- elements
- electronic device
- underlying
- corresponding portions
- underlying elements
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Developing Agents For Electrophotography (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0320491.4A GB0320491D0 (en) | 2003-09-02 | 2003-09-02 | Multi-level patterning |
| GBGB0329740.5A GB0329740D0 (en) | 2003-09-02 | 2003-12-23 | Multi-layer patterning |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE361532T1 true ATE361532T1 (de) | 2007-05-15 |
Family
ID=34276818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04768301T ATE361532T1 (de) | 2003-09-02 | 2004-09-02 | Herstellung elektronischer bauelemente |
Country Status (4)
| Country | Link |
|---|---|
| EP (2) | EP2166543B1 (de) |
| AT (1) | ATE361532T1 (de) |
| DE (1) | DE602004006283T2 (de) |
| WO (1) | WO2005022664A2 (de) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7102155B2 (en) | 2003-09-04 | 2006-09-05 | Hitachi, Ltd. | Electrode substrate, thin film transistor, display device and their production |
| GB2435717B (en) * | 2003-09-04 | 2008-03-26 | Hitachi Ltd | Active matrix display device |
| EP1670079B1 (de) * | 2004-12-08 | 2010-12-01 | Samsung Mobile Display Co., Ltd. | Methode zur Herstellung einer Leiterstruktur eines Dünnfilmtransistors |
| GB0427563D0 (en) | 2004-12-16 | 2005-01-19 | Plastic Logic Ltd | A method of semiconductor patterning |
| US7723008B2 (en) * | 2005-03-22 | 2010-05-25 | Intel Corporation | Photoactive adhesion promoter in a slam |
| JP2006352083A (ja) * | 2005-05-18 | 2006-12-28 | Ricoh Co Ltd | 有機薄膜トランジスタ及びアクティブマトリックス表示装置 |
| KR100647695B1 (ko) | 2005-05-27 | 2006-11-23 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 그의 제조방법과 이를 구비한평판표시장치 |
| US7655566B2 (en) * | 2005-07-27 | 2010-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| DE102005035589A1 (de) | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Verfahren zur Herstellung eines elektronischen Bauelements |
| ITMI20051901A1 (it) * | 2005-10-10 | 2007-04-11 | St Microelectronics Srl | Processo di fabbricazione di tramsistori a film sottile in materiale organico e transistore |
| JP5066848B2 (ja) * | 2006-02-10 | 2012-11-07 | コニカミノルタホールディングス株式会社 | 薄膜トランジスタの製造方法 |
| EP2005499B1 (de) * | 2006-03-29 | 2013-04-24 | Plastic Logic Limited | Techniken zur bauelementeherstellung mit selbstausgerichteten elektroden |
| US8105643B2 (en) | 2006-05-31 | 2012-01-31 | Cabot Corporation | Process for printing features with smaller dimensions |
| JP5168845B2 (ja) * | 2006-08-07 | 2013-03-27 | 株式会社リコー | 積層構造体、積層構造体を用いた電子素子、これらの製造方法、電子素子アレイ及び表示装置 |
| DE102006047388A1 (de) | 2006-10-06 | 2008-04-17 | Polyic Gmbh & Co. Kg | Feldeffekttransistor sowie elektrische Schaltung |
| EP2111652A1 (de) * | 2007-01-19 | 2009-10-28 | Basf Se | Verfahren zum übertragen von strukturinformationen und vorrichtung hierfür |
| GB2466495B (en) | 2008-12-23 | 2013-09-04 | Cambridge Display Tech Ltd | Method of fabricating a self-aligned top-gate organic transistor |
| US9076975B2 (en) | 2010-04-27 | 2015-07-07 | Xerox Corporation | Dielectric composition for thin-film transistors |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE353536T1 (de) * | 1997-02-20 | 2007-02-15 | Partnerships Ltd Inc | Niedertemperaturverfahren und zusammensetzungen zur herstellung elektischer leiter |
| EP0968537B1 (de) | 1997-08-22 | 2012-05-02 | Creator Technology B.V. | Feld-effekt-transistor, der im wesentlichen aus organischen materialien besteht |
| US6190831B1 (en) | 1998-09-29 | 2001-02-20 | Kodak Polychrome Graphics Llc | Processless direct write printing plate having heat sensitive positively-charged polymers and methods of imaging and printing |
| US6190830B1 (en) | 1998-09-29 | 2001-02-20 | Kodak Polychrome Graphics Llc | Processless direct write printing plate having heat sensitive crosslinked vinyl polymer with organoonium group and methods of imaging and printing |
| HK1054816B (zh) * | 1999-12-21 | 2006-09-29 | 弗莱克因艾伯勒有限公司 | 溶液加工 |
| EP1393389B1 (de) * | 2001-05-23 | 2018-12-05 | Flexenable Limited | Musterung von anordnungen mittels laser |
-
2004
- 2004-09-02 EP EP07075240A patent/EP2166543B1/de not_active Expired - Lifetime
- 2004-09-02 EP EP04768301A patent/EP1665290B1/de not_active Expired - Lifetime
- 2004-09-02 DE DE602004006283T patent/DE602004006283T2/de not_active Expired - Lifetime
- 2004-09-02 WO PCT/GB2004/003754 patent/WO2005022664A2/en not_active Ceased
- 2004-09-02 AT AT04768301T patent/ATE361532T1/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1665290B1 (de) | 2007-05-02 |
| EP2166543A1 (de) | 2010-03-24 |
| WO2005022664A3 (en) | 2005-08-25 |
| EP2166543B1 (de) | 2011-03-23 |
| DE602004006283D1 (de) | 2007-06-14 |
| EP1665290A2 (de) | 2006-06-07 |
| DE602004006283T2 (de) | 2007-12-27 |
| WO2005022664A2 (en) | 2005-03-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE361532T1 (de) | Herstellung elektronischer bauelemente | |
| ATE501863T1 (de) | Verfahren zur herstellung beschichteter paneele und beschichtetes paneel | |
| ATE354182T1 (de) | Organische elektronische schaltung mit stukturierter halbleitender funktionsschicht und herstellungsverfahren dazu | |
| DE602004009715D1 (de) | Elektrolumineszierende Vorrichtung und zugehörige Herstellungsmethode | |
| TW200727461A (en) | Semiconductor device and production method thereof | |
| SG169394A1 (en) | Method for producing partial soi structures comprising zones connecting a superficial layer and a substrate | |
| WO2005039868A3 (de) | Strukturierung von elektrischen funktionsschichten mittels einer transferfolie und strukturierung des klebers | |
| TW200725760A (en) | Thermally enhanced coreless thin substrate with an embedded chip and method for manufacturing the same | |
| DE602005017899D1 (de) | Widerstandsvariabler speicherbaustein und herstellungsverfahren | |
| ATE459986T1 (de) | Verfahren für die herstellung eigekapselten organischen elektronischen vorrichtungen | |
| ATE505813T1 (de) | Herstellung von luftspalten um eine verbindungsleitung herum | |
| JP2004342210A5 (de) | ||
| TW200623405A (en) | Methods of manufacturing an image device | |
| TW200721566A (en) | A method of fabricating organic electro-luminescent devices | |
| ATE526685T1 (de) | Mehrschichtiges halbleitersubstrat und darauf gebildeter bildsensor zur verbesserten infrarotempfindlichkeit | |
| TW200614331A (en) | Method of manufacturing semiconductor device and semiconductor device manufactured by using the same | |
| ATE492029T1 (de) | Strukturen für mikroelektronik und mikrosystem sowie herstellungsverfahren | |
| DE60322479D1 (de) | Halbleiter-Beschleunigungsaufnehmer mit dotierten Halbleiterschichten zur Verdrahtung | |
| TW200618162A (en) | Methods for fabricating semiconductor devices | |
| NO20045727D0 (no) | Fremgangsmate i fremstillingen av en elektronisk innretning | |
| TW200611385A (en) | Carried structure of integrated semiconductor element and method for fabricating the same | |
| DE602005010774D1 (de) | Thermokopf mit zwischen Kühlkörperplatte und Kopfsubstrat aufgetragenem Klebstof und Herstellungsverfahren dafür | |
| ATE547259T1 (de) | Sicherheitselement und verfahren zu seiner herstellung | |
| ATE527702T1 (de) | Mehrschichtige struktur mit einer phasenwechselmaterialschicht und verfahren zu ihrer herstellung | |
| TW200631673A (en) | Patterned substrate, electro-optical device, and method for manufacturing an electro-optical device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |