ATE78364T1 - Feldeffekttransistor. - Google Patents

Feldeffekttransistor.

Info

Publication number
ATE78364T1
ATE78364T1 AT86309266T AT86309266T ATE78364T1 AT E78364 T1 ATE78364 T1 AT E78364T1 AT 86309266 T AT86309266 T AT 86309266T AT 86309266 T AT86309266 T AT 86309266T AT E78364 T1 ATE78364 T1 AT E78364T1
Authority
AT
Austria
Prior art keywords
subregion
conductivity type
region
field effect
effect transistor
Prior art date
Application number
AT86309266T
Other languages
English (en)
Inventor
Yow-Juang Liu
Salvatore Cagnina
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25190826&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE78364(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ATE78364T1 publication Critical patent/ATE78364T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0163—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)
AT86309266T 1985-12-04 1986-11-27 Feldeffekttransistor. ATE78364T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80516285A 1985-12-04 1985-12-04
EP86309266A EP0228815B2 (de) 1985-12-04 1986-11-27 Feldeffekttransistor

Publications (1)

Publication Number Publication Date
ATE78364T1 true ATE78364T1 (de) 1992-08-15

Family

ID=25190826

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86309266T ATE78364T1 (de) 1985-12-04 1986-11-27 Feldeffekttransistor.

Country Status (6)

Country Link
EP (1) EP0228815B2 (de)
JP (1) JPS62134974A (de)
AT (1) ATE78364T1 (de)
DE (1) DE3686035T3 (de)
ES (1) ES2033241T5 (de)
GR (2) GR3005487T3 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6480070A (en) * 1987-09-21 1989-03-24 Mitsubishi Electric Corp Semiconductor integrated circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563873A (en) * 1978-11-07 1980-05-14 Seiko Epson Corp Semiconductor integrated circuit
JPS5843556A (ja) * 1981-09-08 1983-03-14 Toshiba Corp 相補型半導体装置の製造方法
JPH0644572B2 (ja) * 1983-03-23 1994-06-08 株式会社東芝 半導体装置の製造方法
JPS6017965A (ja) * 1983-07-11 1985-01-29 Toshiba Corp 半導体装置の製造方法
JPS6038879A (ja) * 1983-08-12 1985-02-28 Hitachi Ltd 半導体装置の製造方法
JPH0693494B2 (ja) * 1984-03-16 1994-11-16 株式会社日立製作所 半導体集積回路装置の製造方法
JPS60234367A (ja) * 1984-05-07 1985-11-21 Hitachi Ltd Ｍｉｓ型電界効果トランジスタ
JPS60241256A (ja) * 1984-05-16 1985-11-30 Hitachi Ltd 半導体装置およびその製造方法
JPS6165470A (ja) * 1984-09-07 1986-04-04 Hitachi Ltd 半導体集積回路装置
JPS61133656A (ja) * 1984-12-03 1986-06-20 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
DE3686035T3 (de) 1998-01-22
EP0228815A3 (en) 1988-09-07
ES2033241T3 (es) 1993-03-16
GR3005487T3 (en) 1993-05-24
DE3686035D1 (de) 1992-08-20
DE3686035T2 (de) 1993-01-07
JPS62134974A (ja) 1987-06-18
ES2033241T5 (es) 1998-02-16
GR3025557T3 (en) 1998-03-31
EP0228815B1 (de) 1992-07-15
EP0228815A2 (de) 1987-07-15
EP0228815B2 (de) 1997-10-15

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee