ATE556432T1 - Verfahren zur herstellung eines dünnfilms durch implantation von gasförmigen teilchen - Google Patents

Verfahren zur herstellung eines dünnfilms durch implantation von gasförmigen teilchen

Info

Publication number
ATE556432T1
ATE556432T1 AT01999973T AT01999973T ATE556432T1 AT E556432 T1 ATE556432 T1 AT E556432T1 AT 01999973 T AT01999973 T AT 01999973T AT 01999973 T AT01999973 T AT 01999973T AT E556432 T1 ATE556432 T1 AT E556432T1
Authority
AT
Austria
Prior art keywords
producing
thin film
gaseous particles
thin layer
implanting gaseous
Prior art date
Application number
AT01999973T
Other languages
English (en)
Inventor
Bernard Aspar
Michel Bruel
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE556432T1 publication Critical patent/ATE556432T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture, Treatment Of Glass Fibers (AREA)
AT01999973T 2000-12-08 2001-12-07 Verfahren zur herstellung eines dünnfilms durch implantation von gasförmigen teilchen ATE556432T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0015980A FR2818010B1 (fr) 2000-12-08 2000-12-08 Procede de realisation d'une couche mince impliquant l'introduction d'especes gazeuses
PCT/FR2001/003873 WO2002047156A1 (fr) 2000-12-08 2001-12-07 Procede de realisation d'une couche mince impliquant l'introduction d'especes gazeuses

Publications (1)

Publication Number Publication Date
ATE556432T1 true ATE556432T1 (de) 2012-05-15

Family

ID=8857408

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01999973T ATE556432T1 (de) 2000-12-08 2001-12-07 Verfahren zur herstellung eines dünnfilms durch implantation von gasförmigen teilchen

Country Status (10)

Country Link
US (1) US6946365B2 (de)
EP (1) EP1354346B1 (de)
JP (1) JP4064816B2 (de)
KR (1) KR100869327B1 (de)
AT (1) ATE556432T1 (de)
AU (1) AU2002217208A1 (de)
FR (1) FR2818010B1 (de)
MY (1) MY127171A (de)
TW (1) TW527621B (de)
WO (1) WO2002047156A1 (de)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150090A (en) * 1986-01-09 2000-11-21 Massachusetts Institute Of Technology Nuclear factors associated with transcriptional regulation
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2811807B1 (fr) * 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
FR2823596B1 (fr) 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
FR2830983B1 (fr) * 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
FR2847075B1 (fr) * 2002-11-07 2005-02-18 Commissariat Energie Atomique Procede de formation d'une zone fragile dans un substrat par co-implantation
US7176108B2 (en) 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
FR2848336B1 (fr) * 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
US7018909B2 (en) 2003-02-28 2006-03-28 S.O.I.Tec Silicon On Insulator Technologies S.A. Forming structures that include a relaxed or pseudo-relaxed layer on a substrate
FR2851848B1 (fr) * 2003-02-28 2005-07-08 Soitec Silicon On Insulator Relaxation a haute temperature d'une couche mince apres transfert
US7348260B2 (en) 2003-02-28 2008-03-25 S.O.I.Tec Silicon On Insulator Technologies Method for forming a relaxed or pseudo-relaxed useful layer on a substrate
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7772087B2 (en) * 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
FR2886051B1 (fr) 2005-05-20 2007-08-10 Commissariat Energie Atomique Procede de detachement d'un film mince
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
JP5042506B2 (ja) 2006-02-16 2012-10-03 信越化学工業株式会社 半導体基板の製造方法
FR2899378B1 (fr) 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
WO2008123117A1 (en) * 2007-03-26 2008-10-16 Semiconductor Energy Laboratory Co., Ltd. Soi substrate and method for manufacturing soi substrate
WO2008123116A1 (en) * 2007-03-26 2008-10-16 Semiconductor Energy Laboratory Co., Ltd. Soi substrate and method for manufacturing soi substrate
CN101657882B (zh) * 2007-04-13 2012-05-30 株式会社半导体能源研究所 显示器件、用于制造显示器件的方法、以及soi衬底
WO2008134828A2 (en) * 2007-05-04 2008-11-13 Katholieke Universiteit Leuven Tissue degeneration protection
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
KR101233105B1 (ko) 2008-08-27 2013-02-15 소이텍 선택되거나 제어된 격자 파라미터들을 갖는 반도체 물질층들을 이용하여 반도체 구조물들 또는 소자들을 제조하는 방법
US8367520B2 (en) * 2008-09-22 2013-02-05 Soitec Methods and structures for altering strain in III-nitride materials
FR2936904B1 (fr) 2008-10-03 2011-01-14 Soitec Silicon On Insulator Procedes et structures pour alterer la contrainte dans des materiaux nitrure iii.
EP2329517A1 (de) * 2008-09-24 2011-06-08 S.O.I.Tec Silicon on Insulator Technologies Verfahren zur bildung von relaxierten halbleitermaterialschichten, halbleiterstrukturen, vorrichtungen und manipulierte substrate damit
US8637383B2 (en) 2010-12-23 2014-01-28 Soitec Strain relaxation using metal materials and related structures
US8278193B2 (en) 2008-10-30 2012-10-02 Soitec Methods of forming layers of semiconductor material having reduced lattice strain, semiconductor structures, devices and engineered substrates including same
US8679942B2 (en) 2008-11-26 2014-03-25 Soitec Strain engineered composite semiconductor substrates and methods of forming same
US8278167B2 (en) * 2008-12-18 2012-10-02 Micron Technology, Inc. Method and structure for integrating capacitor-less memory cell with logic
US20100187568A1 (en) * 2009-01-28 2010-07-29 S.O.I.Tec Silicon On Insulator Technologies, S.A. Epitaxial methods and structures for forming semiconductor materials
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
US8198172B2 (en) 2009-02-25 2012-06-12 Micron Technology, Inc. Methods of forming integrated circuits using donor and acceptor substrates
US8178396B2 (en) 2009-03-11 2012-05-15 Micron Technology, Inc. Methods for forming three-dimensional memory devices, and related structures
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
WO2011011111A1 (en) 2009-07-20 2011-01-27 S.O.I.Tec Silicon On Insulator Technologies Methods of fabricating semiconductor structures and devices using quantum dot structures and related structures
US8461566B2 (en) * 2009-11-02 2013-06-11 Micron Technology, Inc. Methods, structures and devices for increasing memory density
SG2014014146A (en) * 2009-11-18 2014-07-30 Soitec Silicon On Insulator Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods
US8513722B2 (en) * 2010-03-02 2013-08-20 Micron Technology, Inc. Floating body cell structures, devices including same, and methods for forming same
US9646869B2 (en) 2010-03-02 2017-05-09 Micron Technology, Inc. Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
US8507966B2 (en) 2010-03-02 2013-08-13 Micron Technology, Inc. Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
US8288795B2 (en) 2010-03-02 2012-10-16 Micron Technology, Inc. Thyristor based memory cells, devices and systems including the same and methods for forming the same
US9608119B2 (en) 2010-03-02 2017-03-28 Micron Technology, Inc. Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
KR101807777B1 (ko) * 2010-03-31 2017-12-11 소이텍 본딩된 반도체 구조들 및 이를 형성하는 방법
US8461017B2 (en) 2010-07-19 2013-06-11 Soitec Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region
TW201214627A (en) 2010-09-10 2012-04-01 Soitec Silicon On Insulator Methods of forming through wafer interconnects in semiconductor structures using sacrificial material and semiconductor structures formes by such methods
WO2012085219A1 (en) 2010-12-23 2012-06-28 Soitec Strain relaxation using metal materials and related structures
US9082948B2 (en) 2011-02-03 2015-07-14 Soitec Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
US9142412B2 (en) 2011-02-03 2015-09-22 Soitec Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methods
US8436363B2 (en) 2011-02-03 2013-05-07 Soitec Metallic carrier for layer transfer and methods for forming the same
US8598621B2 (en) 2011-02-11 2013-12-03 Micron Technology, Inc. Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor
US8952418B2 (en) 2011-03-01 2015-02-10 Micron Technology, Inc. Gated bipolar junction transistors
US8519431B2 (en) 2011-03-08 2013-08-27 Micron Technology, Inc. Thyristors
TWI517226B (zh) 2011-03-31 2016-01-11 索泰克公司 形成包含由一共同底材承載之兩個或以上已處理半導體構造之黏附半導體構造之方法及應用此等方法所形成之半導體構造
US20120248621A1 (en) * 2011-03-31 2012-10-04 S.O.I.Tec Silicon On Insulator Technologies Methods of forming bonded semiconductor structures, and semiconductor structures formed by such methods
US8970045B2 (en) 2011-03-31 2015-03-03 Soitec Methods for fabrication of semiconductor structures including interposers with conductive vias, and related structures and devices
US8338294B2 (en) 2011-03-31 2012-12-25 Soitec Methods of forming bonded semiconductor structures including two or more processed semiconductor structures carried by a common substrate, and semiconductor structures formed by such methods
FR2978600B1 (fr) 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur
US8772848B2 (en) 2011-07-26 2014-07-08 Micron Technology, Inc. Circuit structures, memory circuitry, and methods
US8617925B2 (en) 2011-08-09 2013-12-31 Soitec Methods of forming bonded semiconductor structures in 3D integration processes using recoverable substrates, and bonded semiconductor structures formed by such methods
US8842945B2 (en) 2011-08-09 2014-09-23 Soitec Methods of forming three dimensionally integrated semiconductor systems including photoactive devices and semiconductor-on-insulator substrates
TWI500123B (zh) 2011-08-09 2015-09-11 索泰克公司 包含內有一個或多個電性、光學及流體互連之互連層之黏附半導體構造之形成方法及應用此等方法形成之黏附半導體構造
US8728863B2 (en) 2011-08-09 2014-05-20 Soitec Methods of forming bonded semiconductor structures including interconnect layers having one or more of electrical, optical, and fluidic interconnects therein, and bonded semiconductor structures formed using such methods
US8841742B2 (en) 2011-09-27 2014-09-23 Soitec Low temperature layer transfer process using donor structure with material in recesses in transfer layer, semiconductor structures fabricated using such methods
US8673733B2 (en) 2011-09-27 2014-03-18 Soitec Methods of transferring layers of material in 3D integration processes and related structures and devices
TWI573198B (zh) 2011-09-27 2017-03-01 索泰克公司 在三度空間集積製程中轉移材料層之方法及其相關結構與元件
WO2013093590A1 (en) 2011-12-23 2013-06-27 Soitec Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
CN104115259B (zh) 2012-02-22 2017-03-22 索泰克公司 设置晶体半导体材料薄层的方法以及有关的结构和器件
US9136134B2 (en) 2012-02-22 2015-09-15 Soitec Methods of providing thin layers of crystalline semiconductor material, and related structures and devices
US8916483B2 (en) 2012-03-09 2014-12-23 Soitec Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum
WO2013132332A1 (en) 2012-03-09 2013-09-12 Soitec Methods for forming semiconductor structures including iii-v semiconductor material using substrates comprising molybdenum, and structures formed by such methods
US8980688B2 (en) 2012-06-28 2015-03-17 Soitec Semiconductor structures including fluidic microchannels for cooling and related methods
CN104508815B (zh) 2012-07-31 2018-02-13 索泰克公司 使用激光剥离过程制造半导体结构的方法和相关的半导体结构
CN104507854A (zh) 2012-07-31 2015-04-08 索泰克公司 形成基板同侧包括mems设备及集成电路的半导体结构的方法以及相关结构和设备
WO2014020389A1 (en) 2012-07-31 2014-02-06 Soitec Methods of forming semiconductor structures including a conductive interconnection, and related structures
CN104507853B (zh) 2012-07-31 2016-11-23 索泰克公司 形成半导体设备的方法
WO2014030040A1 (en) 2012-08-24 2014-02-27 Soitec Methods of forming semiconductor structures and devices including graphene, and related structures and devices
TWI588955B (zh) 2012-09-24 2017-06-21 索泰克公司 使用多重底材形成iii-v族半導體結構之方法及應用此等方法所製作之半導體元件
TWI602315B (zh) 2013-03-08 2017-10-11 索泰克公司 具有經組構成效能更佳之低帶隙主動層之感光元件及相關方法
US9343626B2 (en) 2013-03-15 2016-05-17 Soitec Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures
TWI593135B (zh) 2013-03-15 2017-07-21 索泰克公司 具有含氮化銦鎵之主動區域之半導體結構，形成此等半導體結構之方法，以及應用此等半導體結構形成之發光元件
FR3003397B1 (fr) 2013-03-15 2016-07-22 Soitec Silicon On Insulator Structures semi-conductrices dotées de régions actives comprenant de l'INGAN
US10703627B2 (en) 2013-06-27 2020-07-07 Soitec Methods of fabricating semiconductor structures including cavities filled with a sacrificial material
US9209301B1 (en) 2014-09-18 2015-12-08 Soitec Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers
US9165945B1 (en) 2014-09-18 2015-10-20 Soitec Method for fabricating semiconductor structures including transistor channels having different strain states, and related semiconductor structures
US9219150B1 (en) 2014-09-18 2015-12-22 Soitec Method for fabricating semiconductor structures including fin structures with different strain states, and related semiconductor structures
FR3121281B1 (fr) * 2021-03-23 2023-11-24 Soitec Silicon On Insulator Procede de fabrication d’une structure composite comprenant une couche mince en semi-conducteur monocristallin sur un substrat support

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341396A (en) 1967-01-05 1967-09-12 Gen Mills Inc Marbleizing process and article
DE2539104C3 (de) 1975-09-03 1986-07-10 Basf Ag, 6700 Ludwigshafen Lösungsmittelarme Einbrennlacke
JPS55126583A (en) 1979-03-19 1980-09-30 Okamura Mfg Co Ltd Imitation marble and its manufacture
US4578418A (en) 1981-10-26 1986-03-25 E. I. Du Pont De Nemours And Company Two-package urethane maintenance primer
US4609690A (en) 1983-09-29 1986-09-02 Ashland Oil, Inc. Aqueous hydroxyl-acrylic latex and water dispersible multi-isocyanate adhesive composition
US4877656A (en) 1986-11-06 1989-10-31 Academy Of Applied Science, Inc. Method of fabricating simulated stone surfaces and improved simulated stone product
DE3932171A1 (de) 1989-09-27 1991-04-04 Henkel Kgaa Universalklebespachtel
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JPH05331412A (ja) 1992-06-03 1993-12-14 Sumitomo Metal Ind Ltd 塗料組成物
DE4338265C1 (de) 1993-11-10 1994-12-08 Herberts Gmbh Verfahren zur Beschichtung im Coil Coating Verfahren unter Verwendung von Überzugsmitteln auf der Basis organischer Lösemittel
FR2715501B1 (fr) * 1994-01-26 1996-04-05 Commissariat Energie Atomique Procédé de dépôt de lames semiconductrices sur un support.
US5472649A (en) 1994-04-13 1995-12-05 Eastman Chemical Company Method for preparing powder coating compositions having improved particle properties
BE1008721A3 (nl) 1994-09-21 1996-07-02 Dsm Nv Bindmiddelsamenstelling voor poederverfformuleringen.
DE4433854B4 (de) 1994-09-22 2005-06-02 Basf Coatings Ag Schnelltrocknendes Überzugsmittel
JPH08295548A (ja) 1995-04-25 1996-11-12 Okura Ind Co Ltd 深み感の有る大理石調の成形板
FR2738671B1 (fr) * 1995-09-13 1997-10-10 Commissariat Energie Atomique Procede de fabrication de films minces a materiau semiconducteur
CN1132223C (zh) * 1995-10-06 2003-12-24 佳能株式会社 半导体衬底及其制造方法
JP3898256B2 (ja) 1996-08-28 2007-03-28 大日本印刷株式会社 化粧シート
JP3497334B2 (ja) 1996-10-31 2004-02-16 三菱樹脂株式会社 繊維強化樹脂製単位板
JP3257624B2 (ja) * 1996-11-15 2002-02-18 キヤノン株式会社 半導体部材の製造方法
CN1105759C (zh) 1996-11-22 2003-04-16 Sk化研株式会社 防污染涂料组合物
FR2758907B1 (fr) * 1997-01-27 1999-05-07 Commissariat Energie Atomique Procede d'obtention d'un film mince, notamment semiconducteur, comportant une zone protegee des ions, et impliquant une etape d'implantation ionique
JPH11186186A (ja) * 1997-12-18 1999-07-09 Denso Corp 半導体基板の製造方法
US6191007B1 (en) * 1997-04-28 2001-02-20 Denso Corporation Method for manufacturing a semiconductor substrate
JPH10308520A (ja) * 1997-05-06 1998-11-17 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜の製造方法およびその半導体薄膜を用いた太陽電池
JP3707200B2 (ja) * 1997-05-09 2005-10-19 株式会社デンソー 半導体基板の製造方法
CN1146973C (zh) 1997-05-12 2004-04-21 硅源公司 受控切分处理
JPH118842A (ja) * 1997-06-18 1999-01-12 Nippon Telegr & Teleph Corp <Ntt> 画像スクランブル装置および画像スクランブル解除装置
JP4214567B2 (ja) * 1997-08-05 2009-01-28 株式会社デンソー 圧力センサ用半導体基板の製造方法
FR2773261B1 (fr) * 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
JP2000077287A (ja) * 1998-08-26 2000-03-14 Nissin Electric Co Ltd 結晶薄膜基板の製造方法

Also Published As

Publication number Publication date
EP1354346A1 (de) 2003-10-22
JP2004515920A (ja) 2004-05-27
JP4064816B2 (ja) 2008-03-19
FR2818010B1 (fr) 2003-09-05
AU2002217208A1 (en) 2002-06-18
EP1354346B1 (de) 2012-05-02
KR100869327B1 (ko) 2008-11-18
WO2002047156A1 (fr) 2002-06-13
KR20030061833A (ko) 2003-07-22
TW527621B (en) 2003-04-11
MY127171A (en) 2006-11-30
US6946365B2 (en) 2005-09-20
US20040092087A1 (en) 2004-05-13
FR2818010A1 (fr) 2002-06-14

Similar Documents

Publication Publication Date Title
ATE556432T1 (de) Verfahren zur herstellung eines dünnfilms durch implantation von gasförmigen teilchen
ATE491225T1 (de) Verfahren zur herstellung dünner schichten, die mikrokomponenten enthalten
ATE447009T1 (de) Verfahren zur herstellung angereicherter hämatopoietischer zusammensetzungen, dadurch hergestellte zusammensetzungen sowie deren verwendungen
ATE465514T1 (de) Herstellungsverfahren für eine bruchzone in einem substrat durch koimplantation
DE50208511D1 (de) Metallische lösungs-diffusions-membran sowie verfahren zur herstellung
ATE313619T1 (de) Bioreaktor für die kultivierung von mikroorganismen sowie verfahren zur herstellung desselben
DE60333712D1 (de) Verfahren zur Herstellung eines Substrats durch den Transfer eines Geber-Wafers mit Fremdatomen, und ein entsprechender Geber-Wafer
ATE213093T1 (de) Dotierverfahren zur herstellung von homoübergängen in halbleitersubstraten
NZ600075A (en) Means and methods for influencing the stability of antibody producing cells
ATE265743T1 (de) Verfahren zur herstellung einer schichtstruktur mit einer silicid-schicht
ATE437980T1 (de) Verfahren und vorrichtung zur herstellung von substraten
ATE539446T1 (de) Herstellung von einem abnehmbaren halbleitersubstrat und einem halbleiterelement
ATE59963T1 (de) Verfahren zur herstellung eines mit t-zellleuk|mie von erwachsenen assoziierten antigens.
ATE138923T1 (de) Verfahren zur herstellung gereinigter glycolipide durch membrantrennverfahren
ATE528793T1 (de) Verfahren zur herstellung eines films
DE60016770D1 (de) Verfahren zur trennung von 1,3-propandiol oder glycerin oder eine mischung davon aus einer biologischen mischung
DE60329153D1 (de) Mikroorganismus mit einem &#34;knock-out&#34; fadR Gen und dessen Verwendung in einem Verfahren zur Herstellung von L-Threonin
ATE267873T1 (de) Verfahren zur fermentativen herstellung von o- acetyl-l-serin
DE3863222D1 (de) Verfahren zur herstellung eines lumineszenten, mit eu2+ aktivierten strontiumaluminats, durch dieses verfahren hergestelltes aluminat und dessen verwendung in niederdruckquecksilberdampflampen.
DE60223202D1 (de) Verfahren zur niederdruck-aufkohlung
ATE339570T1 (de) Fussbodenplatte mit einem kern aus holzwerkstoff
ATE305918T1 (de) Verfahren zur herstellung von organischen polyisocyanaten
DE60239339D1 (de) Verfahren zur herstellung einer passivierten oberfläche
DK1456401T3 (da) Isolering og dykrning af mikrooranismer fra naturlige omgivelser og lægemiddelopdagelse baseret derpå
DE602004003680D1 (de) Phosphor enthaltende dendrimere, verfahren zu deren herstellung und deren verwendung zur extraktion von aktiniden und lanthaniden