CA2010298A1 - Transistor en couches minces - Google Patents
Transistor en couches mincesInfo
- Publication number
- CA2010298A1 CA2010298A1 CA2010298A CA2010298A CA2010298A1 CA 2010298 A1 CA2010298 A1 CA 2010298A1 CA 2010298 A CA2010298 A CA 2010298A CA 2010298 A CA2010298 A CA 2010298A CA 2010298 A1 CA2010298 A1 CA 2010298A1
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor layer
- making
- thin film
- layer
- buffer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 4
- 230000032683 aging Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6732—Bottom-gate only TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6746—Amorphous silicon
Landscapes
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1038069A JP2839529B2 (ja) | 1989-02-17 | 1989-02-17 | 薄膜トランジスタ |
| JP38069/89 | 1989-02-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2010298A1 true CA2010298A1 (fr) | 1990-08-17 |
| CA2010298C CA2010298C (fr) | 1993-06-29 |
Family
ID=12515202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002010298A Expired - Fee Related CA2010298C (fr) | 1989-02-17 | 1990-02-16 | Transistor en couches minces |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5101242A (fr) |
| EP (1) | EP0383743B1 (fr) |
| JP (1) | JP2839529B2 (fr) |
| CA (1) | CA2010298C (fr) |
| DE (1) | DE69008386T2 (fr) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004284367A (ja) * | 1997-08-29 | 2004-10-14 | Seiko Epson Corp | プリンタ |
| JPH11147322A (ja) * | 1997-08-29 | 1999-06-02 | Seiko Epson Corp | プリンタ |
| US6180495B1 (en) * | 1998-04-03 | 2001-01-30 | Motorola, Inc. | Silicon carbide transistor and method therefor |
| KR100583421B1 (ko) * | 2004-01-29 | 2006-05-24 | 실리콘 디스플레이 (주) | 유기 발광 다이오드에 사용하는 화소 회로 및 그를이용하는 표시장치 |
| US7655127B2 (en) * | 2006-11-27 | 2010-02-02 | 3M Innovative Properties Company | Method of fabricating thin film transistor |
| US20100158875A1 (en) * | 2006-12-18 | 2010-06-24 | University Of Pittsburgh - Of The Commonwealth System Of Higher Education | Muscle derived cells for the treatment of gastro-esophageal pathologies and methods of making and using the same |
| JP5311957B2 (ja) * | 2007-10-23 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
| JP5311955B2 (ja) * | 2007-11-01 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| TWI481029B (zh) | 2007-12-03 | 2015-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US7812348B2 (en) * | 2008-02-29 | 2010-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film transistor and display device |
| US7786485B2 (en) * | 2008-02-29 | 2010-08-31 | Semicondutor Energy Laboratory Co., Ltd. | Thin-film transistor and display device |
| US7968880B2 (en) | 2008-03-01 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and display device |
| US7821012B2 (en) | 2008-03-18 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| JP5411528B2 (ja) | 2008-03-18 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ及び表示装置 |
| WO2009128522A1 (fr) * | 2008-04-18 | 2009-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Transistor a couches minces et procede de fabrication associe |
| JP5416460B2 (ja) * | 2008-04-18 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタおよび薄膜トランジスタの作製方法 |
| CN102007585B (zh) * | 2008-04-18 | 2013-05-29 | 株式会社半导体能源研究所 | 薄膜晶体管及其制造方法 |
| US8053294B2 (en) | 2008-04-21 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film |
| JP5436017B2 (ja) * | 2008-04-25 | 2014-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US7998801B2 (en) | 2008-04-25 | 2011-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor having altered semiconductor layer |
| US8049215B2 (en) * | 2008-04-25 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US8039842B2 (en) * | 2008-05-22 | 2011-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and display device including thin film transistor |
| WO2009157573A1 (fr) * | 2008-06-27 | 2009-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Transistor à couche mince, dispositif semi-conducteur et dispositif électronique |
| KR101703511B1 (ko) * | 2008-06-27 | 2017-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 |
| US9000441B2 (en) * | 2008-08-05 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| US8283667B2 (en) | 2008-09-05 | 2012-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| JP5498762B2 (ja) * | 2008-11-17 | 2014-05-21 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
| US8436350B2 (en) * | 2009-01-30 | 2013-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device using an oxide semiconductor with a plurality of metal clusters |
| CN103730515B (zh) | 2009-03-09 | 2016-08-17 | 株式会社半导体能源研究所 | 半导体器件 |
| US9018109B2 (en) * | 2009-03-10 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor including silicon nitride layer and manufacturing method thereof |
| JP5888802B2 (ja) | 2009-05-28 | 2016-03-22 | 株式会社半導体エネルギー研究所 | トランジスタを有する装置 |
| TWI535028B (zh) * | 2009-12-21 | 2016-05-21 | 半導體能源研究所股份有限公司 | 薄膜電晶體 |
| KR101836067B1 (ko) * | 2009-12-21 | 2018-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터와 그 제작 방법 |
| US8299467B2 (en) * | 2009-12-28 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and fabrication method thereof |
| US8476744B2 (en) | 2009-12-28 | 2013-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with channel including microcrystalline and amorphous semiconductor regions |
| US8704230B2 (en) | 2010-08-26 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9230826B2 (en) | 2010-08-26 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Etching method using mixed gas and method for manufacturing semiconductor device |
| TWI538218B (zh) | 2010-09-14 | 2016-06-11 | 半導體能源研究所股份有限公司 | 薄膜電晶體 |
| US8338240B2 (en) | 2010-10-01 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing transistor |
| JP2013125782A (ja) * | 2011-12-13 | 2013-06-24 | Hitachi Ltd | 酸化物半導体装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5914675A (ja) * | 1982-07-16 | 1984-01-25 | Nec Corp | 薄膜トランジスタ− |
| JPS6066864A (ja) * | 1983-09-22 | 1985-04-17 | Seiko Instr & Electronics Ltd | Ｍｉｓ型薄膜トランジスタ |
| EP0166261A3 (fr) * | 1984-06-27 | 1989-01-11 | Energy Conversion Devices, Inc. | Dispositifs semi-conducteurs à induction par champ statique |
| JPS6132471A (ja) * | 1984-07-25 | 1986-02-15 | Hitachi Ltd | 薄膜トランジスタ |
| JPS6187371A (ja) * | 1984-10-05 | 1986-05-02 | Hitachi Ltd | 薄膜半導体装置 |
| JPS6189672A (ja) * | 1984-10-09 | 1986-05-07 | Agency Of Ind Science & Technol | 薄膜トランジスタ |
| JPS61220369A (ja) * | 1985-03-26 | 1986-09-30 | Agency Of Ind Science & Technol | 薄膜電界効果素子 |
| JPS62282464A (ja) * | 1986-05-30 | 1987-12-08 | Seiko Instr & Electronics Ltd | 埋込みチヤンネル型薄膜トランジスタ |
| JPS631072A (ja) * | 1986-06-20 | 1988-01-06 | Toshiba Corp | 薄膜電界効果トランジスタ |
| JPS63258072A (ja) * | 1987-04-15 | 1988-10-25 | Nec Corp | 電界効果トランジスタ |
-
1989
- 1989-02-17 JP JP1038069A patent/JP2839529B2/ja not_active Expired - Fee Related
-
1990
- 1990-02-13 DE DE69008386T patent/DE69008386T2/de not_active Expired - Fee Related
- 1990-02-13 EP EP90850065A patent/EP0383743B1/fr not_active Expired - Lifetime
- 1990-02-16 CA CA002010298A patent/CA2010298C/fr not_active Expired - Fee Related
- 1990-02-20 US US07/481,255 patent/US5101242A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CA2010298C (fr) | 1993-06-29 |
| EP0383743A2 (fr) | 1990-08-22 |
| JPH02218166A (ja) | 1990-08-30 |
| DE69008386T2 (de) | 1994-11-24 |
| EP0383743B1 (fr) | 1994-04-27 |
| DE69008386D1 (de) | 1994-06-01 |
| EP0383743A3 (en) | 1990-11-22 |
| JP2839529B2 (ja) | 1998-12-16 |
| US5101242A (en) | 1992-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA2010298A1 (fr) | Transistor en couches minces | |
| AU5545894A (en) | Power mosfet in silicon carbide | |
| TW344141B (en) | An insulated gate field effect transistor having a crystalline channel region | |
| MY118479A (en) | Analogue misfet with threshold voltage adjuster | |
| EP0810652A3 (fr) | Dispositif semi-conducteur et procédé de fabrication | |
| JPS5413779A (en) | Semiconductor integrated circuit device | |
| CA2054498A1 (fr) | Transistor mis | |
| GB2346481A (en) | Field effect transistor | |
| EP0893830A4 (fr) | ||
| EP0715346A3 (fr) | Méthode de formation d'un MESFET avec une électrode de grille en forme de T, et dispositif ainsi formé | |
| JPS5691473A (en) | Semiconductor | |
| TW466770B (en) | Semiconductor device and its manufacturing method | |
| JPS5226177A (en) | Semi-conductor unit | |
| JPS52117586A (en) | Semiconductor device | |
| CA2156727A1 (fr) | Transistor a effet de champ a seuil de fermi a courant de saturation eleve et a faible courant de fuite | |
| HK1007632A1 (en) | Low output-capacity, double -diffused field effect transistor | |
| JPS56110264A (en) | High withstand voltage mos transistor | |
| TW371355B (en) | High voltage metal insulator semiconductor field effect transistor and semiconductor integrated circuit device | |
| JPS5331979A (en) | Insulated gate type field effect semiconductor device | |
| JPS57164573A (en) | Semiconductor device | |
| JPS6412581A (en) | Semiconductor device structure | |
| TW349248B (en) | Multiple pocket implant for improved performance and channel length control of MOSFET properties | |
| TW224536B (en) | High speed field effect transistor | |
| EP0197501A3 (fr) | Concept de drain étendu pour réduire l'effet d'électron chaud | |
| JPS6489367A (en) | High breakdown strength semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |