FR2531811B1 - Couches polymeres en polysiloxane forme par polymerisation induite par plasma pour circuits electroniques - Google Patents

Couches polymeres en polysiloxane forme par polymerisation induite par plasma pour circuits electroniques

Info

Publication number
FR2531811B1
FR2531811B1 FR8312637A FR8312637A FR2531811B1 FR 2531811 B1 FR2531811 B1 FR 2531811B1 FR 8312637 A FR8312637 A FR 8312637A FR 8312637 A FR8312637 A FR 8312637A FR 2531811 B1 FR2531811 B1 FR 2531811B1
Authority
FR
France
Prior art keywords
electronic circuits
polymer layers
induced polymerization
plasma induced
polysiloxane formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8312637A
Other languages
English (en)
French (fr)
Other versions
FR2531811A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2531811A1 publication Critical patent/FR2531811A1/fr
Application granted granted Critical
Publication of FR2531811B1 publication Critical patent/FR2531811B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
FR8312637A 1982-08-13 1983-08-01 Couches polymeres en polysiloxane forme par polymerisation induite par plasma pour circuits electroniques Expired FR2531811B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US40800582A 1982-08-13 1982-08-13

Publications (2)

Publication Number Publication Date
FR2531811A1 FR2531811A1 (fr) 1984-02-17
FR2531811B1 true FR2531811B1 (fr) 1986-10-31

Family

ID=23614453

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8312637A Expired FR2531811B1 (fr) 1982-08-13 1983-08-01 Couches polymeres en polysiloxane forme par polymerisation induite par plasma pour circuits electroniques

Country Status (8)

Country Link
JP (1) JPS5948929A (it)
BE (1) BE897503A (it)
CA (1) CA1204527A (it)
DE (1) DE3329065A1 (it)
FR (1) FR2531811B1 (it)
GB (1) GB2125423B (it)
IT (1) IT1203708B (it)
NL (1) NL8302845A (it)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225447A (ja) * 1984-04-23 1985-11-09 Mitsubishi Electric Corp 半導体装置の製造方法
EP0204631A3 (en) * 1985-06-04 1987-05-20 Fairchild Semiconductor Corporation Semiconductor structures having polysiloxane leveling film
US4723978A (en) * 1985-10-31 1988-02-09 International Business Machines Corporation Method for a plasma-treated polysiloxane coating
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4911992A (en) * 1986-12-04 1990-03-27 Dow Corning Corporation Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides
US4753855A (en) * 1986-12-04 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from metal oxides for protection of electronic devices
US4749631B1 (en) * 1986-12-04 1993-03-23 Multilayer ceramics from silicate esters
JPS63213347A (ja) * 1987-02-27 1988-09-06 Mitsubishi Electric Corp 半導体装置
US4847162A (en) * 1987-12-28 1989-07-11 Dow Corning Corporation Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia
IT1226701B (it) * 1988-07-29 1991-02-05 Eniricerche Spa Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet.
JPH02291129A (ja) * 1989-04-28 1990-11-30 Nec Corp 半導体装置
DE9206834U1 (de) * 1992-02-21 1993-06-17 Robert Bosch Gmbh, 70469 Stuttgart Anschlußteil
JP2934353B2 (ja) * 1992-06-24 1999-08-16 三菱電機株式会社 半導体装置およびその製造方法
JP3262334B2 (ja) 1992-07-04 2002-03-04 トリコン ホルディングズ リミテッド 半導体ウエハーを処理する方法
DE69433244T2 (de) * 1993-08-05 2004-07-29 Matsushita Electric Industrial Co., Ltd., Kadoma Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante
US5858880A (en) * 1994-05-14 1999-01-12 Trikon Equipment Limited Method of treating a semi-conductor wafer
WO1998008249A1 (en) 1996-08-24 1998-02-26 Trikon Equipments Limited Method and apparatus for depositing a planarized dielectric layer on a semiconductor substrate
TW437017B (en) * 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
EP1160848B1 (en) * 2000-05-22 2011-10-05 JSR Corporation Composition for silica-based film formation
US7834119B2 (en) 2002-04-18 2010-11-16 Lg Chem, Ltd. Organic silicate polymer and insulation film comprising the same
CN103030832B (zh) 2005-11-30 2015-07-08 Lg化学株式会社 用具有改善的冷却性模具制备热塑性树脂微孔泡沫的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1347948A (fr) * 1961-12-15 1964-01-04 Pacific Semiconductors Procédé d'estérification du bioxyde de silicium à la pression atmosphérique
JPS5850417B2 (ja) * 1979-07-31 1983-11-10 富士通株式会社 半導体装置の製造方法
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition

Also Published As

Publication number Publication date
GB2125423B (en) 1985-09-04
CA1204527A (en) 1986-05-13
GB2125423A (en) 1984-03-07
NL8302845A (nl) 1984-03-01
IT1203708B (it) 1989-02-15
BE897503A (fr) 1983-12-01
JPS5948929A (ja) 1984-03-21
GB8321502D0 (en) 1983-09-14
FR2531811A1 (fr) 1984-02-17
DE3329065A1 (de) 1984-02-16
IT8322560A0 (it) 1983-08-12

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Legal Events

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ST Notification of lapse