ES2033241T5 - Transistores de efecto de campo. - Google Patents

Transistores de efecto de campo.

Info

Publication number
ES2033241T5
ES2033241T5 ES86309266T ES86309266T ES2033241T5 ES 2033241 T5 ES2033241 T5 ES 2033241T5 ES 86309266 T ES86309266 T ES 86309266T ES 86309266 T ES86309266 T ES 86309266T ES 2033241 T5 ES2033241 T5 ES 2033241T5
Authority
ES
Spain
Prior art keywords
conductivity
field effect
type
region
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES86309266T
Other languages
English (en)
Other versions
ES2033241T3 (es
Inventor
Yow-Juang Liu
Salvatore Cagnina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25190826&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES2033241(T5) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ES2033241T3 publication Critical patent/ES2033241T3/es
Publication of ES2033241T5 publication Critical patent/ES2033241T5/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0163—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)

Abstract

SE DESCRIBE UN DISPOSITIVO DE EFECTO DE CAMPO DE UN TRANSISTOR GEOMETRICO Y METODO DE FABRICACION. EL FET PUEDE SER OPERADO DESDE UN POTENCIAL DE POLARIZACION QUE FORMA UN CAMPO ELECTRICO ENTRE EL DISPOSITIVO EXCEDIENDO UNA PREDETERMINADA INTENSIDAD DE CAMPO. EL APARATO COMPRENDE UNA PORCION DE SUBSTRATO SEMICONDUCTOR DE UN PRIMER TIPO DE CONDUCTIVIDAD, QUE TIENE UNA SUPERFICIE PRINCIPAL Y UNA REGION DE UN SEGUNDO TIPO DE CONDUCTIVIDAD ADYACENTE A LA SUPERFICIE PRINCIPAL Y ADAPTADO PARA RECIBIR EL PREDETERMINADO POTENCIAL DE POLARIZACION, LA REGION INCLUYE UNA SUBREGION DE IGUAL TIPO DE CONDUCTIVIDAD Y MENOR CONDUCTIVIDAD, LA SUBREGION ESTA SITUADA ENTRE LA REGION PARA RECIBIR AL MENOS ESA PORCION DEL CAMPO ELECTRICO DIPLO INCLUYENDO Y EXCEDIENDO EL VALOR PREDETERMINADO.
ES86309266T 1985-12-04 1986-11-27 Transistores de efecto de campo. Expired - Lifetime ES2033241T5 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80516285A 1985-12-04 1985-12-04

Publications (2)

Publication Number Publication Date
ES2033241T3 ES2033241T3 (es) 1993-03-16
ES2033241T5 true ES2033241T5 (es) 1998-02-16

Family

ID=25190826

Family Applications (1)

Application Number Title Priority Date Filing Date
ES86309266T Expired - Lifetime ES2033241T5 (es) 1985-12-04 1986-11-27 Transistores de efecto de campo.

Country Status (6)

Country Link
EP (1) EP0228815B2 (es)
JP (1) JPS62134974A (es)
AT (1) ATE78364T1 (es)
DE (1) DE3686035T3 (es)
ES (1) ES2033241T5 (es)
GR (2) GR3005487T3 (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6480070A (en) * 1987-09-21 1989-03-24 Mitsubishi Electric Corp Semiconductor integrated circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563873A (en) * 1978-11-07 1980-05-14 Seiko Epson Corp Semiconductor integrated circuit
JPS5843556A (ja) * 1981-09-08 1983-03-14 Toshiba Corp 相補型半導体装置の製造方法
JPH0644572B2 (ja) * 1983-03-23 1994-06-08 株式会社東芝 半導体装置の製造方法
JPS6017965A (ja) * 1983-07-11 1985-01-29 Toshiba Corp 半導体装置の製造方法
JPS6038879A (ja) * 1983-08-12 1985-02-28 Hitachi Ltd 半導体装置の製造方法
JPH0693494B2 (ja) * 1984-03-16 1994-11-16 株式会社日立製作所 半導体集積回路装置の製造方法
JPS60234367A (ja) * 1984-05-07 1985-11-21 Hitachi Ltd Ｍｉｓ型電界効果トランジスタ
JPS60241256A (ja) * 1984-05-16 1985-11-30 Hitachi Ltd 半導体装置およびその製造方法
JPS6165470A (ja) * 1984-09-07 1986-04-04 Hitachi Ltd 半導体集積回路装置
JPS61133656A (ja) * 1984-12-03 1986-06-20 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
DE3686035T3 (de) 1998-01-22
EP0228815B1 (en) 1992-07-15
GR3025557T3 (en) 1998-03-31
DE3686035D1 (de) 1992-08-20
JPS62134974A (ja) 1987-06-18
ES2033241T3 (es) 1993-03-16
GR3005487T3 (en) 1993-05-24
EP0228815B2 (en) 1997-10-15
EP0228815A3 (en) 1988-09-07
ATE78364T1 (de) 1992-08-15
EP0228815A2 (en) 1987-07-15
DE3686035T2 (de) 1993-01-07

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