EP1842209B1 - Röntgen- oder neutronen-monochromatisierer - Google Patents

Röntgen- oder neutronen-monochromatisierer Download PDF

Info

Publication number
EP1842209B1
EP1842209B1 EP06709137A EP06709137A EP1842209B1 EP 1842209 B1 EP1842209 B1 EP 1842209B1 EP 06709137 A EP06709137 A EP 06709137A EP 06709137 A EP06709137 A EP 06709137A EP 1842209 B1 EP1842209 B1 EP 1842209B1
Authority
EP
European Patent Office
Prior art keywords
optical layer
monochromator
monochromator device
substrate
monocrystalline material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP06709137A
Other languages
English (en)
French (fr)
Other versions
EP1842209A1 (de
Inventor
François RIEUTORD
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP1842209A1 publication Critical patent/EP1842209A1/de
Application granted granted Critical
Publication of EP1842209B1 publication Critical patent/EP1842209B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/062—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements the element being a crystal
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

Definitions

  • the invention relates to a monochromator device for selecting a wavelength band from incident radiation in a given wavelength range.
  • a source of X-rays or neutrons is necessary and, generally, a monochromator device is used, the purpose of which is to select a band of wavelengths (that is to say in energy) more or less narrow from the source spectrum whose wavelength range is too wide for the intended application.
  • the selection of a wavelength band is performed using the phenomenon of X-ray diffraction by a perfect crystal.
  • an incident X-ray whose spectrum extends over a given wavelength range and which is received by a perfect crystal with a given angle of incidence gives rise to a diffraction of the radiation in a length band. narrower wave.
  • the width of the wavelength band diffracted by the crystal depends on the nature of the crystal used (mesh parameter, crystal symmetry) and the selected crystallographic line.
  • the bandwidth of silicon is too small compared to the spectral width of the sources used and it follows a considerable loss of flow.
  • the bandwidth of silicon 111 is 1.3 10 -4 , which means that both third of the intensity of the incident radiation are lost. Silicon indeed has a resolution too high for applications using the X-ray diffraction technique.
  • Germanium which is a material available in the form of perfect large crystals, which, because of a higher electron density than that of silicon, and therefore of line widths, is used as the perfect crystal. larger, transmits a flux three times higher than that transmitted by a silicon crystal.
  • Germanium As crystal, applications where the curvature of the crystal must be variable and change depending on the application. Such applications are encountered when it is desired, for example, to focus X-rays at varying distances in order to adapt the optics to the apparatus or to focus different energies at a fixed distance.
  • the objective of the focusing is to reduce the size of the beam produced at the level of the sample to be analyzed.
  • the monocrystalline nature of the material of the optical layer ensures, due to the arrangement of the crystal, the diffraction of the incident radiation.
  • the invention thus makes it possible to obtain a monochromator device whose optical properties, with respect to X-rays or neutron beams, are decoupled from the mechanical and / or thermal properties of the substrate.
  • the optical layer must be sufficiently thin. However, it must contain enough crystalline planes to diffract. For this reason, its thickness is, for example, greater than the extinction length of the material, which is a function of the crystallographic line of the chosen material.
  • the monochromator device according to the invention is well adapted optically to the incident radiation thanks to the diffracting optical layer (s) of monocrystalline material (s). Thanks to the mechanical substrate, the device is easily handled and can be used in applications where it is deformed and, for example, curved, the mechanical substrate can be used to impose a flexion on the diffracting layer.
  • the optical layer of the monochromator device which is made of a material that is generally more expensive than the material constituent of the mechanical substrate is only part of this device, which contributes to reducing the cost of the latter compared to a monochromator device which consists of a single monocrystalline material such as, for example, Germanium.
  • the mechanical substrate is made of a material having mechanical characteristics greater than those of the constituent material of said at least one optical layer.
  • said at least one constituent material of the mechanical substrate has a higher bending strength than the monocrystalline material constituting said at least one optical layer.
  • said at least one optical layer has a thickness of between 0.2 and 100 ⁇ m.
  • the monocrystalline material constituting said at least one optical layer is Germanium.
  • the monocrystalline material constituting said at least one optical layer is chosen in particular from the following materials: AsGa, InSb, GaN, InP.
  • the monocrystalline material constituting said at least one optical layer is chosen in particular from the following materials: silicon carbide, diamond, sapphire, lithium fluoride, quartz, BGO (Bismuth Germanate), YAG (Yttrium garnet) aluminum), GGG (Gallium Garnetium Gadolinium), GSGG (Scandium Garnet Gallium Gadolinium), Zirconium Oxide, Strontium Titanate.
  • the device comprises at least two optical layers bonded one above the other and making it possible to select bands of different wavelengths, the monocrystalline material of one of the optical layers having a crystalline orientation different from the monocrystalline material of the other optical layer.
  • These two layers may consist of the same crystalline material: in this case, these layers will have different crystallographic orientations which will be a function of the wavelength bands to be selected.
  • the second optical layer may be the mechanical substrate which is, in this case, monocrystalline material.
  • a complementary optical device may also be associated with the monochromator to enable one of the two selected wavelength bands to be selected.
  • said at least one constituent material of the mechanical substrate is silicon.
  • the mechanical substrate has a general shape of comb and has, on the rear face, a series of grooves which are substantially parallel to each other and perpendicular to said at least one optical layer bonded to the front face of said substrate.
  • the radiation diffracted by the optical layer is reflected by this optical layer.
  • the diffracted radiation can be transmitted by the monochromator: in this case, it is ensured that the mechanical substrate is capable of enabling this transmission, either by its transparency at the selected wavelength band, or by the performing opening (s) in said substrate.
  • the invention also relates to a method for manufacturing a monochromator device for selecting at least one wavelength band from incident radiation in a given wavelength range, characterized in that it comprises a step of assembly by molecular bonding of a mechanical substrate with at least one optical layer of a monocrystalline material having a crystallographic line adapted to said at least one wavelength band to be selected.
  • the mechanical substrate is made of at least one material having mechanical characteristics superior to those of the constituent material of said at least one optical layer.
  • the method comprises a thermal treatment step in order to consolidate the molecular bonding forces between the two respective surfaces bonded to each other of the optical layer and the substrate.
  • the temperature of this heat treatment must in particular be a function of the difference between the thermal expansion coefficients of the two materials (that of the optical layer and that of the mechanical substrate) in order to guarantee the integrity of the monochromator during this step.
  • the method comprises a step of thinning said at least one optical layer.
  • an optical system comprises an X-ray source 12 which is, for example, an X-ray tube based on the copper emission line and whose width of a fluorescence line ⁇ E / E is of the order of 3.10 -4 .
  • This source can also be a synchrotron source that emits X-rays in a continuous energy spectrum which is, for example, between 5 and 50 KeV.
  • the system 10 also comprises a monochromator device 14 which is capable of selecting at least one wavelength band, as a function of the crystallographic line, of the material constituting the optical layer and of the angle of incidence of the incident radiation.
  • the device 14 thus reflects a diffracted beam 18 in a wavelength band of width ⁇ E / E, for example equal to 10 -4 in the direction of an object 20 to be analyzed (sample).
  • the device 14 can transmit the diffracted beam.
  • the selected band may be more or less narrow in the spectral width of the source.
  • the curvature of the monochromator device 14 makes it possible, according to the conventional laws of optics, to focus the incident X radiation 16 emitted by the source 12 on the sample 20.
  • the angle of incidence is changed to select a different wavelength band, it may be useful to change the curvature of the monochromator to allow the radiation to be focused at the same distance as the wavelength band. previous.
  • the monochromator device 14 is, for example, schematically represented on the figure 2 in non-curved position.
  • This device comprises an optical layer 30 made of a monocrystalline material capable of diffracting X-radiation and this material is chosen such that its mesh parameter, its crystal symmetry and its crystallographic line are adapted to the wavelength band of the X radiation to select.
  • This optical layer is, for example, made of monocrystalline Germanium and, more particularly, of Germanium 111.
  • constituent crystalline material of the optical layer can be replaced by one of the following materials: AsGa, InSb, InP, GaN to obtain specific wavelength bands.
  • the monocrystalline material used as optical layer may be of lower electron density than that of Germanium and it is possible, for example, to use instead the carbide of Silicon, Diamond, Sapphire, Lithium Fluoride, Quartz, BGO, YAG, GGG, GSGG, Zirconium Oxide, Strontium Titanate.
  • the optical layer has a thickness generally of between 0.2 and 100 ⁇ m and, for example, equal to 10 ⁇ m.
  • the thickness of monocrystalline material that is necessary for X-ray diffraction is small (of the order of a few crystalline planes), which explains the small thickness of the optical layer which can thus be described as a thin layer. This is advantageous in that the The cost of the monocrystalline material used to constitute the optical layer is reduced.
  • the monochromator device 14 of the figure 2 also comprises a mechanical substrate 32 which is assembled to the optical layer 30 by molecular bonding at the interface 34 between the two components of the assembly.
  • the mechanical substrate 32 is advantageously made of at least one material which has mechanical characteristics superior to those of the monocrystalline material constituting the optical layer 30 and which is directly compatible, or via an intermediate layer, with a molecular bonding.
  • the constituent material (s) of the mechanical substrate (s) it is desirable for the constituent material (s) of the mechanical substrate (s) to exhibit greater bending resistance than that of the material constituting the optical layer 30, so that the structure obtained ( figure 2 ) can be flexed repeatedly without damaging the monochromator device.
  • Silicon the cost of which is much lower than that of the diffractive material used for the optical layer 30, will be used, for example, as a material for constituting the substrate 32.
  • the greater part of the structure of the monochromator device 14 is made of an inexpensive material, if although the manufacture of the whole structure has a lower cost than that of a structure consisting solely of a material such as Germanium.
  • the monochromator device 14 can be curved for applications such as those shown on the drawing. figure 1 and, in particular, undergo bending cycles and return to the plane in ranges of radii of curvature ranging from 1 m to infinity, without fatigue or degradation of properties, the substrate 32 has, for example, a generally adapted form of comb.
  • Such a structure is therefore particularly adapted to adopt a variable curvature because of the great flexibility imparted by the grooves in a direction perpendicular to the latter.
  • the structure has a high rigidity in a direction parallel to the grooves, which perfectly defines the angle of incidence of the incident beam and therefore the selected wavelength band.
  • the mechanical substrate has a thickness, for example, of the order of a centimeter to allow easy manipulation of the optical layer and the monochromator in general.
  • the thickness can however be close to several centimeters depending on the intended applications.
  • the monochromator device according to the invention can also find interesting applications when it is necessary to obtain, with an optical system, several bands of wavelengths from the same incident beam of X-rays.
  • an optical system when illuminated comprising a monochromator device comprising at least two adapted optical layers (one of the optical layers can be the substrate if it is suitable and, in particular, if it is made of monocrystalline material) using "white" synchrotron radiation (such radiation has, for example, all energies ranging from 5 to 50 KeV), the two optical layers each will reflect a different wavelength band.
  • An optical device can then be attached to the monochromator if it is desired to be able to select at will one or other of the accessible bands.
  • the structure of the monochromator device 16 used in this application can be achieved by assembling, for example, an optical layer of Germanium on a mechanical silicon substrate, these two materials having different crystalline orientations and respective crystalline parameters of 5, 43 ⁇ and 5.65 ⁇ .
  • the structure with two superposed optical layers makes it possible to adapt the monochromator device to the desired resolution insofar as the lines of the monocrystalline material whose index is high give narrower reflections than those of the lines of the material whose index is higher. low.
  • FIG. figure 2 An embodiment of the manufacturing method of the monochromator device shown in FIG. figure 2 .
  • the manufacturing method provides for the use of a mechanical substrate, for example made of silicon, of parallelepipedal shape, for example, having a length of 120 mm, a height of 12 mm, for example. and a width of 80 mm (the width corresponds to the dimension perpendicular to the plane of the figure 2 ).
  • the substrate has on the rear face a plurality of grooves, for example spaced at a pitch of 1.5 mm, having a width of 1 mm and a depth of 11.3 mm.
  • Such an arrangement gives the substrate particularly advantageous bending properties, in particular, sufficient rigidity in the direction of the grooves and great flexibility in the direction perpendicular to the latter.
  • the optical layer 30 of X-ray diffractive monocrystalline material can be made from a monocrystalline Germanium substrate.
  • An oxide layer of a thickness of 500 ⁇ is for example deposited on the face of the Germanium substrate which is intended to be secured to the front face of the mechanical substrate 32, in order to facilitate the subsequent molecular bonding.
  • This oxide layer is, for example, formed by a chemical deposit PECVD type ("Plasma Enhanced Chemical Vapor Deposition" in English terminology), that is to say a plasma-assisted vapor deposition.
  • PECVD Chemical Enhanced Chemical Vapor Deposition
  • the front face of the mechanical substrate may also, if desired, coat an oxide layer.
  • the faces of the silicon and germanium substrates intended to be secured to one another at the interface 34 of the figure 2 are then prepared by known chemical treatments (wet or dry) in order to obtain a surface state compatible with a direct molecular adhesion between the faces of these two substrates, in particular in terms of surface roughness and hydrophilicity or hydrophobicity .
  • the treatments applied to the substrates may be of the chemical-mechanical type.
  • Substrates to be assembled are then contacted for molecular bonding.
  • the manufacturing process comprises a heat treatment step that consolidates the bonding forces between the two faces in contact with the two respective substrates.
  • This heat treatment consists, for example, in heating the two substrates at a temperature of between 150 and 250 ° C., which temperature is adapted to the difference between the coefficients of thermal expansion of silicon and germanium.
  • the manufacturing method also provides for a subsequent step of thinning the substrate in Germanium to obtain a thin optical layer of a thickness for example equal to 10 microns.
  • the thinning step can be performed mechanically, for example, by rectification, or chemically, using wet or dry etching techniques, or even mechanochemically.
  • the monochromator device can be used in X-ray fluorescence.
  • the device can also be used in a Seeman-Bohlin type room in reflection.
  • the monochromator device 14 which has just been described may also be used with a neutron beam.
  • the neutron beams are generally obtained by a nuclear reactor and generally have an energy of between 1 and 500 meV.

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Luminescent Compositions (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Claims (14)

  1. Monochromator-Vorrichtung (14) zum Auswählen zumindest eines Wellenlängenbandes ausgehend von einer einfallenden Strahlung in einem gegebenen Wellenlängenbereich, enthaltend:
    - zumindest eine optische Schicht (30) aus einem monokristallinen Material, dessen kristallographische Linie an das zumindest eine auszuwählende Wellenlängenband angepasst ist,
    - ein mechanisches Substrat (32),
    wobei die zumindest eine optische Schicht und das mechanische Substrat durch molekulare Bindung zusammengefügt sind,
    dadurch gekennzeichnet, dass
    die Monochromator-Vorrichtung dazu geeignet ist, ausgehend von einer Krümmung verbogen zu werden, die durch das mechanische Substrat hervorgerufen wird, wobei die Vorrichtung wiederholt verbogen werden kann, ohne dabei beschädigt zu werden.
  2. Monochromator-Vorrichtung nach Anspruch 1,
    dadurch gekennzeichnet, dass
    das zumindest eine das mechanische Substrat bildende Material eine mechanische Biegefestigkeit aufweist, die höher als die des monokristallinen Materials ist, welches die zumindest eine optische Schicht bildet.
  3. Monochromator-Vorrichtung nach einem der Ansprüche 1 bis 2,
    dadurch gekennzeichnet, dass
    die zumindest eine optische Schicht (30) eine Dicke zwischen 0,2 und 100 µm aufweist.
  4. Monochromator-Vorrichtung nach einem der Ansprüche 1 bis 3,
    dadurch gekennzeichnet, dass
    das die zumindest eine optische Schicht bildende monokristalline Material Germanium aufweist.
  5. Monochromator-Vorrichtung nach einem der Ansprüche 1 bis 3,
    dadurch gekennzeichnet, dass
    das die zumindest eine optische Schicht bildende monokristalline Material insbesondere aus folgenden Materialien ausgewählt ist: AsGa, InSb, GaN, InP.
  6. Monochromator-Vorrichtung nach einem der Ansprüche 1 bis 3,
    dadurch gekennzeichnet, dass
    das die zumindest eine optische Schicht bildende monokristalline Material insbesondere aus folgenden Materialien ausgewählt ist: Siliziumkarbid, Diamant, Saphir, Lithiumfluorid, Quarz, BGO, YAG, GGG, GSGG, Zirkoniumoxid, Strontiumtitanat.
  7. Monochromator-Vorrichtung nach einem der Ansprüche 1 bis 6,
    dadurch gekennzeichnet, dass
    sie zumindest zwei optische Schichten aufweist, die aufeinander geklebt sind und das Auswählen von unterschiedlichen Wellenlängenbändern gestatten, wobei das monokristalline Material einer der optischen Schichten eine kristalline Ausrichtung hat, die sich von dem monokristallinen Material der anderen optischen Schicht unterscheidet.
  8. Monochromator-Vorrichtung nach einem der Ansprüche 1 bis 7,
    dadurch gekennzeichnet, dass
    das zumindest eine Material, aus dem das mechanische Substrat gebildet ist, Silizium aufweist.
  9. Monochromator-Vorrichtung nach einem der Ansprüche 1 bis 8,
    dadurch gekennzeichnet, dass
    das mechanische Substrat (32) eine Kamm-Form hat und auf der Rückseite eine Reihe von Rillen aufweist, die im wesentlichen parallel zueinander und senkrecht zu der zumindest einen optischen Schicht (30) verlaufen, die mit der Vorderseite des Substrats verklebt ist.
  10. Monochromator-Vorrichtung nach einem der Ansprüche 1 bis 9,
    dadurch gekennzeichnet, dass
    die zumindest eine optische Schicht dazu geeignet ist, die durch die Vorrichtung abgelenkte Strahlung zu reflektieren.
  11. Monochromator-Vorrichtung nach einem der Ansprüche 1 bis 9,
    dadurch gekennzeichnet, dass
    die zumindest eine optische Schicht geeignet ist, die durch die Vorrichtung abgelenkte Strahlung zu transmittieren.
  12. Verfahren zum Herstellen einer Monochromator-Vorrichtung zum Auswählen zumindest eines Wellenlängenbandes ausgehend von einer einfallenden Strahlung in einem gegebenen Wellenlängenbereich,
    dadurch gekennzeichnet, dass
    es einen Schritt eines molekularen Verbindens eines mechanischen Substrats mit zumindest einer optischen Schicht eines monokristallinen Materials umfasst, welches Material eine kristallographische Linie besitzt, die an das zumindest eine auszuwählende Wellenlängenband angepasst ist, wobei das Verfahren einen Schritt umfasst, der darin besteht, der Monochromator-Vorrichtung ausgehend von einer mittels des Substrats hervorgerufenen Verbiegung eine Krümmung zu verleihen, wobei die Vorrichtung wiederholt verbogen werden kann, ohne dabei beschädigt zu werden.
  13. Verfahren nach Anspruch 12,
    dadurch gekennzeichnet, dass
    es einen Schritt einer Wärmebehandlung umfasst, um die molekularen Verbindungskräfte zwischen den beiden jeweiligen Flächen der optischen Schicht und des Substrats zu verstärken, die miteinander verbunden sind.
  14. Verfahren nach einem der Ansprüche 12 bis 13,
    dadurch gekennzeichnet, dass
    es einen Schritt eines Verdünnens der zumindest einen optischen Schicht umfasst.
EP06709137A 2005-01-21 2006-01-20 Röntgen- oder neutronen-monochromatisierer Expired - Lifetime EP1842209B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0500657A FR2881264B1 (fr) 2005-01-21 2005-01-21 Monochromateur a rayon x ou a neutrons
PCT/FR2006/000133 WO2006077329A1 (fr) 2005-01-21 2006-01-20 Monochromateur a rayons x ou a neutrons

Publications (2)

Publication Number Publication Date
EP1842209A1 EP1842209A1 (de) 2007-10-10
EP1842209B1 true EP1842209B1 (de) 2012-02-01

Family

ID=34953473

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06709137A Expired - Lifetime EP1842209B1 (de) 2005-01-21 2006-01-20 Röntgen- oder neutronen-monochromatisierer

Country Status (6)

Country Link
US (1) US7702072B2 (de)
EP (1) EP1842209B1 (de)
JP (1) JP5173435B2 (de)
AT (1) ATE544159T1 (de)
FR (1) FR2881264B1 (de)
WO (1) WO2006077329A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2444962B (en) 2006-12-22 2010-01-27 Univ Muenster Wilhelms Adaptive crystalline X-ray reflecting device
JP5125994B2 (ja) * 2008-11-04 2013-01-23 株式会社島津製作所 ゲルマニウム湾曲分光素子
JP5320592B2 (ja) * 2009-03-18 2013-10-23 大学共同利用機関法人 高エネルギー加速器研究機構 中性子線の単色集光装置
US9312039B2 (en) 2009-11-25 2016-04-12 The Trustees Of Columbia University In The City Of New York Confocal double crystal monochromator
US9240254B2 (en) * 2011-09-27 2016-01-19 Revera, Incorporated System and method for characterizing a film by X-ray photoelectron and low-energy X-ray fluorescence spectroscopy
KR20130087843A (ko) * 2012-01-30 2013-08-07 한국전자통신연구원 단결정 물질을 이용한 엑스선 제어 장치
CN104272424A (zh) * 2012-02-28 2015-01-07 X射线光学系统公司 具有使用多材料x 射线管阳极和单色光学装置产生的多激励能带的x射线分析器
CN115308240A (zh) * 2022-09-09 2022-11-08 中国科学院高能物理研究所 分析晶体及其制作方法及应用

