ATE397779T1 - Referenzstromgenerator und verfahren zum programmieren, einstellen und/oder betreiben des generators - Google Patents
Referenzstromgenerator und verfahren zum programmieren, einstellen und/oder betreiben des generatorsInfo
- Publication number
- ATE397779T1 ATE397779T1 AT04751987T AT04751987T ATE397779T1 AT E397779 T1 ATE397779 T1 AT E397779T1 AT 04751987 T AT04751987 T AT 04751987T AT 04751987 T AT04751987 T AT 04751987T AT E397779 T1 ATE397779 T1 AT E397779T1
- Authority
- AT
- Austria
- Prior art keywords
- generator
- reference current
- programming
- adjusting
- operating
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12005—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5006—Current
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/4016—Memory devices with silicon-on-insulator cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Credit Cards Or The Like (AREA)
- Stored Programmes (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US47046203P | 2003-05-13 | 2003-05-13 | |
| US47027603P | 2003-05-14 | 2003-05-14 | |
| US10/840,902 US6912150B2 (en) | 2003-05-13 | 2004-05-07 | Reference current generator, and method of programming, adjusting and/or operating same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE397779T1 true ATE397779T1 (de) | 2008-06-15 |
Family
ID=33425219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04751987T ATE397779T1 (de) | 2003-05-13 | 2004-05-12 | Referenzstromgenerator und verfahren zum programmieren, einstellen und/oder betreiben des generators |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6912150B2 (de) |
| EP (1) | EP1620859B1 (de) |
| AT (1) | ATE397779T1 (de) |
| DE (1) | DE602004014269D1 (de) |
| WO (1) | WO2004102631A2 (de) |
Families Citing this family (91)
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| JP4195427B2 (ja) * | 2004-08-31 | 2008-12-10 | 株式会社東芝 | 半導体記憶装置 |
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- 2004-05-07 US US10/840,902 patent/US6912150B2/en not_active Expired - Lifetime
- 2004-05-12 EP EP04751987A patent/EP1620859B1/de not_active Expired - Lifetime
- 2004-05-12 WO PCT/US2004/014843 patent/WO2004102631A2/en not_active Ceased
- 2004-05-12 AT AT04751987T patent/ATE397779T1/de not_active IP Right Cessation
- 2004-05-12 DE DE602004014269T patent/DE602004014269D1/de not_active Expired - Lifetime
-
2005
- 2005-02-18 US US11/061,069 patent/US6980461B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1620859B1 (de) | 2008-06-04 |
| WO2004102631A3 (en) | 2005-03-31 |
| US20050162931A1 (en) | 2005-07-28 |
| EP1620859A4 (de) | 2007-02-21 |
| US6912150B2 (en) | 2005-06-28 |
| US6980461B2 (en) | 2005-12-27 |
| WO2004102631A2 (en) | 2004-11-25 |
| DE602004014269D1 (de) | 2008-07-17 |
| EP1620859A2 (de) | 2004-11-25 |
| US20040227166A1 (en) | 2004-11-18 |
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| Date | Code | Title | Description |
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| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |