IT1203708B - Pellicole polimere per circuiti elettronici - Google Patents
Pellicole polimere per circuiti elettroniciInfo
- Publication number
- IT1203708B IT1203708B IT22560/83A IT2256083A IT1203708B IT 1203708 B IT1203708 B IT 1203708B IT 22560/83 A IT22560/83 A IT 22560/83A IT 2256083 A IT2256083 A IT 2256083A IT 1203708 B IT1203708 B IT 1203708B
- Authority
- IT
- Italy
- Prior art keywords
- electronic circuits
- polymer films
- films
- polymer
- circuits
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
- H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
- H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US40800582A | 1982-08-13 | 1982-08-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8322560A0 IT8322560A0 (it) | 1983-08-12 |
| IT1203708B true IT1203708B (it) | 1989-02-15 |
Family
ID=23614453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT22560/83A IT1203708B (it) | 1982-08-13 | 1983-08-12 | Pellicole polimere per circuiti elettronici |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5948929A (it) |
| BE (1) | BE897503A (it) |
| CA (1) | CA1204527A (it) |
| DE (1) | DE3329065A1 (it) |
| FR (1) | FR2531811B1 (it) |
| GB (1) | GB2125423B (it) |
| IT (1) | IT1203708B (it) |
| NL (1) | NL8302845A (it) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60225447A (ja) * | 1984-04-23 | 1985-11-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| EP0204631A3 (en) * | 1985-06-04 | 1987-05-20 | Fairchild Semiconductor Corporation | Semiconductor structures having polysiloxane leveling film |
| US4723978A (en) * | 1985-10-31 | 1988-02-09 | International Business Machines Corporation | Method for a plasma-treated polysiloxane coating |
| US4732841A (en) * | 1986-03-24 | 1988-03-22 | Fairchild Semiconductor Corporation | Tri-level resist process for fine resolution photolithography |
| US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
| US4749631B1 (en) * | 1986-12-04 | 1993-03-23 | Multilayer ceramics from silicate esters | |
| US4911992A (en) * | 1986-12-04 | 1990-03-27 | Dow Corning Corporation | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides |
| US4753855A (en) * | 1986-12-04 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from metal oxides for protection of electronic devices |
| JPS63213347A (ja) * | 1987-02-27 | 1988-09-06 | Mitsubishi Electric Corp | 半導体装置 |
| US4847162A (en) * | 1987-12-28 | 1989-07-11 | Dow Corning Corporation | Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia |
| IT1226701B (it) * | 1988-07-29 | 1991-02-05 | Eniricerche Spa | Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet. |
| JPH02291129A (ja) * | 1989-04-28 | 1990-11-30 | Nec Corp | 半導体装置 |
| DE9206834U1 (de) * | 1992-02-21 | 1993-06-17 | Robert Bosch Gmbh, 70469 Stuttgart | Anschlußteil |
| JP2934353B2 (ja) * | 1992-06-24 | 1999-08-16 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| EP0731982B1 (en) | 1992-07-04 | 1999-12-01 | Trikon Equipments Limited | A method of treating a semiconductor wafer |
| DE69426208T2 (de) * | 1993-08-05 | 2001-05-17 | Matsushita Electronics Corp., Takatsuki | Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren |
| US5858880A (en) * | 1994-05-14 | 1999-01-12 | Trikon Equipment Limited | Method of treating a semi-conductor wafer |
| WO1998008249A1 (en) | 1996-08-24 | 1998-02-26 | Trikon Equipments Limited | Method and apparatus for depositing a planarized dielectric layer on a semiconductor substrate |
| TW437017B (en) * | 1998-02-05 | 2001-05-28 | Asm Japan Kk | Silicone polymer insulation film on semiconductor substrate and method for formation thereof |
| TW524883B (en) * | 2000-05-22 | 2003-03-21 | Jsr Corp | Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film |
| EP1495066B1 (en) * | 2002-04-18 | 2008-07-16 | LG Chem, Ltd. | Organic silicate polymer and insulation film comprising the same |
| WO2007064065A2 (en) | 2005-11-30 | 2007-06-07 | Lg Chem, Ltd. | Microcellular foam of thermoplastic resin prepared with die having improved cooling property and method for preparing the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1347948A (fr) * | 1961-12-15 | 1964-01-04 | Pacific Semiconductors | Procédé d'estérification du bioxyde de silicium à la pression atmosphérique |
| JPS5850417B2 (ja) * | 1979-07-31 | 1983-11-10 | 富士通株式会社 | 半導体装置の製造方法 |
| JPS5760330A (en) * | 1980-09-27 | 1982-04-12 | Fujitsu Ltd | Resin composition |
-
1983
- 1983-07-14 CA CA000432475A patent/CA1204527A/en not_active Expired
- 1983-08-01 FR FR8312637A patent/FR2531811B1/fr not_active Expired
- 1983-08-10 BE BE0/211328A patent/BE897503A/fr not_active IP Right Cessation
- 1983-08-10 GB GB08321502A patent/GB2125423B/en not_active Expired
- 1983-08-11 DE DE19833329065 patent/DE3329065A1/de not_active Withdrawn
- 1983-08-11 JP JP58145809A patent/JPS5948929A/ja active Pending
- 1983-08-12 IT IT22560/83A patent/IT1203708B/it active
- 1983-08-12 NL NL8302845A patent/NL8302845A/nl not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5948929A (ja) | 1984-03-21 |
| NL8302845A (nl) | 1984-03-01 |
| BE897503A (fr) | 1983-12-01 |
| GB2125423B (en) | 1985-09-04 |
| FR2531811B1 (fr) | 1986-10-31 |
| GB8321502D0 (en) | 1983-09-14 |
| IT8322560A0 (it) | 1983-08-12 |
| CA1204527A (en) | 1986-05-13 |
| GB2125423A (en) | 1984-03-07 |
| DE3329065A1 (de) | 1984-02-16 |
| FR2531811A1 (fr) | 1984-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IT8322560A0 (it) | Pellicole polimere per circuiti elettronici. | |
| IT1161844B (it) | Apparato per il collaudo ci circuiti integrati | |
| GB2117970B (en) | Thin film transistor integrated circuit | |
| DK164183A (da) | Tykfilmlederkompositioner | |
| AR226460A1 (es) | Un alojamiento para circuitos electronicos | |
| IT7912667A0 (it) | Morsetto per circuiti stampati | |
| DK405584D0 (da) | Tykfilmleder-kompositioner | |
| FR2534045B1 (fr) | Circuit additionneur numerique | |
| IT1206328B (it) | Dispositivo di fissaggio per pannelli di circuiti stampati. | |
| ES528336A0 (es) | Metodo para encapsular circuitos electronicos | |
| IT1137369B (it) | Apparecciatura di interruzione di circuiti | |
| FR2535126B1 (fr) | Circuit de retardateur | |
| IT1195963B (it) | Procedimento di fabbricazione di circuiti stampati | |
| IT1171786B (it) | Circuito rivelatore di segnali in particolare per applicazioni telefoniche | |
| IT8168022A0 (it) | Dispositivo per schermare circuiti elettrici | |
| MX150954A (es) | Mejoras en circuito hibrido electronico para linea telefonica | |
| FI830324A0 (fi) | Elektroniskt ballastsystem foer gasurladdningsroer | |
| IT8422489A0 (it) | Dispositivo per intercollegare circuiti stampati. | |
| FI830659A0 (fi) | Kopplingsanordning | |
| GB1540112A (en) | Multi-layer electronic film circuits | |
| IT1137014B (it) | Procedimento di fabbricazione di circuiti stampati | |
| IT8321012A0 (it) | Commutatore elettrico per circuiti a film spesso/sottile. | |
| IT1163335B (it) | Dispositivo di commutazione per circuiti a film spesso/sottile | |
| IT1139888B (it) | Circuiti di protezione per dispositivi a circuito integrato | |
| FI833024A0 (fi) | Kopplingsanordning |