ATE409356T1 - Verfahren zur herstellung eines halbleiterbauelements - Google Patents

Verfahren zur herstellung eines halbleiterbauelements

Info

Publication number
ATE409356T1
ATE409356T1 AT99904164T AT99904164T ATE409356T1 AT E409356 T1 ATE409356 T1 AT E409356T1 AT 99904164 T AT99904164 T AT 99904164T AT 99904164 T AT99904164 T AT 99904164T AT E409356 T1 ATE409356 T1 AT E409356T1
Authority
AT
Austria
Prior art keywords
steps
oxidation
oxide layer
defect
substrate
Prior art date
Application number
AT99904164T
Other languages
English (en)
Inventor
Randhir Thakur
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE409356T1 publication Critical patent/ATE409356T1/de

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01346—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation through a layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H10P70/125—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0128—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising multiple local oxidation process steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments

Landscapes

  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Glass Compositions (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
AT99904164T 1998-02-02 1999-01-21 Verfahren zur herstellung eines halbleiterbauelements ATE409356T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/017,453 US6475927B1 (en) 1998-02-02 1998-02-02 Method of forming a semiconductor device

Publications (1)

Publication Number Publication Date
ATE409356T1 true ATE409356T1 (de) 2008-10-15

Family

ID=21782671

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99904164T ATE409356T1 (de) 1998-02-02 1999-01-21 Verfahren zur herstellung eines halbleiterbauelements

Country Status (8)

Country Link
US (5) US6475927B1 (de)
EP (1) EP1051744B1 (de)
JP (1) JP3360300B2 (de)
KR (1) KR100415523B1 (de)
AT (1) ATE409356T1 (de)
AU (1) AU2462199A (de)
DE (1) DE69939620D1 (de)
WO (1) WO1999039384A1 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4493796B2 (ja) * 2000-03-30 2010-06-30 東京エレクトロン株式会社 誘電体膜の形成方法
JP3941099B2 (ja) * 2001-12-19 2007-07-04 ソニー株式会社 薄膜形成方法
US6821904B2 (en) * 2002-07-30 2004-11-23 Chartered Semiconductor Manufacturing Ltd. Method of blocking nitrogen from thick gate oxide during dual gate CMP
US6893920B2 (en) * 2002-09-12 2005-05-17 Promos Technologies, Inc. Method for forming a protective buffer layer for high temperature oxide processing
JP3946130B2 (ja) * 2002-11-20 2007-07-18 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US6933235B2 (en) * 2002-11-21 2005-08-23 The Regents Of The University Of North Texas Method for removing contaminants on a substrate
US6916744B2 (en) * 2002-12-19 2005-07-12 Applied Materials, Inc. Method and apparatus for planarization of a material by growing a sacrificial film with customized thickness profile
KR101058882B1 (ko) * 2003-02-04 2011-08-23 어플라이드 머티어리얼스, 인코포레이티드 초-저압에서 암모니아를 이용한 급속 열 어닐링을 통한 실리콘 옥시질화물의 질소 프로파일 테일러링
US7279003B2 (en) * 2003-04-24 2007-10-09 Medtronic Vascular, Inc. Stent graft tapered spring
US7033961B1 (en) * 2003-07-15 2006-04-25 Rf Micro Devices, Inc. Epitaxy/substrate release layer
CN1842900A (zh) * 2003-07-31 2006-10-04 Fsi国际公司 非常均匀的氧化物层、尤其是超薄层的受控生长
US20050048742A1 (en) * 2003-08-26 2005-03-03 Tokyo Electron Limited Multiple grow-etch cyclic surface treatment for substrate preparation
DE102004015307A1 (de) * 2004-03-29 2005-10-20 Infineon Technologies Ag Verfahren zur Präparation der Oberfläche eines Halbleiterkörpers
US20070090493A1 (en) * 2005-10-11 2007-04-26 Promos Technologies Inc. Fabrication of nitrogen containing regions on silicon containing regions in integrated circuits, and integrated circuits obtained thereby
JP5091452B2 (ja) * 2006-10-06 2012-12-05 株式会社東芝 半導体装置の製造方法
KR100757327B1 (ko) * 2006-10-16 2007-09-11 삼성전자주식회사 불 휘발성 메모리 소자의 형성 방법
US8614124B2 (en) * 2007-05-25 2013-12-24 Cypress Semiconductor Corporation SONOS ONO stack scaling
US8387674B2 (en) 2007-11-30 2013-03-05 Taiwan Semiconductor Manufacturing Comany, Ltd. Chip on wafer bonder
CN101625974B (zh) * 2008-07-08 2011-10-05 中芯国际集成电路制造(上海)有限公司 采用高能电磁辐射的快速热处理半导体衬底形成介电层的方法
US8507310B2 (en) * 2008-12-04 2013-08-13 Mitsubishi Electric Corporation Method for manufacturing thin-film photoelectric conversion device
US7910467B2 (en) * 2009-01-16 2011-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for treating layers of a gate stack
CN103098177A (zh) * 2010-08-04 2013-05-08 应用材料公司 从衬底表面去除污染物与原生氧化物的方法
US9093420B2 (en) 2012-04-18 2015-07-28 Rf Micro Devices, Inc. Methods for fabricating high voltage field effect transistor finger terminations
US9124221B2 (en) 2012-07-16 2015-09-01 Rf Micro Devices, Inc. Wide bandwidth radio frequency amplier having dual gate transistors
US9202874B2 (en) 2012-08-24 2015-12-01 Rf Micro Devices, Inc. Gallium nitride (GaN) device with leakage current-based over-voltage protection
US8988097B2 (en) 2012-08-24 2015-03-24 Rf Micro Devices, Inc. Method for on-wafer high voltage testing of semiconductor devices
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
US9142620B2 (en) 2012-08-24 2015-09-22 Rf Micro Devices, Inc. Power device packaging having backmetals couple the plurality of bond pads to the die backside
US9070761B2 (en) 2012-08-27 2015-06-30 Rf Micro Devices, Inc. Field effect transistor (FET) having fingers with rippled edges
US9129802B2 (en) 2012-08-27 2015-09-08 Rf Micro Devices, Inc. Lateral semiconductor device with vertical breakdown region
US9325281B2 (en) 2012-10-30 2016-04-26 Rf Micro Devices, Inc. Power amplifier controller
US9455327B2 (en) 2014-06-06 2016-09-27 Qorvo Us, Inc. Schottky gated transistor with interfacial layer
CN105336595A (zh) * 2014-08-08 2016-02-17 上海格易电子有限公司 一种隧穿氧化层的制造方法和具有该隧穿氧化层的快闪存储器
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
KR102409748B1 (ko) 2015-07-28 2022-06-17 삼성전자주식회사 반도체 장치 및 그 제조 방법
US12471367B2 (en) * 2019-03-04 2025-11-11 Board Of Regents, The University Of Texas System Systems and techniques for forming silicon-on-oxide-on-silicon structures

