ATE397055T1 - Verfahren und gerät zum reinigen von halbleitersubstraten nach der politur deskupferfilms - Google Patents

Verfahren und gerät zum reinigen von halbleitersubstraten nach der politur deskupferfilms

Info

Publication number
ATE397055T1
ATE397055T1 AT99907149T AT99907149T ATE397055T1 AT E397055 T1 ATE397055 T1 AT E397055T1 AT 99907149 T AT99907149 T AT 99907149T AT 99907149 T AT99907149 T AT 99907149T AT E397055 T1 ATE397055 T1 AT E397055T1
Authority
AT
Austria
Prior art keywords
semiconductor substrates
polishing
cleaning
copper film
cleaning semiconductor
Prior art date
Application number
AT99907149T
Other languages
English (en)
Inventor
Xu Li
Yuexing Zhao
Diane Hymes
John Delarios
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE397055T1 publication Critical patent/ATE397055T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • C23G1/103—Other heavy metals copper or alloys of copper
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Detergent Compositions (AREA)
AT99907149T 1998-03-09 1999-02-18 Verfahren und gerät zum reinigen von halbleitersubstraten nach der politur deskupferfilms ATE397055T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/037,586 US6593282B1 (en) 1997-10-21 1998-03-09 Cleaning solutions for semiconductor substrates after polishing of copper film

Publications (1)

Publication Number Publication Date
ATE397055T1 true ATE397055T1 (de) 2008-06-15

Family

ID=21895143

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99907149T ATE397055T1 (de) 1998-03-09 1999-02-18 Verfahren und gerät zum reinigen von halbleitersubstraten nach der politur deskupferfilms

Country Status (11)

Country Link
US (1) US6593282B1 (de)
EP (1) EP1086191B1 (de)
JP (1) JP4270750B2 (de)
KR (1) KR100574607B1 (de)
CN (1) CN1250675C (de)
AT (1) ATE397055T1 (de)
AU (1) AU2687799A (de)
CA (1) CA2309583A1 (de)
DE (1) DE69938832D1 (de)
IL (1) IL136287A (de)
WO (1) WO1999046353A1 (de)

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US6436302B1 (en) 1999-08-23 2002-08-20 Applied Materials, Inc. Post CU CMP polishing for reduced defects
US6656842B2 (en) * 1999-09-22 2003-12-02 Applied Materials, Inc. Barrier layer buffing after Cu CMP
US6537381B1 (en) * 1999-09-29 2003-03-25 Lam Research Corporation Method for cleaning and treating a semiconductor wafer after chemical mechanical polishing
US6423200B1 (en) * 1999-09-30 2002-07-23 Lam Research Corporation Copper interconnect seed layer treatment methods and apparatuses for treating the same
JP3307375B2 (ja) 1999-10-04 2002-07-24 日本電気株式会社 半導体装置の製造方法
US6432826B1 (en) * 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
EP1189265A4 (de) * 2000-03-17 2007-04-25 Shinetsu Handotai Kk Wasser für die aufbewahrung von siliziumscheiben und aufbewahrungsmethode
US6436832B1 (en) 2000-05-23 2002-08-20 Applied Materials, Inc Method to reduce polish initiation time in a polish process
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US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
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CN1198331C (zh) 2001-12-27 2005-04-20 松下电器产业株式会社 布线结构的形成方法
JP4221191B2 (ja) * 2002-05-16 2009-02-12 関東化学株式会社 Ｃｍｐ後洗浄液組成物
KR20040036754A (ko) * 2002-10-24 2004-05-03 주식회사 하이닉스반도체 화학적기계연마 공정에서의 세정 단계
US7390429B2 (en) 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
US20050112292A1 (en) * 2003-11-25 2005-05-26 Parker Russell A. Methods for treating at least one member of a microarray structure and methods of using the same
US7210988B2 (en) * 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
WO2007045267A1 (en) * 2005-10-19 2007-04-26 Freescale Semiconductor, Inc. A system and method for cleaning a conditioning device
TW200720493A (en) * 2005-10-31 2007-06-01 Applied Materials Inc Electrochemical method for ecmp polishing pad conditioning
WO2007054125A1 (en) * 2005-11-08 2007-05-18 Freescale Semiconductor, Inc. A system and method for removing particles from a polishing pad
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US20070232511A1 (en) * 2006-03-28 2007-10-04 Matthew Fisher Cleaning solutions including preservative compounds for post CMP cleaning processes
US20070227902A1 (en) * 2006-03-29 2007-10-04 Applied Materials, Inc. Removal profile tuning by adjusting conditioning sweep profile on a conductive pad
US7947637B2 (en) * 2006-06-30 2011-05-24 Fujifilm Electronic Materials, U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US9028620B2 (en) * 2010-03-05 2015-05-12 AWBSCQEMGK, Inc. Substrate clean solution for copper contamination removal
US8662963B2 (en) * 2011-05-12 2014-03-04 Nanya Technology Corp. Chemical mechanical polishing system
CN104637798B (zh) * 2013-11-13 2018-07-24 中芯国际集成电路制造(北京)有限公司 金属栅极cmp工艺及半导体器件的制造方法
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Also Published As

Publication number Publication date
JP2002506295A (ja) 2002-02-26
WO1999046353A1 (en) 1999-09-16
IL136287A (en) 2006-10-05
EP1086191A1 (de) 2001-03-28
IL136287A0 (en) 2001-05-20
AU2687799A (en) 1999-09-27
CN1304439A (zh) 2001-07-18
KR100574607B1 (ko) 2006-04-28
US6593282B1 (en) 2003-07-15
DE69938832D1 (de) 2008-07-10
KR20010032349A (ko) 2001-04-16
EP1086191A4 (de) 2004-11-10
JP4270750B2 (ja) 2009-06-03
CN1250675C (zh) 2006-04-12
CA2309583A1 (en) 1999-09-16
EP1086191B1 (de) 2008-05-28

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