JPS5948929A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5948929A
JPS5948929A JP58145809A JP14580983A JPS5948929A JP S5948929 A JPS5948929 A JP S5948929A JP 58145809 A JP58145809 A JP 58145809A JP 14580983 A JP14580983 A JP 14580983A JP S5948929 A JPS5948929 A JP S5948929A
Authority
JP
Japan
Prior art keywords
circuit
polysiloxane
microns
thickness
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58145809A
Other languages
English (en)
Japanese (ja)
Inventor
セオドア・フランク・レタジエスイク・ジユニア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS5948929A publication Critical patent/JPS5948929A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP58145809A 1982-08-13 1983-08-11 半導体装置 Pending JPS5948929A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40800582A 1982-08-13 1982-08-13
US408005 1982-08-13

Publications (1)

Publication Number Publication Date
JPS5948929A true JPS5948929A (ja) 1984-03-21

Family

ID=23614453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58145809A Pending JPS5948929A (ja) 1982-08-13 1983-08-11 半導体装置

Country Status (8)

Country Link
JP (1) JPS5948929A (it)
BE (1) BE897503A (it)
CA (1) CA1204527A (it)
DE (1) DE3329065A1 (it)
FR (1) FR2531811B1 (it)
GB (1) GB2125423B (it)
IT (1) IT1203708B (it)
NL (1) NL8302845A (it)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225447A (ja) * 1984-04-23 1985-11-09 Mitsubishi Electric Corp 半導体装置の製造方法
JPS62106632A (ja) * 1985-10-31 1987-05-18 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 有機ガラス絶縁層を形成する方法
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
JPH02291129A (ja) * 1989-04-28 1990-11-30 Nec Corp 半導体装置

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0204631A3 (en) * 1985-06-04 1987-05-20 Fairchild Semiconductor Corporation Semiconductor structures having polysiloxane leveling film
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4753855A (en) * 1986-12-04 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from metal oxides for protection of electronic devices
US4749631B1 (en) * 1986-12-04 1993-03-23 Multilayer ceramics from silicate esters
US4911992A (en) * 1986-12-04 1990-03-27 Dow Corning Corporation Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides
JPS63213347A (ja) * 1987-02-27 1988-09-06 Mitsubishi Electric Corp 半導体装置
US4847162A (en) * 1987-12-28 1989-07-11 Dow Corning Corporation Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia
IT1226701B (it) * 1988-07-29 1991-02-05 Eniricerche Spa Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet.
DE9206834U1 (de) * 1992-02-21 1993-06-17 Robert Bosch Gmbh, 70469 Stuttgart Anschlußteil
JP2934353B2 (ja) * 1992-06-24 1999-08-16 三菱電機株式会社 半導体装置およびその製造方法
CA2137928C (en) 1992-07-04 2002-01-29 Christopher David Dobson A method of treating a semiconductor wafer
DE69433245T2 (de) * 1993-08-05 2004-07-22 Matsushita Electric Industrial Co., Ltd., Kadoma Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante
US5858880A (en) * 1994-05-14 1999-01-12 Trikon Equipment Limited Method of treating a semi-conductor wafer
DE19781956B4 (de) 1996-08-24 2006-06-14 Trikon Equipments Ltd., Newport Verfahren zum Aufbringen einer planarisierten dielektrischen Schicht auf einem Halbleitersubstrat
TW437017B (en) * 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
US6503633B2 (en) * 2000-05-22 2003-01-07 Jsr Corporation Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film
US7834119B2 (en) 2002-04-18 2010-11-16 Lg Chem, Ltd. Organic silicate polymer and insulation film comprising the same
CN103030832B (zh) 2005-11-30 2015-07-08 Lg化学株式会社 用具有改善的冷却性模具制备热塑性树脂微孔泡沫的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1347948A (fr) * 1961-12-15 1964-01-04 Pacific Semiconductors Procédé d'estérification du bioxyde de silicium à la pression atmosphérique
JPS5850417B2 (ja) * 1979-07-31 1983-11-10 富士通株式会社 半導体装置の製造方法
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225447A (ja) * 1984-04-23 1985-11-09 Mitsubishi Electric Corp 半導体装置の製造方法
JPS62106632A (ja) * 1985-10-31 1987-05-18 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 有機ガラス絶縁層を形成する方法
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
JPH02291129A (ja) * 1989-04-28 1990-11-30 Nec Corp 半導体装置

Also Published As

Publication number Publication date
GB8321502D0 (en) 1983-09-14
BE897503A (fr) 1983-12-01
DE3329065A1 (de) 1984-02-16
CA1204527A (en) 1986-05-13
GB2125423A (en) 1984-03-07
FR2531811A1 (fr) 1984-02-17
FR2531811B1 (fr) 1986-10-31
GB2125423B (en) 1985-09-04
IT8322560A0 (it) 1983-08-12
NL8302845A (nl) 1984-03-01
IT1203708B (it) 1989-02-15

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