ATE510795T1 - Verfahren zur herstellung eines elektromechanischen mems-bauteils in einem einkristallinen material - Google Patents

Verfahren zur herstellung eines elektromechanischen mems-bauteils in einem einkristallinen material

Info

Publication number
ATE510795T1
ATE510795T1 AT09290471T AT09290471T ATE510795T1 AT E510795 T1 ATE510795 T1 AT E510795T1 AT 09290471 T AT09290471 T AT 09290471T AT 09290471 T AT09290471 T AT 09290471T AT E510795 T1 ATE510795 T1 AT E510795T1
Authority
AT
Austria
Prior art keywords
layer
producing
crystalline material
single crystalline
mems component
Prior art date
Application number
AT09290471T
Other languages
English (en)
Inventor
Francois Perruchot
Bernard Diem
Vincent Larrey
Laurent Clavelier
Emmanuel Defay
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE510795T1 publication Critical patent/ATE510795T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/005—Bulk micromachining
    • B81C1/00507—Formation of buried layers by techniques other than deposition, e.g. by deep implantation of elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H9/2436—Disk resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0115—Porous silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/0136—Controlling etch progression by doping limited material regions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • B81C2201/0177—Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0136—Growing or depositing of a covering layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0145—Hermetically sealing an opening in the lid
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
AT09290471T 2008-06-23 2009-06-22 Verfahren zur herstellung eines elektromechanischen mems-bauteils in einem einkristallinen material ATE510795T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0803494A FR2932788A1 (fr) 2008-06-23 2008-06-23 Procede de fabrication d'un composant electromecanique mems / nems.

Publications (1)

Publication Number Publication Date
ATE510795T1 true ATE510795T1 (de) 2011-06-15

Family

ID=40436420

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09290471T ATE510795T1 (de) 2008-06-23 2009-06-22 Verfahren zur herstellung eines elektromechanischen mems-bauteils in einem einkristallinen material

Country Status (5)

Country Link
US (1) US7906439B2 (de)
EP (1) EP2138451B1 (de)
JP (1) JP2010012594A (de)
AT (1) ATE510795T1 (de)
FR (1) FR2932788A1 (de)

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FR2932923B1 (fr) * 2008-06-23 2011-03-25 Commissariat Energie Atomique Substrat heterogene comportant une couche sacrificielle et son procede de realisation.
WO2010111601A2 (en) * 2009-03-26 2010-09-30 Semprius, Inc. Methods of forming printable integrated circuit devices and devices formed thereby
JP2011189423A (ja) * 2010-03-12 2011-09-29 Seiko Epson Corp Ｍｅｍｓ素子および発振器
US8030202B1 (en) * 2010-12-10 2011-10-04 International Business Machines Corporation Temporary etchable liner for forming air gap
FR2983189B1 (fr) * 2011-11-30 2014-02-07 Commissariat Energie Atomique Procede de realisation d'une structure comportant au moins une partie active presentant des zones d'epaisseurs differentes
FR2983188B1 (fr) * 2011-11-30 2016-07-01 Commissariat Energie Atomique Procede de realisation d'une structure comportant au moins une partie active multiepaisseur
US8987835B2 (en) 2012-03-27 2015-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with a buried semiconductor material between two fins
FR3002219B1 (fr) * 2013-02-19 2015-04-10 Commissariat Energie Atomique Procede de fabrication d'une structure micromecanique et/ou nanomecanique comportant une surface poreuse
WO2014206737A1 (en) * 2013-06-27 2014-12-31 Soitec Methods of fabricating semiconductor structures including cavities filled with a sacrifical material
US9805966B2 (en) * 2014-07-25 2017-10-31 Akoustis, Inc. Wafer scale packaging
US9912314B2 (en) * 2014-07-25 2018-03-06 Akoustics, Inc. Single crystal acoustic resonator and bulk acoustic wave filter
WO2016092747A1 (en) * 2014-12-09 2016-06-16 Seiko Epson Corporation Piezoelectric device, liquid ejecting head, manufacturing method of piezoelectric device, and manufacturing method of liquid ejecting head
DE102015224481A1 (de) * 2015-12-08 2017-06-08 Robert Bosch Gmbh Laser-Reseal mit verschiedenen Kappenmaterialien
DE102017216904A1 (de) * 2017-09-25 2019-03-28 Robert Bosch Gmbh Verfahren zur Herstellung dünner MEMS-Wafer
FR3093511B1 (fr) * 2019-03-05 2022-08-05 Commissariat Energie Atomique Procédé de réalisation d’un système micro-électro-mécanique réalisé à partir d’une couche piézoélectrique ou ferroélectrique reportée
CN112039457B (zh) * 2019-07-19 2025-04-04 中芯集成电路（宁波）有限公司上海分公司 薄膜体声波谐振器的制作方法
DE102020214792A1 (de) 2020-11-25 2022-05-25 Robert Bosch Gesellschaft mit beschränkter Haftung Mikromechanisches Bauelement
US11463070B2 (en) 2022-01-18 2022-10-04 Shenzhen Newsonic Technologies Co., Ltd. FBAR structure and manufacturing method of same
CN114094970B (zh) * 2022-01-20 2022-05-17 深圳新声半导体有限公司 用于制作薄膜体声波谐振器的方法及谐振器
CN115513365B (zh) * 2022-09-16 2025-10-21 武汉大学 一种基于fbar的压力传感器及其制备方法
TWI868920B (zh) * 2023-09-13 2025-01-01 台亞半導體股份有限公司 多孔矽結構製造方法

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FR2875947B1 (fr) 2004-09-30 2007-09-07 Tracit Technologies Nouvelle structure pour microelectronique et microsysteme et procede de realisation
FR2876220B1 (fr) 2004-10-06 2007-09-28 Commissariat Energie Atomique Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees.
FR2876219B1 (fr) 2004-10-06 2006-11-24 Commissariat Energie Atomique Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees.
US7352949B2 (en) * 2004-11-24 2008-04-01 National Sun Yat-Sen University Fiber used in wideband amplified spontaneous emission light source and the method of making the same
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FR2906238B1 (fr) * 2006-09-27 2008-12-19 Commissariat Energie Atomique Procede de realisation d'un composant electromecanique sur un substrat plan
US7671515B2 (en) * 2006-11-07 2010-03-02 Robert Bosch, Gmbh Microelectromechanical devices and fabrication methods
FR2932923B1 (fr) * 2008-06-23 2011-03-25 Commissariat Energie Atomique Substrat heterogene comportant une couche sacrificielle et son procede de realisation.

Also Published As

Publication number Publication date
EP2138451A1 (de) 2009-12-30
EP2138451B1 (de) 2011-05-25
US7906439B2 (en) 2011-03-15
US20100029031A1 (en) 2010-02-04
JP2010012594A (ja) 2010-01-21
FR2932788A1 (fr) 2009-12-25

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