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4271421A (en) * 1977-01-26 1981-06-02 Texas Instruments Incorporated High density N-channel silicon gate read only memory
JPS5928369A (ja) 1982-08-10 1984-02-15 Nec Corp 半導体装置用キヤパシタの製造方法
US4567645A (en) * 1983-09-16 1986-02-04 International Business Machines Corporation Method for forming a buried subcollector in a semiconductor substrate by ion implantation
JPH01319944A (ja) 1988-06-21 1989-12-26 Mitsubishi Electric Corp 半導体基板表面に薄膜を形成する方法およびその装置
US5178682A (en) * 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
JPH069195B2 (ja) 1989-05-06 1994-02-02 大日本スクリーン製造株式会社 基板の表面処理方法
US5022961B1 (en) 1989-07-26 1997-05-27 Dainippon Screen Mfg Method for removing a film on a silicon layer surface
US5268314A (en) * 1990-01-16 1993-12-07 Philips Electronics North America Corp. Method of forming a self-aligned bipolar transistor
US5786788A (en) * 1996-10-08 1998-07-28 Raytheon Company Radar system and method for reducing range sidelobes
US5229334A (en) * 1990-08-24 1993-07-20 Seiko Epson Corporation Method of forming a gate insulating film involving a step of cleaning using an ammonia-peroxide solution
US5326406A (en) 1991-07-31 1994-07-05 Kawasaki Steel Corporation Method of cleaning semiconductor substrate and apparatus for carrying out the same
US5188979A (en) 1991-08-26 1993-02-23 Motorola Inc. Method for forming a nitride layer using preheated ammonia
US5306672A (en) * 1991-10-17 1994-04-26 Nec Corporation Method of manufacturing a semiconductor device wherein natural oxide film is removed from the surface of silicon substrate with HF gas
JPH05267684A (ja) 1992-03-18 1993-10-15 Rohm Co Ltd 不揮発性記憶素子
US5316981A (en) * 1992-10-09 1994-05-31 Advanced Micro Devices, Inc. Method for achieving a high quality thin oxide using a sacrificial oxide anneal
US5589422A (en) * 1993-01-15 1996-12-31 Intel Corporation Controlled, gas phase process for removal of trace metal contamination and for removal of a semiconductor layer
US5344365A (en) 1993-09-14 1994-09-06 Sematech, Inc. Integrated building and conveying structure for manufacturing under ultraclean conditions
JPH0786271A (ja) 1993-09-17 1995-03-31 Fujitsu Ltd シリコン酸化膜の作製方法
US5403434A (en) * 1994-01-06 1995-04-04 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafer
JPH07240473A (ja) 1994-03-01 1995-09-12 Fujitsu Ltd 半導体記憶装置およびその製造方法
JPH07335641A (ja) * 1994-06-03 1995-12-22 Sony Corp シリコン酸化膜の形成方法及び半導体装置の酸化膜
US5613821A (en) 1995-07-06 1997-03-25 Brooks Automation, Inc. Cluster tool batchloader of substrate carrier
AU7264596A (en) * 1995-10-13 1997-04-30 Ontrak Systems, Inc. Method and apparatus for chemical delivery through the brush
US5783495A (en) * 1995-11-13 1998-07-21 Micron Technology, Inc. Method of wafer cleaning, and system and cleaning solution regarding same
US5811334A (en) * 1995-12-29 1998-09-22 Advanced Micro Devices, Inc. Wafer cleaning procedure useful in the manufacture of a non-volatile memory device
US6156121A (en) 1996-12-19 2000-12-05 Tokyo Electron Limited Wafer boat and film formation method
US5851888A (en) * 1997-01-15 1998-12-22 Advanced Micro Devices, Inc. Controlled oxide growth and highly selective etchback technique for forming ultra-thin oxide
US5876788A (en) 1997-01-16 1999-03-02 International Business Machines Corporation High dielectric TiO2 -SiN composite films for memory applications
US6240933B1 (en) * 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
US6265286B1 (en) * 1997-11-17 2001-07-24 Texas Instruments Incorporated Planarization of LOCOS through recessed reoxidation techniques
JP2001319944A (ja) 2000-05-01 2001-11-16 Sony Corp ワイヤボンディング装置及びその制御方法
JP2005267684A (ja) 2004-03-16 2005-09-29 Sony Corp 磁気ヘッド装置

Also Published As

Publication number Publication date
EP1051744A1 (de) 2000-11-15
AU2462199A (en) 1999-08-16
KR20010040515A (ko) 2001-05-15
US20070087506A1 (en) 2007-04-19
US6589877B1 (en) 2003-07-08
US6475927B1 (en) 2002-11-05
KR100415523B1 (ko) 2004-01-16
US20020119674A1 (en) 2002-08-29
JP3360300B2 (ja) 2002-12-24
WO1999039384A1 (en) 1999-08-05
DE69939620D1 (de) 2008-11-06
JP2002502126A (ja) 2002-01-22
US7135417B2 (en) 2006-11-14
US20070087505A1 (en) 2007-04-19
EP1051744B1 (de) 2008-09-24

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