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2853617A (en) * 1955-01-27 1958-09-23 California Inst Res Found Focusing crystal for x-rays and method of manufacture
US3397312A (en) * 1964-08-15 1968-08-13 Hitachi Ltd Laminated X-ray analyzing crystal wherein the respective laminations have different lattice spacings
DE2051017C3 (de) * 1970-01-15 1974-12-12 Hewlett-Packard Co., Palo Alto, Calif. (V.St.A.) Kristallbeugungsvorrichtung und Verfahren zu deren Herrstellung
US4261771A (en) * 1979-10-31 1981-04-14 Bell Telephone Laboratories, Incorporated Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
JPS58172810U (ja) * 1982-05-15 1983-11-18 株式会社トーキン 圧電変位素子
JPS62144051A (ja) * 1985-12-18 1987-06-27 Hitachi Ltd 結晶分光器
JP2696936B2 (ja) * 1988-06-17 1998-01-14 三井造船株式会社 短波長用ミラー
US5008908A (en) * 1988-12-09 1991-04-16 The United States Of America As Represented By The Secretary Of Commerce Diffraction device which detects the Bragg condition
JP3099038B2 (ja) * 1990-03-08 2000-10-16 科学技術振興事業団 Ｘ線用モノクロメータ及びその製造方法
JP2968995B2 (ja) * 1990-11-30 1999-11-02 株式会社リコー 多波長分光素子
JPH05180992A (ja) * 1991-12-27 1993-07-23 Ishikawajima Harima Heavy Ind Co Ltd 集光モノクロメータ
JPH06167605A (ja) * 1992-11-27 1994-06-14 Kobe Steel Ltd 光学素子
JP2674506B2 (ja) * 1994-05-30 1997-11-12 日本電気株式会社 Ｘ線回折装置
JPH08201589A (ja) * 1995-01-26 1996-08-09 Nikon Corp Ｘ線分光素子
JP3044683B2 (ja) * 1995-03-17 2000-05-22 科学技術振興事業団 グラファイト層の形成方法、該方法によって形成されたグラファイト層を有するｘ線光学素子及びｘ線光学素子の製造方法
US5923720A (en) * 1997-06-17 1999-07-13 Molecular Metrology, Inc. Angle dispersive x-ray spectrometer
JP2000098093A (ja) * 1998-09-22 2000-04-07 Nikon Corp 反射鏡およびその製造方法
JP3950239B2 (ja) * 1998-09-28 2007-07-25 株式会社リガク Ｘ線装置
JP2001141893A (ja) * 1999-11-18 2001-05-25 Toshiba Corp Ｘ線光学素子
AU2001257587A1 (en) * 2000-04-03 2001-10-15 University Of Alabama Research Foundation Optical assembly for increasing the intensity of a formed x-ray beam
US6829327B1 (en) * 2000-09-22 2004-12-07 X-Ray Optical Systems, Inc. Total-reflection x-ray fluorescence apparatus and method using a doubly-curved optic
FR2826378B1 (fr) * 2001-06-22 2004-10-15 Commissariat Energie Atomique Structure composite a orientation cristalline uniforme et procede de controle de l'orientation cristalline d'une telle structure
US6680996B2 (en) * 2002-02-19 2004-01-20 Jordan Valley Applied Radiation Ltd. Dual-wavelength X-ray reflectometry
WO2006022333A1 (ja) * 2004-08-27 2006-03-02 Tohoku University 曲率分布結晶レンズ、曲率分布結晶レンズを有するｘ線装置及び曲率分布結晶レンズの作製方法

Also Published As

Publication number Publication date
FR2881264B1 (fr) 2007-06-01
EP1842209A1 (de) 2007-10-10
US7702072B2 (en) 2010-04-20
WO2006077329A1 (fr) 2006-07-27
JP2008528959A (ja) 2008-07-31
US20080279332A1 (en) 2008-11-13
FR2881264A1 (fr) 2006-07-28
JP5173435B2 (ja) 2013-04-03
ATE544159T1 (de) 2012-02-15

Similar Documents

Publication Publication Date Title
EP1468428B1 (de) Optische anordnung und verfahren dazu
EP0422736B1 (de) Spiegeleinrichtung für den Bereich der UV- und Röntgenstrahlen
FR3061962A1 (fr) Lentille a metasurface focalisante et faible aberration chromatique
FR2802311A1 (fr) Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine
EP1842209B1 (de) Röntgen- oder neutronen-monochromatisierer
EP0050545B1 (de) Integrierte Fresnelsche Linse und deren Herstellungsverfahren
FR2945159A1 (fr) Reseau de diffraction metallique en reflexion a haute tenue au flux en regime femtoseconde, systeme comprenant un tel reseau et procede d'amelioration du seuil d'endommagement d'un reseau de diffraction metallique
FR3035507A1 (fr) Memristor programmable spectralement
EP4052073A1 (de) Diffraktives optisches element mit einer metaoberfläche für die tirf-mikroskopie
CN106324711A (zh) 硬X射线微聚焦用WSi2/Al0.98Si0.02多层膜Laue透镜
EP2583299A1 (de) Glasfaser-phosphorschirm mit winkelfilter
EP1397813B1 (de) Hybrides optisches element für röntgenstrahl-anwendungen und zugehöriges verfahren
EP2564398A1 (de) Optische vorrichtung zur probenanalyse mittels streuung eines röntgenstrahls und zugehörige kollimationsvorrichtung und kollimator
FR2733854A1 (fr) Dispositif de focalisation/dispersion de rayons x et procede de production de celui-ci
FR2504308A1 (fr) Instrument et procede pour focaliser des rayons x, des rayons gamma et des neutrons
FR3062516A1 (fr) Procede de mesure du desalignement entre une premiere et une seconde zones de gravure
FR2498007A1 (fr) Dispositif protecteur pour substrat de cathode en verre, son procede de fabrication et tube intensificateur d'images en comportant application
FR2545269A1 (fr) Ecran electroluminescent et son procede de fabrication
WO2020212556A1 (fr) Réseau de diffraction en réflexion résistant à un flux lumineux à impulsions ultra-courtes de forte puissance crête et son procédé de fabrication
WO2007135183A1 (fr) Ensemble optique de coques réflectives et procédé associé
TWI830170B (zh) 用於微電子的薄膜模糊件及其製造方法
EP0262055B1 (de) Messverfahren für das Fliessen eines Materials
EP2361383A1 (de) Vorrichtung und verfahren zur untersuchung eines studiengebietes mittels schallwelle
KR101144748B1 (ko) 결맞음 엑스선 발생 엑스선 타깃과 제조방법
WO2009121912A1 (fr) Disque optique a super-resolution a stabilite de lecture elevee

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20070810

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

DAX Request for extension of the european patent (deleted)
17Q First examination report despatched

Effective date: 20090128

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

Ref country code: AT

Ref legal event code: REF

Ref document number: 544159

Country of ref document: AT

Kind code of ref document: T

Effective date: 20120215

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602006027421

Country of ref document: DE

Effective date: 20120405

REG Reference to a national code

Ref country code: NL

Ref legal event code: VDEP

Effective date: 20120201

LTIE Lt: invalidation of european patent or patent extension

Effective date: 20120201

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120601

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

REG Reference to a national code

Ref country code: IE

Ref legal event code: FD4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120601

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120502

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 544159

Country of ref document: AT

Kind code of ref document: T

Effective date: 20120201

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

Ref country code: IE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20121105

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602006027421

Country of ref document: DE

Effective date: 20121105

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120512

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20130121

Year of fee payment: 8

Ref country code: DE

Payment date: 20130110

Year of fee payment: 8

BERE Be: lapsed

Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES

Effective date: 20130131

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120501

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20130131

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20130131

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20130131

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20130131

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 602006027421

Country of ref document: DE

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20140120

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20140801

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 602006027421

Country of ref document: DE

Effective date: 20140801

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20140120

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120201

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20130120

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20060120

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 11

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 12

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 13

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20190130

Year of fee payment: 14

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200131