ATE418420T1 - Verfahren zum polieren der oberfläche eines substrats - Google Patents

Verfahren zum polieren der oberfläche eines substrats

Info

Publication number
ATE418420T1
ATE418420T1 AT02803675T AT02803675T ATE418420T1 AT E418420 T1 ATE418420 T1 AT E418420T1 AT 02803675 T AT02803675 T AT 02803675T AT 02803675 T AT02803675 T AT 02803675T AT E418420 T1 ATE418420 T1 AT E418420T1
Authority
AT
Austria
Prior art keywords
substrate
polishing
cmp
improved
cmp process
Prior art date
Application number
AT02803675T
Other languages
English (en)
Inventor
Leo Schowalter
Carlos Rojo
Lopez Javier Martinez
Kenneth Morgan
Original Assignee
Rensselaer Polytech Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rensselaer Polytech Inst filed Critical Rensselaer Polytech Inst
Application granted granted Critical
Publication of ATE418420T1 publication Critical patent/ATE418420T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT02803675T 2001-11-20 2002-11-20 Verfahren zum polieren der oberfläche eines substrats ATE418420T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US33186801P 2001-11-20 2001-11-20

Publications (1)

Publication Number Publication Date
ATE418420T1 true ATE418420T1 (de) 2009-01-15

Family

ID=23295726

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02803675T ATE418420T1 (de) 2001-11-20 2002-11-20 Verfahren zum polieren der oberfläche eines substrats

Country Status (8)

Country Link
US (2) US7037838B2 (de)
EP (1) EP1446263B1 (de)
JP (2) JP2005510072A (de)
AT (1) ATE418420T1 (de)
AU (1) AU2002365979A1 (de)
CA (1) CA2467806C (de)
DE (1) DE60230538D1 (de)
WO (1) WO2003043780A2 (de)

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JP4792802B2 (ja) * 2005-04-26 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の表面処理方法
EP1885918B1 (de) * 2005-05-11 2017-01-25 North Carolina State University Herstellungsverfahren für gruppe-iii-nitrid-filme
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
US7670902B2 (en) * 2005-07-26 2010-03-02 Semiconductor Manufacturing International (Shanghai) Corporation Method and structure for landing polysilicon contact
RU2320466C2 (ru) * 2005-11-23 2008-03-27 Ооо "Нитридные Кристаллы" Способ полирования поверхности подложки
US8349077B2 (en) 2005-11-28 2013-01-08 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
US7641735B2 (en) * 2005-12-02 2010-01-05 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
CN101454487B (zh) * 2006-03-30 2013-01-23 晶体公司 氮化铝块状晶体的可控掺杂方法
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
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WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
JP5730484B2 (ja) * 2007-01-26 2015-06-10 クリスタル アイエス インコーポレイテッド 厚みのある擬似格子整合型の窒化物エピタキシャル層
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US8210904B2 (en) * 2008-04-29 2012-07-03 International Business Machines Corporation Slurryless mechanical planarization for substrate reclamation
US7915178B2 (en) 2008-07-30 2011-03-29 North Carolina State University Passivation of aluminum nitride substrates
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EP2595940B1 (de) 2010-07-20 2019-11-13 Hexatech Inc. Polykristalliner aluminiumnitridkugel und verfahren zur herstellung eines polykristallinen aluminiumnitridmaterials
US9299594B2 (en) 2010-07-27 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate bonding system and method of modifying the same
JP5319628B2 (ja) * 2010-08-26 2013-10-16 シャープ株式会社 窒化物半導体素子および半導体光学装置
JP2011049610A (ja) * 2010-12-10 2011-03-10 Sumitomo Electric Ind Ltd ＡｌＮ結晶の表面処理方法、ＡｌＮ結晶基板、エピタキシャル層付ＡｌＮ結晶基板および半導体デバイス
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US9299880B2 (en) 2013-03-15 2016-03-29 Crystal Is, Inc. Pseudomorphic electronic and optoelectronic devices having planar contacts
JP6615765B2 (ja) * 2014-09-11 2019-12-04 株式会社トクヤマ 窒化アルミニウム単結晶基板の洗浄方法および高分子化合物材料
CN106536793B (zh) 2015-02-02 2019-04-05 富士电机株式会社 碳化硅半导体装置的制造方法以及碳化硅半导体装置
US10249786B2 (en) 2016-11-29 2019-04-02 Palo Alto Research Center Incorporated Thin film and substrate-removed group III-nitride based devices and method
US10550493B2 (en) 2017-11-10 2020-02-04 Crystal Is, Inc. Thermal control for formation and processing of aluminum nitride
US20210047749A1 (en) 2019-08-15 2021-02-18 Robert T. Bondokov Diameter expansion of aluminum nitride crystals during growth by physical vapor transport
JP2021104547A (ja) * 2019-12-26 2021-07-26 ニッタ・デュポン株式会社 研磨スラリー
US20230287242A1 (en) * 2020-07-29 2023-09-14 Versum Materials Us, Llc Pad-in-a-bottle (pib) technology for copper and through-silicon via (tsv) chemical-mechanical planarization (cmp)
US20240293912A1 (en) * 2021-06-30 2024-09-05 Kyocera Corporation Manufacturing method for manufacturing substrate of nitride crystal of group 13 element in periodic table
EP4373897A4 (de) * 2021-07-23 2025-05-14 Versum Materials US, LLC Pad-in-a-flaschen (pib)-technologie für kupferbarriereschlämme
US20240425723A1 (en) * 2021-11-10 2024-12-26 Versum Materials Us, Llc Pad-in-a-bottle chemical mechanical planarization polishing with cost-effective non-porous solid polishing pads

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US5962343A (en) * 1996-07-30 1999-10-05 Nissan Chemical Industries, Ltd. Process for producing crystalline ceric oxide particles and abrasive
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KR100574259B1 (ko) * 1999-03-31 2006-04-27 가부시끼가이샤 도꾸야마 연마제 및 연마 방법
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Also Published As

Publication number Publication date
HK1068840A1 (en) 2005-05-06
US20070289946A1 (en) 2007-12-20
JP2012134515A (ja) 2012-07-12
CA2467806A1 (en) 2003-05-30
WO2003043780A3 (en) 2003-08-28
JP2005510072A (ja) 2005-04-14
EP1446263A2 (de) 2004-08-18
US7323414B2 (en) 2008-01-29
EP1446263B1 (de) 2008-12-24
WO2003043780B1 (en) 2003-10-30
CA2467806C (en) 2011-04-19
AU2002365979A8 (en) 2003-06-10
US7037838B2 (en) 2006-05-02
WO2003043780A2 (en) 2003-05-30
DE60230538D1 (de) 2009-02-05
AU2002365979A1 (en) 2003-06-10
US20040033690A1 (en) 2004-02-19
JP5628224B2 (ja) 2014-11-19

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