ATE528793T1 - Verfahren zur herstellung eines films - Google Patents

Verfahren zur herstellung eines films

Info

Publication number
ATE528793T1
ATE528793T1 AT06809161T AT06809161T ATE528793T1 AT E528793 T1 ATE528793 T1 AT E528793T1 AT 06809161 T AT06809161 T AT 06809161T AT 06809161 T AT06809161 T AT 06809161T AT E528793 T1 ATE528793 T1 AT E528793T1
Authority
AT
Austria
Prior art keywords
wafer
face
implanted
film
predefined
Prior art date
Application number
AT06809161T
Other languages
English (en)
Inventor
Cecile Aulnette
Ian Cayrefourcq
Carlos Mazure
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Priority claimed from PCT/IB2006/003071 external-priority patent/WO2007017763A2/en
Application granted granted Critical
Publication of ATE528793T1 publication Critical patent/ATE528793T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Micromachines (AREA)
AT06809161T 2005-07-08 2006-07-06 Verfahren zur herstellung eines films ATE528793T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0507300A FR2888400B1 (fr) 2005-07-08 2005-07-08 Procede de prelevement de couche
US11/221,045 US7572714B2 (en) 2005-07-08 2005-09-06 Film taking-off method
PCT/IB2006/003071 WO2007017763A2 (en) 2005-07-08 2006-07-06 Method of production of a film

Publications (1)

Publication Number Publication Date
ATE528793T1 true ATE528793T1 (de) 2011-10-15

Family

ID=36127344

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06809161T ATE528793T1 (de) 2005-07-08 2006-07-06 Verfahren zur herstellung eines films

Country Status (6)

Country Link
US (1) US7572714B2 (de)
JP (1) JP4943426B2 (de)
CN (1) CN101213651A (de)
AT (1) ATE528793T1 (de)
FR (1) FR2888400B1 (de)
TW (1) TWI311776B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119156689A (zh) * 2022-05-18 2024-12-17 原子能与替代能源委员会 用于将层从源基体转移到目标基体的方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2880184B1 (fr) * 2004-12-28 2007-03-30 Commissariat Energie Atomique Procede de detourage d'une structure obtenue par assemblage de deux plaques
KR100731055B1 (ko) * 2005-11-08 2007-06-22 동부일렉트로닉스 주식회사 반도체소자의 제조방법
FR2893446B1 (fr) * 2005-11-16 2008-02-15 Soitec Silicon Insulator Techn TRAITEMENT DE COUCHE DE SiGe POUR GRAVURE SELECTIVE
FR2917232B1 (fr) 2007-06-06 2009-10-09 Soitec Silicon On Insulator Procede de fabrication d'une structure pour epitaxie sans zone d'exclusion.
EP2015354A1 (de) * 2007-07-11 2009-01-14 S.O.I.Tec Silicon on Insulator Technologies Verfahren zum Recycling eines Substrats, Herstellungsverfahren für einen beschichteten Wafer und dazu passendes recyceltes Donorsubstrat
WO2009007003A1 (en) * 2007-07-11 2009-01-15 S.O.I. Tec Silicon On Insulator Technologies Method for recycling a substrate, laminated water fabricating method and suitable recycled donor substrate
FR2947098A1 (fr) * 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
EP2461359B1 (de) * 2009-07-10 2017-02-08 Shanghai Simgui Technology Co., Ltd Verfahren zur formung eines substrats mit versenkter isolationsschicht
FR2953988B1 (fr) * 2009-12-11 2012-02-10 S O I Tec Silicon On Insulator Tech Procede de detourage d'un substrat chanfreine.
PL2928700T3 (pl) 2012-12-07 2019-02-28 Aixtron Se Sposób i aparatura do przenoszenia powłok z jednego substratu na inny
US20180033609A1 (en) * 2016-07-28 2018-02-01 QMAT, Inc. Removal of non-cleaved/non-transferred material from donor substrate
FR3063176A1 (fr) * 2017-02-17 2018-08-24 Soitec Masquage d'une zone au bord d'un substrat donneur lors d'une etape d'implantation ionique
TWI665718B (zh) * 2018-04-03 2019-07-11 環球晶圓股份有限公司 磊晶基板
US11043378B2 (en) * 2018-11-13 2021-06-22 Tokyo Electron Limited Systems and methods for inhibiting detectivity, metal particle contamination, and film growth on wafers
FR3091620B1 (fr) * 2019-01-07 2021-01-29 Commissariat Energie Atomique Procédé de transfert de couche avec réduction localisée d’une capacité à initier une fracture
CN111834200A (zh) * 2020-09-16 2020-10-27 南京晶驱集成电路有限公司 一种半导体结构及其制造方法
FR3135820B1 (fr) * 2022-05-18 2024-04-26 Commissariat Energie Atomique Procédé de transfert d'une couche depuis un substrat source vers un substrat destination

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DE3410524A1 (de) 1984-03-22 1985-10-03 Vdo Schindling Druckschalter
CA2246087A1 (en) * 1998-08-28 2000-02-28 Northern Telecom Limited Method of cleaving a semiconductor wafer
JP3943782B2 (ja) * 1999-11-29 2007-07-11 信越半導体株式会社 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ
JP4846915B2 (ja) * 2000-03-29 2011-12-28 信越半導体株式会社 貼り合わせウェーハの製造方法
JP2002075917A (ja) 2000-08-25 2002-03-15 Canon Inc 試料の分離装置及び分離方法
FR2823596B1 (fr) * 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
JP2002313757A (ja) * 2001-04-17 2002-10-25 Hitachi Ltd 半導体集積回路装置の製造方法
US6855436B2 (en) * 2003-05-30 2005-02-15 International Business Machines Corporation Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
JP2002353081A (ja) 2001-05-25 2002-12-06 Canon Inc 板部材の分離装置及び分離方法
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
FR2842349B1 (fr) 2002-07-09 2005-02-18 Transfert d'une couche mince a partir d'une plaquette comprenant une couche tampon
US7018910B2 (en) 2002-07-09 2006-03-28 S.O.I.Tec Silicon On Insulator Technologies S.A. Transfer of a thin layer from a wafer comprising a buffer layer
US6841457B2 (en) * 2002-07-16 2005-01-11 International Business Machines Corporation Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion
FR2842651B1 (fr) * 2002-07-17 2005-07-08 Procede de lissage du contour d'une couche utile de materiau reportee sur un substrat support
JP4147578B2 (ja) * 2002-07-30 2008-09-10 信越半導体株式会社 Ｓｏｉウエーハの製造方法
WO2004021420A2 (en) * 2002-08-29 2004-03-11 Massachusetts Institute Of Technology Fabrication method for a monocrystalline semiconductor layer on a substrate
FR2852445B1 (fr) 2003-03-14 2005-05-20 Soitec Silicon On Insulator Procede de realisation de substrats ou composants sur substrats avec transfert de couche utile, pour la microelectronique, l'optoelectronique ou l'optique
US7122095B2 (en) * 2003-03-14 2006-10-17 S.O.I.Tec Silicon On Insulator Technologies S.A. Methods for forming an assembly for transfer of a useful layer
JP4415588B2 (ja) * 2003-08-28 2010-02-17 株式会社Ｓｕｍｃｏ 剥離ウェーハの再生処理方法
US6831350B1 (en) * 2003-10-02 2004-12-14 Freescale Semiconductor, Inc. Semiconductor structure with different lattice constant materials and method for forming the same
FR2860842B1 (fr) * 2003-10-14 2007-11-02 Tracit Technologies Procede de preparation et d'assemblage de substrats
DE10355728B4 (de) * 2003-11-28 2006-04-13 X-Fab Semiconductor Foundries Ag Verbinden von Halbleiterscheiben gleichen Durchmessers zum Erhalt einer gebondeten Scheibenanordnung
JP4714423B2 (ja) * 2004-01-06 2011-06-29 Ｏｋｉセミコンダクタ株式会社 半導体ウエハとその製造方法
KR100938866B1 (ko) * 2004-02-25 2010-01-27 에스.오.아이. 테크 실리콘 온 인슐레이터 테크놀로지스 광검출장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119156689A (zh) * 2022-05-18 2024-12-17 原子能与替代能源委员会 用于将层从源基体转移到目标基体的方法

Also Published As

Publication number Publication date
JP4943426B2 (ja) 2012-05-30
FR2888400A1 (fr) 2007-01-12
TWI311776B (en) 2009-07-01
CN101213651A (zh) 2008-07-02
JP2009500839A (ja) 2009-01-08
US20070023867A1 (en) 2007-02-01
FR2888400B1 (fr) 2007-10-19
US7572714B2 (en) 2009-08-11
TW200721263A (en) 2007-06-01

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